| Project/Area Number |
07555093
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 試験 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
HASHIZUME Tamotsu Hokkaido Univ., Fac.of Eng., Ass.Pro., 工学部, 助教授 (80149898)
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| Co-Investigator(Kenkyū-buntansha) |
SEKI Shouhei Oki Electric Ind.Co., Group Leader, 研究開発本部・半導体技術研究所, グループリーダー(研
WU Nan-jan Hokkaido Univ., Fac.of Eng., Res.Ass., 工学部, 助手 (00250481)
AKAZAWA Masamichi Hokkaido Univ., Fac.of Eng., Ass.Pro., 工学部, 助教授 (30212400)
HASEGAWA Hideki Hokkaido Univ., Fac.of Eng., Pro., 工学部, 教授 (60001781)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥4,800,000 (Direct Cost: ¥4,800,000)
Fiscal Year 1996: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 1995: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | indium phosphide / Schottky barrier / FET / optoelectronic ICs / electrochemical process / micro-wave devices / optical communication system |
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| Research Abstract |
The purpose of this study is to realize Schottky contacts with high barrier height to n-InP by a novel in-situ electrochemical process and to apply this Schottky gate technology to fabrication InP MESFETs and related high-speed integrated circuits and optoelectronic integrated circuits. The main results obtained are listed below :
(1) A novel in-situ electrochemical process enables us to produce Pt/n-InP Schottky diodes with a barrier height of 0.86eV or higher and n-value of 1.1 or lower.
(2) Capacitance-voltage measurements, Raman spectroscopy and X-ray photoelectron spectroscopy revealed that the Pt/InP interfaces without stress and transition layr including oxides were obtained by the novel electrochemical process.
(3) By use of this novel Schottky gate formation process, Pt-gate n-InP MESFETs were successfully fabricated. The fabricated MESFETs exhibited good gate control of drain current as well as pinch-off behavior. The maximum transconductance of 23 mS and the minimum gate leakage current of 100nA at Vg=-5V were obtained. Furthermore, the Pt Schottky gate can control the drain current even under the positive gate voltage condition, indicating a possibility of enhancement-mode operation.
(4) High Schottky barrier heights of 0.9eV and 0.5eV were obtained for n-InAlAs and n-InGaAs materials, respectively, by electrochemical deposition of Pt. These results are very attractive for gate formation on InAlAs/InGaAs high electron mobility transistor (HEMT) structures.
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