| Project/Area Number |
07455137
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | SHIZUOKA UNIVERSITY |
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Principal Investigator |
TABE Michiharu SHIZUOKA UNIVERSITY,RESEARCH INSTITUTE OF ELECTRONICS,PROFESSOR, 電子工学研究所, 教授 (80262799)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1996: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1995: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | silicon nitridation / silicon quantum dot / photoelectron spectroscopy / scanning tunneling microscopy |
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| Research Abstract |
I have studied SiN nucleation on Si (111) 7x7 surface by thermal nitridation in vacuum and its masking effects against thermal oxidation for Si quantum dot formation. As oxidation conditions, etching mode oxidation in vacuum and film growth mode oxidation in a furnace were employed. As a result, following facts were found.
1. The nitrides, of which the thickness is about 0.5nm, have strong immunity against etching mode oxidation, resulting Si pillar formation. The height linearly increases with oxidation time.
2. The nitrides also work as oxidation masks for furnace-oxidation by taking the sample out of vacuum to the air. This result indicates that the proposed process is useful and effective in pillar and dot formation.
3. The size and density of pillars are corresponding to those of SiN nuclei and nm-scale structure is obtained by nitridation in a relatively low temperature range of 600-650C.
The next step is to apply this process to SOI substrates for fabricating Si dot arrays, which is being studied.
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