| Project/Area Number |
07555095
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 試験 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | TOHOKU UNIVERSITY |
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Principal Investigator |
OHNO Hideo Tohoku University, Research Inst.of Electrical Communication., Professor, 電気通信研究所, 教授 (00152215)
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| Co-Investigator(Kenkyū-buntansha) |
YOKOYAMA Naoki Fujitsu Laboratories, Senior Research Manager, 基盤技術研究所・機能デバイス部, 部長(研究職)
OHNO Yuzo Tohoku University, Res.Inst.of Electrical Commun., Res.Associate, 電気通信研究所, 助手 (00282012)
MATSUKURA Fumihiro Tohoku University, Res.Inst.of Electrical Commun., Res.Associate, 電気通信研究所, 助手 (50261574)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥8,300,000 (Direct Cost: ¥8,300,000)
Fiscal Year 1996: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 1995: ¥4,400,000 (Direct Cost: ¥4,400,000)
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| Keywords | III-V Compound Semiconductor / III-V Diluted Magnetic Semiconductor / Memory Device / Molecular Beam Epitaxy / (Ga, Mn)As / Ferromagnetic Materials / Diluted Magnetic Semiconductor |
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| Research Abstract |
In order to asses the feasibility of memory devices based on ferromagnetic diluted magnetic semiconductors (DMS's)'study on III-V based ferromagnetic DMS's, its processing technology, memory devices structures has been carried out. The following results have been obtained.
(1)New III-V based ferromagnetic DMS based on GaAs, (Ga, Mn)As, has been synthesized for the first time by low temperature molecular beam epitaxy (MBE). Maximum Mn mole fraction was found to be 0.071. X-ray diffraction study showed increase of lattice constant with increase of Mn mole fraction (vegard's law). This material may be suitable for the memory application since it can be easily integrated with existing III-V circuity.
(2)Magnetization as well as magnetotransport measurements showed that (Ga, Mn)As is ferromagnetic ; the highest curie temperature so far obtained was 110K.Curie temperature is proportional to Mn mole fraction below 0.05.
(3)Reversing the strain direction in (Ga, Mn)As by using InGaAs buffer layrs, it was shown that the easy axis can be made perpendicular to the sample plane. This is very important finding for the memory application using anomalous Hall effect for reading the information stored in memory.
(4)From critical scattering and Curie temperature, it was found that the origin of ferromagnetism is RKKY interaction.
(5)Processing technology for memory fabrication has been developed and memory elements were fabricated to study its potential for applicaitons.
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