| Project/Area Number |
07455134
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Single-year Grants |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | TOKYO INSTITUTE OF TECHNOLOGY |
|---|
Principal Investigator |
TOKUMITSU Eisuke TOKYO INSTITUTE OF TECHNOLOGY,PRECISION AND INTELLIGENCE LABORATORY,ASSOCIATE PROFESSOR, 精密工学研究所, 助教授 (10197882)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
AIZAWA Koji TOKYO INSTITUTE OF TECHNOLOGY,PRECISION AND INTELLIGENCE LABORATORY,RESEACH ASSO, 精密工学研究所, 助手 (40222450)
ISHIWARA Hiroshi TOKYO INSTITUTE OF TECHNOLOGY,PRECISION AND INTELLIGENCE LABORATORY,PROFESSOR, 精密工学研究所, 教授 (60016657)
|
|---|
| Project Period (FY) |
1995 – 1996
|
| Project Status |
Completed (Fiscal Year 1996)
|
| Budget Amount *help |
¥5,400,000 (Direct Cost: ¥5,400,000)
Fiscal Year 1996: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 1995: ¥3,000,000 (Direct Cost: ¥3,000,000)
|
|---|
| Keywords | ferroelectric thin film / GaAs / BaMgF_4 / high electron mobility transistor (HEMT) / two dimensional electron gas / moleculat beam epitaxy (MBE) |
|---|
| Research Abstract |
In this project, we have proposed a new device, ferroelectric-gate high electron mobility transistor (F-HEMT), in which two dimensional electron gas (2DEG) can be controlled by the polarization of the ferroelectric film. In order to realize the device, we have investigated the growth of ferroelectric BaMgF_4 thin films on AlGaAs/GaAs HEMT structures using molecular beam epitaxy (MBE). An MBE system used in this project consists of a road-rock chamber and two growth chambers, where one is used for Ga (Al) As growth and the other for BaMgF_4 growht. First, we have shown that the (140) -oriented BaMgF_4 films can be grown on GaAs substrates above 500ﾟC.However, it has been found that electron mobility of 2DEG decreases when the BaMgF_4 film is grown above 600ﾟC,because of the inter-diffusion of the constituent elements. In addition, 2-step growth method has been proposed to grow high quality BaMgF_4 films, where the thin (140) -oriented BaMgF_4 layr is grown at 550ﾟC for a short time followed by the low temperature (300ﾟC) growth of amorphous BaMgF_4 films. Good ferroelectric properties and sharp interfaces have been obtained by annealing the BaMgF_4 films grown by the 2-step method. We have also studied the dry etching of BaMgF_4 thin films using Ar/Cl_2 as etching gases and found that the etching damage is less serious for the film etched by dry-etching process than by the normal wet chemical etching. Finally, we have fabricated BaMgF_4/AlGaAs/GaAs F-HEMTs for the first time and shown that the device has proper transistro characteristics with non-volatile memory function because of the ferroelectric nature of the BaMgF_4 film.
|
