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Development of twin-tip STM and application to surface science

Research Project

Project/Area Number 07504004
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 固体物性Ⅰ(光物性・半導体・誘電体)
Research InstitutionTokyo Institute of Technology

Principal Investigator

TANISHIRO Yasumasa (1996-1997)  Tokyo Institute of Technology, Physics department, Research associate, 理学部, 助手 (40143648)

八木 克道 (1995)  東京工業大学, 理学部, 教授 (90016072)

Co-Investigator(Kenkyū-buntansha) IWATUKI Masashi  JEOL Ltd., Electron Optics Division, TM Group, General manager, 電子光学機器技術本部, グループ長
谷城 康眞  東京工業大学, 理学部, 助手 (40143648)
Project Period (FY) 1995 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥36,800,000 (Direct Cost: ¥36,800,000)
Fiscal Year 1997: ¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 1996: ¥33,600,000 (Direct Cost: ¥33,600,000)
KeywordsTwin-tip / STM / surface / atomic structure / electronic property / 電気伝導 / Si / CaF_2 / SOI
Research Abstract

Twin-tip STM has been manufactured by way of trial to apply it into surface science for example, measurement of electric conductivity of surfaces, observation of wide area of surfaces, study on surface electromigration and fabrication and characterization of nanostructures on surfaces. Atomic resolution images of the Si(111)7x7 reconstructed surface have been obtained using either of scanning tips. The instrument has two retractable electrodes in addition to the two scanning tips so that the rlectric conductivity is measured by using four(six)-probe method. The electrodes can be used for applying the sample bias to a thin film insulated from the substrate for the STM observation of the sulface. It has been found that the sample valtage under the tip can be measured through the voltage of the tip under the STM imaging condition (sample bias of 2V and tunneling current of 1nA). thus, the electric conductivity of the sample can be measured without mechanical contact between the sample and … More the tip, the damage of the sample surface and the tip being avoided. Since probe current can be fed into the sample through the tip, electric property of Schottky contact beyween the tip and the sample can be studied under the well-defined condition.
The electric conductivity of the bulk part of semicoductor samples becomes much larger at high temperatures, where many sulface phase transition occurs and good quality adsorbate-induced structures and crystalline films grow. Semiconductor thin films insulated from the substrate are needed to measure the change of the surface electric conductivity due to the surface phase transitions and structure changes. Thus, epitaxial growth method of silicon thin crystal film which is insulated from the Si(111) substrate by calcium fluoride (CaF_2) film has been developed. Metal adsorption induced facetting of vicinal silicon surfaces has been also studied. Anisotropic surfaces formed there will be good subject of the twin-tip STM study, becouse those are expected to show interesting relation between the atomic structures and the electronic properties. Less

Report

(4 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • 1995 Annual Research Report
  • Research Products

    (25 results)

All Other

All Publications (25 results)

  • [Publications] Y.Tanishiro: "Dynamic Observation of In Adsorption on Si(111) by UHV-HT STM" Surface Sei.357/358. 407-413 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Iwatsuki: "High-temperature STM for Atomic processes on Semiconductor Surfaces." Appl. Surf. Sci.92. 321-330 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] C.Collazo-Davila: "Atomic Structure of the In on Si(111)4x1 Surface" Surface Rev.Lett.4. 65-70 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Tanishiro: "Epitaxial Growth of Si/CaF_2 on Si(111) Studied by RHEED,AES and SEM." in proc. of Japan-Germany Seminar on Mechanisms of Epitaxy and Properties of Coherent Thin Films. 31-38 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Chida: "Reversible phase Transition Between Metastable Structures of Si(111)c2x8 and ″1x1″ Studied by High Temperature STM" Surface Sci.(to be published). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Shimakura: "In situ Study of Gold-induced Surface Structures and Step Re-arrangements of Si(001) Surface by High-Temperature STM." Surface Sci. Lett.(to be published). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Tanishiro, K.Kaneko, H.Minoda, K.Yagi, T.Sueyoshi, T.Sato and M.Iwatsuki: "Dynamic Observation of In Adsorption on Si(111) by UHV High-temperature Scanning Tunneling Microscopy." Surface Science. 357/358. 407-413 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Iwatsuki, T.Sato and Y.Yamamoto: "High-temperature STM for Atomic Processes on semiconductor Surfaces." Appl.Sulf.Sci.62. 321-330 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] C.Collazo-Davila, L.D.Marks, K.Nishii and Y.Tanishiro: "Atomic Structure of the In on Si(111)4x1 Sulface." Sulface Review and Letters. 4-1. 65-70 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Tanishiro, M.Sakurai and K.Yagi: "Epitaxial Growth of Si/CaF_2 on Si(111) Studied by RHEED,AES and SEM." in Proc.of Japan-Germany Seminar on Mechanisms of Epitaxy and Properties of Coherent Thin Films. 31-38 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Chida, H.Minoda, Y.Tanishiro and K.Yagi: "Reversible Phase Trnsition Between Metastable Structures of Si(111)c2x8 and "1x1" Studied by High Temperature STM" Surface Sci.(to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Shimakura, H.Minoda, Y.Tanishiro and K.Yagi: "In situ Study of Gold-induced Surface Structures and Step Re-arrangements on Si(001) Surface by High-Temperature STM." Surface Sci.Lett.(to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] C.Collazo-Davila: "Atomic Structure of the In on Si(III)4_x1 Surface" Surface Rev.Lett.4・1. 65-70 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Tanishiro: "Epitaxial Growth of Si/CaF_2 on Si(III) Studied by RHEED,AES and SEM." in Proc.of Japan-Germany Seminar on Mechanisms of Epitaxy and Properties of Coherent Thin Films. 17-24 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Chida: "Reversible Phase Transition Between Metastable Structures of Si(III)c2x8 and "1x1" Studied by High Temperature STM." Surface Sci.(to be published). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Shimakura: "In situ Stuby of Gold-induced Surface Structures and Step Re-arrangements on Si(001) Surface by High-Temperature STM." Surface Sci.Lett.(to be published). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Tanishiro: "Dynamic Observation of In Adsorption on Si(111)by UHV-HT STM" Surface Sci.357/358. 407-413 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.V.Latyshev: "UHVREM Investigation of Interaction Between Step & Dislocation on Si(111)" Surface Sci.357/358. 550-554 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Suzuki: "REM Study of High Index Si(5 5 12)Flat Surfaces" Surface Sci.348. 335-343 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Minoda: "In Situ TEM Observation of Surfactant-Mediated Epitaxy" Surface Sci.357/358. 418-421 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Tamura: "Studies of Surface Stress by REM and TEM" Surface Scl.357/358. 576-580 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Tanishiro: "Dynamic Observation of In Adsorption on Si(111)Surface by UHV High-Temperature STM" in Proc. ICSS-9, Surface Sci. in Press.

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Suzuki: "STM Studies of Si(hhm)Surfaces with m/h = 1.4‐1.5" in Proc. ICSS-9, Surface Sci. in Press.

    • Related Report
      1995 Annual Research Report
  • [Publications] T.Suzuki: "STM Studies of Si(5 5 12)2×1 Surfaces" in Proc. ICSS-9, Surface Sci. in Press.

    • Related Report
      1995 Annual Research Report
  • [Publications] H.Tamura: "Studeies of Surface Stress by TEM and REM" in Proc. ICSS-9, Surface Sci. in Press.

    • Related Report
      1995 Annual Research Report

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Published: 1996-04-01   Modified: 2020-05-15  

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