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Excitonic optical transition in a new II-VI semiconductor superlattice

Research Project

Project/Area Number 07455126
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

SUEMUNE Ikuo  Hokkaido, Univ., Research Institute for Electronic Science, Prof., 電子科学研究所, 教授 (00112178)

Co-Investigator(Kenkyū-buntansha) UESUGI Katsuhiro  Hokkaido, Univ., Research Institute for Electronic Science, Res.Assoc., 電子科学研究所, 助手 (70261352)
Project Period (FY) 1995 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥7,400,000 (Direct Cost: ¥7,400,000)
Fiscal Year 1996: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 1995: ¥4,800,000 (Direct Cost: ¥4,800,000)
KeywordsII-VI semiconductor / excitons / ZnSe / MgS / strained superlattice / MOVPE / zincblende structure / x-ray diffraction / エキシトン / 束縛エネルギー
Research Abstract

II-VI semiconductors such as ZnSe are attractivenot only for the application of blue semiconductor lasers but also from physical properties such as large exciton binding energies. We have proposed ZnSe/MgSSe superiattices and have been working on the exciton related optical transitions in this superlattice.
First of all we have demonstrated that the zincblende ZnSe/MgS superlattice can be grown by metalorganic vapor phase epitaxy. The crystalline properties of the the superlattice was critically dependent on the initial growth on GaAs, and therefore the surface cleaning conditions such as metalorganic As flow were examined.With these studies, we could improve the atomic abruptness of the heterointerface and monolayr photoluminescence peaks were well resolved in the ZnSe/MgS superlattice grown with the optimized condition.
Based on these growth study, the superlattice crystalline structure was examined with high-resolution X-ray diffraction measurements. Clear superlattice satellite peaks were observed. From the shift of the 0-th peak, we found the formation of the MgSe interface layr. This was improved with growth interruption at the heterointerfaces.
Excitonic peaks were clearly observed in the reflection spectra up to room temperature, which indicate the enhancement of quantum confinement on excitons. Photoluminescence from this superlattice was also shown to be excitonic up to room temperature.

Report

(3 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • Research Products

    (26 results)

All Other

All Publications (26 results)

  • [Publications] K. Uesugi: "Epitaxial Growth of Znicblende ZnSe/MgS Superlattices on (OO1) GaAs" Appl. Phys. Lett.Vol.68, No.6. 844-846 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K. Uesugi: "Initial Growth Processes of ZnSe on Cleaned GaAs (001) Surfaces by Metal Organic Vapor Phase Epitaxy" Japan. J. Appl. Phys.Vol.35, No.8A. L1006-K1008 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H. Suzuki: "Purge Effect on Hetero Interfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy" Jpn. J. Appl. Phys.Vol.35, No.12B. L1658-K1661 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I. Suemune: "Growth of Zincblende MgS/ZnSe Superlattices and Their Hetero Inteface Properties" J. Cryst. Growth. Vol.170. 480-484 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H. Kumano: "Excitonic Properties of Zincblende ZnSe/MgS Superlattices by Reflectance Spectroscopy" Phys. Rev. B.(印刷中). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H. Nashiki: "Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy" Jpn. J. Appl. Phys.(印刷中). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I. Suemune: ""Properties of III-V Quantum Wells and Superlattices"" Edited by P. Battacharya, IEE EMIS, 400 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Uesugi: "Epitaxial Growth of Znicblende ZnSe/MgS Superlattices on (001) GaAs" Appl.Phys.Lett. Vol.68, No.6. 844-846 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Uesugi: "Initial Growth Processes of ZnSe onCleaned GaAs (001) Surfaces by Metal Organic Vapor Phase Epitaxy" Japan.J.Appl.Phys.Vol.35, No.8A. L1006-L1008 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Suzuki: "Purge Effect on Hetero Interfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy" Jpn.J.Appl.Phys.Vol.35, No.12B. L1658-L1661 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Suemune: "Growth of Zincblende MgS/ZnSe Superlattices and Their Hetero Interface Properties" J.Cryst.Growth. Vol.170. 480-484 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Kumano: ""Excitonic Properties of Zincblende ZnSe/MgS Superlattices by Reflectance Spectroscopy" (to be published)" Phys.Rev.B. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Nashiki: ""Luminescence of Excitons Localized by Monolayr Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy" (to be published)" Jpn.J.Appl.Phys.(1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] I.Suemune: "Properties of III-V Quantum Wells and Superlattices" IEE EMIS. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K. Uesugi: ""Epitaxial Growth of Znicblends ZnSe/MgS Superlattices on (OOI) GaAs"" Appl. Phys. Lett.Vol. 68, No.6. 844-846 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K. Uesugi: ""Initial Growth Processes of ZnSe on Cleaned GaAs (OOI) Surfaces by Metal Organic Vapor Phase Epitaxy"" Japan. J. Appl. Phys.Vol. 35, No. 8A. L1006-L1008 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Suzuki: ""Purge Effect on Hetero Interfaces of ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy"" Jpn. J. Appl. Phys.Vol. 35, No 12B. L1658-L1661 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] I. Suemune: ""Growth of Zincblends MgS/ZnSe Superlattices and Their Hetero Interface Properties"" J. Cryst. Growth. Vol. 170. 480-484 (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Kumano: ""Excitonic Properties of Zincblends ZnSe/MgS Superlattices by Reflectnce Spectroscopy" (印刷中)" Phys. Rev. B.(1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Nashiki: ""Luminescence of Excitons Localized by Monolayer Interface Fluctuations in ZnSe/MgS Superlattices Grown by Metalorganic Vapor Phase Epitaxy" (印刷中)" Jpn. J. Appl. Phys.(1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] I. Suemune (分担執筆): ""Properties of III-V Quantum Wells and Superlattices"" Edited by P. Battacharya, IEE EMIS, 400 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Shogen: "XPS and AFM Analysis of GaAs (100) Cleaning Procedures" J.Vac.Sci.Technol.B. 13. 77-82 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] G.Sato: "MOMBE Growth of ZnSe with New Zn and Se Precursors Without Precracking" J.Cryst.Growth. 150. 734-737 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Obinata: "Temperature Dependence of ZnS Growth with Atmospheric Pressure Metalorganic Vapor Phase Epitaxy Using Ditertiarybutyl Sulfide" Jpn.J.Appl.Phys.34. 4143-4147 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M.Dabbico: "Exciton-phonon Coupling in ZnSe/ZnSSe Multiple Quantum-well Structures" Advances in Science and Technology. 11. 331-338 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] K.Uesugi: "Epitaxial Growth of Znicblende ZnSe/MgS Superlattices on (001) GaAs" Appl.Phys.Lett.(印刷中).

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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