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Development of an apparatus for the analysis of chemical reactions on surfaces equipped with a Helium beam apparatus.

Research Project

Project/Area Number 07504008
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 物質変換
Research InstitutionTohoku University

Principal Investigator

KUSUNOKI Isao  Tohoku Univ., Research institute for scientific measurement, professor, 化学計測研究所, 教授 (30025390)

Co-Investigator(Kenkyū-buntansha) RANGE Heiko  Tohoku Univ., Research institute for scientific measurement, assistant researche, 化学計測研究所, 助手
TAKAOKA Tsuyoshi  Tohoku Univ., Research institute for scientific measurement, assistant researche, 化学計測研究所, 助手 (90261479)
Project Period (FY) 1995 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥10,300,000 (Direct Cost: ¥10,300,000)
Fiscal Year 1997: ¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 1996: ¥7,200,000 (Direct Cost: ¥7,200,000)
Keywordsmolecular beam / He scattering / surface / chemical reaction / FTIR / LiF / differential pumping / stepping motor / ヘリウム原子散乱 / 表面反応 / 表面構造 / LiF / シリコン / エチレン / ヘリウム回折
Research Abstract

The purpose of this project is to develop an apparatus with which surface reactions and surface structures can be observed, by applying the techniques of supersonic molecular beam. With the apparatus, we want to control the surface reaction by varying the translational energy of molecules impinging on the surface, and observe the property of the reaction using the Helium beam scattering technique.
The apparatus is composed of a molecular beam apparatus, a manipulator with which the position of the sample is controlled, a rotatable mass spectrometer, a vacuum chamber and a pumping system.The molecular beam apparatus is working well in point of the triply differential pumping and the control of the translational energy of molecules. As to the manipulator, by the use of stepping motors for use in UHV,the sample can be controlled with high precision which is needed for the experiment of He beam scattering. The rotatable mass spectrometer and a double differential pumping system constructed to reduce the background gas are rotated around the sample.
By performing the experiments described below, we ascertained the enough performance of the apparatus.
1.We performed He diffraction experiment. We observed the diffraction pattern corresponding to LiF (100) surface structure in the angular distribution of He atoms scattered from the surface when He beam is directed to the sample. We confirmed that the surface structure is measured by the use of He beam.
2.We observed that the intensity of specular reflection of He beam from Ni (100) surface decrease with increasing the amount of the adsorbate.
3.We observed spectra of submonolayr CO and NH_3 adsorbed on Ni (100) surface.

Report

(4 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • 1995 Annual Research Report
  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] I.Kusunoki: "Nitridation processes of Si,Ti,Fe with a low enegy N_2^+ionbeam." Scanning Microscopy. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] I.Kusunoki: "Comparison between the Reaction Mechanisms of Nitridation of Si(100) by a NH_3 Molecular Beam and by a N_2^+ Ion Beam." Surface Review and Letters. 5. 81- (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Takaoka: "Initial stage of SiC grown on Si(100)surface." Journal of Crystal growth. 183. 175-182 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Ishidzuka: "Nitridation of Si(100)surface with NH_3." Applied Surface Science. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 高見 知秀: "走査型オージェ電子分光法による亜鉛ドープNdFeCoB磁石の観察." 東北大学科学計測研究所報告. 46. 59-68 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Takaoka: "Study of initial stage of SiC growth on Si(100)surface by XPS,RHEED,and SEM." Silicon Carbide and Related Materials. (印刷中).

