| Project/Area Number |
07455152
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Keio University |
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Principal Investigator |
MATSUMOTO Satoru Keio University, Department of Electrical Engineering, Professor, 理工学部, 教授 (00101999)
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| Co-Investigator(Kenkyū-buntansha) |
KUWANO Hiroshi Keio University, Department of Electrical Engineering, Professor, 理工学部, 教授 (10051525)
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| Project Period (FY) |
1995 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥7,500,000 (Direct Cost: ¥7,500,000)
Fiscal Year 1997: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1996: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1995: ¥4,200,000 (Direct Cost: ¥4,200,000)
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| Keywords | dopant (B,P,Sb) diffusion in Si / retarded diffusion of B and P / enhanced diffusion of Sb / Si_3N_4 / Si structure / Si_3N_4 film stress / compressive strain in Si / excess vacancy generation / interstitialcy component / シリコン / 不純物拡散 / 点欠陥 / 空格子点拡散係数 / 圧縮応力 / 空格子点 / 窒化膜応力 |
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| Research Abstract |
In the structure of silicon directly covered with silicon nitride (Si_3N_4) films, stresses of Si_3N_4 films and substrates during annealing, and its effect on boron (B) diffusion and extended defects are studied. During annealing, tensile stress is generated in the Si_3N_4 film, resulting in compressive stress at the surface of the substrates. From the results of Si_3N_4 film thickness and annealing temperature dependence on both B diffusivity and stress in the substrates, B diffusion is found to be retarded and the substrates are found to have high elastic compressive strain during annealing under the films. These results indicate that excess vacancies are generated by elastic compressive strain, causing the retardation of interstitial-mediated diffusion of B.The effect of Si_3N_4 films on diffusion of phosphorus (P) and antimony (Sb) in Si has also been studied. P diffusion is retarded, while Sb diffusion is enhanced in Si under nitride films. It is determined that fraction of interstitialcy component in P and Sb diffusion in Si is approximately 0.96 and 0, respectively.
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