• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Study of Multiple Micro Cavity Semiconductor Lasers using Strained Quantum Wire Structure

Research Project

Project/Area Number 07455418
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTokyo Institute of Technology

Principal Investigator

ARAI Shigehisa  Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, Professor, 量子効果エレクトロニクス研究センター, 教授 (30151137)

Project Period (FY) 1995 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1996: ¥1,800,000 (Direct Cost: ¥1,800,000)
Keywordssemiconductor lasers / quantum wire lasers / strained quantum wire lasers / multiple micro cavity lasers / GaInAsP compound crystal / electron beam lithography / organo-metallic vapor phase epitaxy / dry etching / 歪量子細線 / マイクロキャビティー / GaInAsP / InP / 長波長レーザ
Research Abstract

In this work, to realize extremely low current operation of long-wavelength semiconductor lasers for communication, we have investigated the fabrication and lasing properties of strained quantum wire lasers due to increasing highly optical gain at the active region., and the theoretical analysis and fabrication of the newly proposed multiple micro cavity lasers.
Results obtained in this research are as follows.
1) 1.5mum-wavelength GaInAsP/InP quantum wire lasers were fabricated by electron beam lithography, and 2-step organic metal vapor phase epitaxy growth. Temperature dependence of the quantum wire lasers were measured and compared with the quantum film lasers fabricated on the same wafer. As the result, at a temperature below 200K,the internal quantum efficiency of the both lasers were almost same, and better lasing properties, such as low threshold current and high differential quantum efficiency of quantum wire lasers over quantum film lasers were confirmed. The reason for poor characteristics temperature of the quantum wire laser was considered to be due to non-radiative recombination at the interface of the quantum wire structure.
2) The static characteristics and the skew in modulation of the multiple micro cavity (MMC) lasers were studied theoretically due to the design of the optimum structure for low threshold current operation, and the drive current and design consideration of an ultra low threshold current laser for optical interconnection was also investigated.
3) MMC lasers with GaInAsP/InP strained-quantum-well active region were fabricated by wet chemical etching. The low threshold current density operation of 178A/cm^2 with broad contact was obtained at room temperature.
4) Stripe direction dependence of mesa angle was investigated for the fabrication of high reflective facet of MMC lasers. The high aspect ratio of narrow groove (0.45mm-wide) structure was fabricated using ECR dry etching.

Report

(3 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] K.C.Shin: "Drive current and design consideration of an ultra-low thresold current laser for optical data communication" IEEE J. Lightwave Technology. 15・5(No.5掲載予定). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.C.Shin: "Fabrication and low threshold current density operation of GaInAsP/InP multiple-reflector microcavity laser" Optical and Quantum Electron.28. 487-493 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Tamura: "Stripe direction dependence of mesa angle formed on (100) InP by selective etching using HCI solution" Jpn. J. Appl. Phys.35・4A. 2383-2384 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] S.Arai: "GaInAsP/InP multiple-microcavity laser for low threshold operation" First Optoelectron. and Commun. Conf. (OECC'96). 16D2-1. 70-71 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.C.Shin: "Calculation of a drive current in ultra-low threshold current laser" First Optoelectron. and Commun. Conf. (OECC'96). 18P-29. 478-479 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Kojima: "Temperature dependences of GaInAsP/InP compressively-strained quantumwire lasers fabricated by EB lithography and 2-step OMVPE growth" Eighth Conf. On Indium Phosphide & Related Materials, (IPRM'96). ThA1-5. 731-734 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.C.Shin: "Drive current and design consideration of an ultra-low threshold laser for optical data communication" IEEE J.Lightwave Technology. 15-5 (to be published). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.C.Shin: "Fabrication and low threshold current density operation of GaInAsP/InP multiple-reflector microcavity laser" Optical and quantum Electron.28. 487-493 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Tamura: "Stripe direction dependence of mesa angle formed on (100) InP by selective etching using HCl solution" Jpn.J.Appl.Phys.35-4A. 2383-2384 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] S.Arai: "GaInAsP/InP multiple-microcavity laser for low threshold operation" First Optoelectron..and Commun.Conf.(OECC'96). 16D2-1. 70-71 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.C.Shin: "Calculation of a drive current in ultra-low threshold current laser" First Optelectron. And Commun.Conf. (OECC'96). 18P-29. 478-479 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Kojima: "Temperature dependencies of GaInAsP/InP compressively-strained quantum-wire lasers fabricated by EB lithography and 2-step OMVPE growth" Eighth Conf.On Indium Phosphide & Related Materials, (IPRM'96). 731-734 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.C.Shin: "Drive current and design consideration of an ultra-low thresold current laser for optical data communication" IEEEJ.Lightwave Technology. 15・5(No.5掲載予定). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.C.Shin: "Fabrication and low threshold current density operation of GaInAsP/InP multiple-reflector microcavity laser" Optical and Quantum Electron.28. 487-493 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Tamura: "Stripe direction dependence of mesa angle formed on(100)InP by selective etching using HCl solution" Jpn.J.Appl.Phys.35・4A. 2382-2384 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Arai: "GaInAsP/InP multiple-microcavity laser for low threshold operation" First Optoelectron.and Commun.Conf.(OECC'96). 16D2-1. 70-71 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.C.Shin: "Calculation of a drive current in ultra-low threshold current laser" First Optoelectron.and Commun.Conf.(OECC'96). 18P-29. 478-479 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Kojima: "Temperature dependences of GaInAsP/InP compressively-strained quantumwire lasers fabricated by EB lithography and 2-step OMVPE growth" Eighth Conf.On Indium Phosphide & Related Materials,(IPRM'96). ThA1-5. 731-734 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Ki-Chul SHIN: "Low Threshold Current Density Operation of GaInAsP-InP Laser with Multiple Reflector Microcavities" IEEE Photonics Technology Letters. 7. 1119-1121 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Ki-Chul SHIN: "Temperature Dependence of Ga_<0.66>In_<0.34>As/InP Tensile-Strained Quaisi-Quantum-Wire Laser Fabricated by Wet Chemical Etching and 2-Step OMVPE Growth" IEEE Photonics Technology Letters. 7. 345-347 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Ki-Chul SHIN: "Fabrication and Low Threshold Current Density CW Operation of GaInAsP/InP Multiple-Reflector Micro-Cavity Laser" Optical and Quantum Electronics. 27. 12月号掲載 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Munehisa TAMURA: "Surface Damage in GaInAs/GaInAsP/InP Wire Structures Prepared by Substrate-Potential-Controlled Reactive Ion Beam Etching" Jpn. J. Appl. Phys.34. 3307-3308 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] Munehisa TAMURA: "Stripe Direction Dependence of Mesa Angle Formed on(100)InP by Selective Etching using Hcl Solution" Jpn. J. Appl. Phys.35(4月号掲載予定). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] Takashi KOJIMA: "Temperature Dependence of GaInAsP/InP Compressively-Strained Quantum-Wire Lasers Fabricated by EB-Lithography and 2-step OMVPE Growth" 8th Int. Conf. on InP and Related Materials. (4月発表予定). (1996)

    • Related Report
      1995 Annual Research Report

URL: 

Published: 1996-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi