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Production of the SiC/C Functionary-Gradient Material by the Chemical Vapor Infiltration Method and its Process Modeling

Research Project

Project/Area Number 07455313
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 反応・分離工学
Research InstitutionKyoto University

Principal Investigator

HASHIMOTO Kenji  Faculty of Engineering, Kyoto University, Professor, 工学研究科, 教授 (20025919)

Co-Investigator(Kenkyū-buntansha) MUKAI Shin  Faculty of Engineering, Kyoto University, Instructor, 工学研究科, 助手 (70243045)
KAWASE Motoaki  Faculty of Engineering, Kyoto University, Instructor, 工学研究科, 助手 (60231271)
MASUDA Takao  Faculty of Engineering, Kyoto University, Associate Professor, 工学研究科, 助教授 (20165715)
Project Period (FY) 1995 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥8,700,000 (Direct Cost: ¥8,700,000)
Fiscal Year 1996: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 1995: ¥7,400,000 (Direct Cost: ¥7,400,000)
KeywordsFunctionary-Gradient Material / Ceramic Composite / C / C Composite / Silicon Carbide / Chemical Vapor Infiltration / Numerical Simulation / CVI / CVD
Research Abstract

The objective of this work is to shorten the production time of the SiC/C functionary-gradient material (FGM) and to prevent the surface peeling by producing the FGM by the chemical vapor infiltration (CVI) method.
The fiber-reinforced FGM was produced using the specially designed reactor. 1,1,2-Trichloroethane and dimethyldichlorosilane were used to form carbon and silicon carbide, respectively. Distribution of silicon atom in the obtained FGM was measured by the X-ray micro-analyzer. The mathematical models were proposed to numerically simulate the FGM production by the CVI method. Simulations were carried out using the reaction rate equations of carbon and silicon carbide deposition that were determined in the independent experiments. Comparison between the experimental and calculated results indicated that the growth rate was greatly reduced when carbon and silicon carbide were co-deposited, and that the composition of silicon carbide in the FGM was lower than that estimated by the numerical simulation. Hence, kinetic analysis of the co-deposition of carbon and silicon carbide is carried out by use of the narrow-tube thermal CVD reactor. It was found that the growth of silicon carbide was hindered when carbon was deposited simultaneously.
When the heaters were installed inside the reaction chamber, carbon was deposited on the heaters, which reduced heating efficiency and did not allow stable operation. Hence, a new reactor which has the heater unit outside the vacuum chamber was designed and constructed. Using the new reactor, we continue to carry out the FGM production experiments.

Report

(3 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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