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] I.Kusunoki: "Nitridation processes of Si, Ti, Fe with a low energy N_2^+ ion beam." Scanning Microscopy. (in press.).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] I.Kusunoki: "Comparison between the Reaction Mechanisms of Nitridation of Si (100) by a NH_3 Molecular Beam and by a N_2^+ Ion Beam." Surface Review and Letters. 5. 81 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Takaoka: "Initial stage of SiC grown on Si (100) surface" J.Crystal growth. 183. 175-182 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Ishidzuka: "Nitridation of Si (100) surface with NH_3." Appl.Surf.Sci.(in press.).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Takami: "Observation of NdFeB Magnet by Auger Electron Spectroscopy, X-ray Photoelectron Spectroscopy, Secondary Ion Mass Spectroscopy, and Atomic Force Microscopy" Bulletin of RISM,Tohoku Univ.46. 59-68 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Takaoka: "Study of initial stage of SiC growth on Si (100) surface by XPS,RHEED,and SEM." Silicon Carbide and Related Materials. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] I.Kusunoki: "Nitridation of Silicon,Titanium,and lron surfaces with a low energy N_2^+ion beam." Scanning Microscopy. 印刷中.

    • Related Report
      1997 Annual Research Report
  • [Publications] I.Kusunoki: "Comparison between the Reaction Mechanisms of Nitridation of Si(100)by a NH_3 molecular beam and by a N_2^+ion beam." Surface Reviews and Letters. 印刷中.

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Takaoka: "Initial stage of SiC growth on Si(100)surface" Journal of Crystal Growth. 183. 175-182 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Ishidzuka: "Nitridation of Si(100) surface with NH_3" Applied Surface Science. 印刷中.

    • Related Report
      1997 Annual Research Report
  • [Publications] 高見知秀: "オージェ電子分光、X線光電子分光、二次イオン質量分析、および原子間力顕微鏡によるNdFeB磁石の観察" 東北大学科学計測研究所報告. 印刷中.

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Takaoka: "Study of initial stage of SiC growth on Si(100)surface by XPS,RHEED,and SEM." Silicon Carbide and Related Materials. 印刷中.

    • Related Report
      1997 Annual Research Report
  • [Publications] I. Kusunoki et al.: "Reaction of Si surface with a C_2H_4 beam" Surface Science. (印刷中).

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Takagaki et al.: "XPS study of the reaction of the Si (100) surface with a C_2H_4 beam" Appliead Surface Science. 92. 287-290 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] I. Kusunoki et al.: "Si-C alloy and Si Cx layer formation on Si (100) by reaction with a C_2H_4 beam" Imst. Plys. Conf. Ser.142. 1059-1062 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] I. Kusunoki et al: "Photodissociation and desorption of multilayer acetone on a Si (100) surface by 193 nm laser irradiation" Surface Science. 357-358. 693-697 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Takaoka et al.: "Observation of C (4×4) LEED pattern induced by reaction of Si (100) surface with C_2H_4" Surface Science. 347. 105-110 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] I. Kusunoki et al.: "Comparison between the reaction mechanisms of nitridation of Si (100) by a NH_3 moleculor beam and a N_2^+ in beam" Surface Review and Letters. (印刷中).

    • Related Report
      1996 Annual Research Report
  • [Publications] 楠 勲: "表面における分子線散乱" 表面科学. 16. 587-591 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Takagaki et al: "XPS study of the reaction of the Si(100)surface with a C_2H_4 beam" Applied Surface Science. (印刷中).

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Takaoka et al: "Observation of C(4×4)LEED pattern induced by reaction of S_i(100)surface with C_2H_4" Surface Science. 347. 105-110 (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] I.Kusunoki et al: "S_iC alloy and S_iC_x layer formation on S_i(100) by reaction with a C_2H_4 beam" Silicon Carbide and Related Materials. (印刷中).

    • Related Report
      1995 Annual Research Report
  • [Publications] I. Kusunoki et al: "Photo dissociation and desorption of multilayer acetone on S_i(100)surface by 193nm laser irratliation" Surface Science. (印刷中).

    • Related Report
      1995 Annual Research Report
  • [Publications] 亀井信一,他: "飛行時間解析法によるアンモニアクラスターの生成過程に関する研究" 東北大学科学計測研究所報告. 44. 41-51 (1995)

    • Related Report
      1995 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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