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Tunable Semiconductor Ultrashort Optic al Puse Generator

Research Project

Project/Area Number 07555011
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied optics/Quantum optical engineering
Research InstitutionThe University of Tokyo

Principal Investigator

KAMIYA Takeshi  The Univ.of Tokyo, Dept.of Electronic Engg.Professor, 大学院・工学系研究所, 教授 (70010791)

Co-Investigator(Kenkyū-buntansha) HOSOMATSU Haruo  TERATEC Co.Ltd., Dirctor, 研究第1部, 部長
TSUCHIYA Masahiro  The Univ.of Tokyo, Dept.of Electronic Engg.Associate Professor, 大学院・工学系研究所, 助教授 (50183869)
Project Period (FY) 1995 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥19,300,000 (Direct Cost: ¥19,300,000)
Fiscal Year 1997: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 1996: ¥9,300,000 (Direct Cost: ¥9,300,000)
Fiscal Year 1995: ¥7,400,000 (Direct Cost: ¥7,400,000)
Keywordssemicondutor laser / mode-locked laser / femto second / optical pulse / optical communication / wavelength tuning / optical thin film / anti-reflection coating / 光学薄膜 / レーザ / モードロッキング / 波長可変レーザ / 超高速光エレクトロニクス / パルスレーザ / 波長制御 / ハイブリッドモードロック / 同期 / チャープ
Research Abstract

The most advanced technology of very large capacity optical communication is the combination of TDM (Time Division Multiplexing) and WDM (Wavelength Division Multiplexing). To test the equipment and components, it is required to develop a high performance optical pulse generator, satiffying conditions (I) pulse width around 1ps, (ii) tuning range 30-100nm. To realize high performance pulse generator, we have investigated three most important issues : (1) stability and chirp charactersitics of external cavity mode-locked semiconductor lasers ; (2) high quality, broad band antireflection coaitn design and fabrication ; (3) realization of tunable mode-locked semiconductor lasers operating at 1.3 and 1.5 um. As for the theory, it was succesfully explained that actively vs. passively mode-locked lasers have red-vs. blue-shift chirp characteristics due to the change of alpha parameters dominated by gain-vs. absorber-region. In addition the tendency of increased chirp due to carrier heating process was predicted. Secondly as for anti-reflection coating, a new design algorithm was proposed : in contrast to the conventional procedure starting with the optical admittance matching condition, the value function of wavelength bandwidth was introduced, and search for the maximum value function in design parmeter space was developed. Experimental trial achieved the band width of 30nm for reflectance less than 10^<-4>. Finally anti-reflection coating was formed for laser chips.
Tunability ranging from 1322nm and 1352nm (30nm range) was achieved keeping the pulse width less than 20ps. It is a straightford procedure to compress it to 1 ps using fiber-optic compresser as the present authors have recently demonstrated.

Report

(4 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • 1995 Annual Research Report
  • Research Products

    (15 results)

All Other

All Publications (15 results)

  • [Publications] J.Lee, Tanaka et al.: "Novel Design Procedure BroadbandMultilayer Antirelection Coatings for Optical and Optoelectronic Devices" Journal of Lightwave Technology. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.Lee, Tanaka et al.: "Broadband Double Laser Antireflection Coatings for Semiconbuctor Laser Amplifiers" Japanese Journal of Applied Physics. VO1.36 NO.1A/B. L52-L54 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 佐々木 正次 他: "二層反射防止膜による1.3mm帯波長可変モード同期半導体レーザ" 春季電子情報通信学会合同大会. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.Lee, T.Tanaka et al.: "Novel Design Procedure of Broadband Multilayr Antireflection Coatings for Optical and Optoelectronic Devices" Journal of Lightwave Technology. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.Lee, T.Tanaka et al.: "Broadband Double Laser Antireflection Coatings for Semiconductor Laser Amplifiers" Japanese Journal of Applied Physics. Vol.36 NO.1A/B. L52-L54 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Sasaki et al.: "1.3mm tunable mode-locked semiconductor laser by two layr anti-reflection coating" Spring Convention of IEICE. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.Lee, T.Tanaka et al.: "Novel Design Procedure of Broadband Multilayer Antireflection Coatings for Optical and Optoelectronic Devices" Journal of Lightwave Technology. (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] J.Lee, T.Tanaka et al.: "Broadband Double Laser Antireflection Coatings for Semiconductor Laser Amplifiers" Japanese Journal of Applied Physics. Vol.36 No.1A/B. L52-L54 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 佐々木正次他: "二層反射防止膜による1.3mm帯波長可変モード同期半導体レーザ" 春季電子情報通信学会合同大会. (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Schell: "Chirp and stability of mode-locked semiconductor lasers" IEEE Journal of Quantum Electronics. No.7Vol.32. 1180-1190 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] J.Lee: "Broadband Double-Layer Antireflection Coatings for Semiconductor Laser Amplifiers" Japanese Journal of Applied Physics. No.1A/BVol.36. L52-L54 (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] M. Schell: "Chirp of Passively and actively mode-locked semiconductor lasers" Applied Physics Letters. 67. 1797-1799 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] M. Schell: "Widely Tunable Generation of Bandwidth-Limited Short Light Pulses by Passive Mode-locking" Tech. Digest of CLEO/Pacific Rim'95. FV5. 237-238 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Hoshida: "Subharmonic hybrid mode-locking of a 33GHz multi-section semiconductor laser" Tech. Digest of CLEO'96. (to be presented). (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] T. Hoshida: "Phase Noise Suppression of a 33GHz Passively Mode-Locked Semiconductor Laser by Subharmonic Electrical Signals" Femtosecond Technology(FST'96). 120 (1996)

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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