| Project/Area Number |
07455007
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | NAGOYA UNIVERSITY |
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Principal Investigator |
TAKEDA Yoshikazu NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,PROFESSOR, 工学部, 教授 (20111932)
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| Co-Investigator(Kenkyū-buntansha) |
TABUCHI Masao NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,LECTURER, 工学部, 講師 (90222124)
FUJIWARA Yasufumi NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,ASSOCIATE PROF, 工学部, 助教授 (10181421)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥8,400,000 (Direct Cost: ¥8,400,000)
Fiscal Year 1996: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1995: ¥6,300,000 (Direct Cost: ¥6,300,000)
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| Keywords | SEMICONDUCTORS / ATOMIC LAYER / QUANTUM STRUCTURES / HETEROSTRUCTURE / EXAFS / X-RAY CTR / PHOTOREFLECTANCE / GROWTH CONDITIONS |
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| Research Abstract |
The turgets of this research are divided into two major objectives ; one is to grow ultrathin heterolayrs with different group-V atoms (specifically, InAs/InP and InGaAs/InP) under a variety of growth conditions, and the other is to characterize these heterolayrs and interfaces by fluorescence EXAFS and X-ray CTR scattering. The two objectives are finally combined to control the heterostructure growth to one atomic layr. In the mean time we succeeded to grow InAs quantum dots on InP (001) surface which was desired but had been unsuccessful.
Growth
(a) InGaAs/InP Heterostructures : The optimum growth conditions which give the sharpest heterointerface was revealed.
(b) ErP/InP Heterostructures : Semiconductor/semimetal heterostructures which are expected to exhibit new effects were successfully grown.
(c) InAs Quantum Dots : By droplet heteroepitaxy InAs quantum dots were successfully grown on InP (001) surface.
1 atomic layr characterization of heterointerfaces
(a) Fluorescence EXAFS : Local structures around very dilute atoms in 1 atomic layr or of 10^<18>cm^<-3> were clearly revealed.
(b) X-Ray CTR Scattering : Film thickness, composition and crystal structure were determined in the atomic scale.
Optical Characterization of Heterostructures
(a) Photoreflectance : The energy structures and electric fields in the ErP/InP heterostructures were clearly revealed by FFT Phtoreflectance.
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