| Project/Area Number |
07555100
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | NAGOYA UNIVERSITY |
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Principal Investigator |
TAKEDA Yoshikazu NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,PROFESSOR, 工学研究科, 教授 (20111932)
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| Co-Investigator(Kenkyū-buntansha) |
澤井 巳喜夫 サムコ, インターナショナル研究所・技術開発部, 研究員
TATSUTA Toshiaki SAMCO INTERNATIONAL LABORATORY,DEVELOPMENT DIVISION,DIVISION HEAD, インターナショナル研究所・技術開発部, 研究員
NONOGAKI Yoichiro OKAZAKI NATIONAL RESERACH INSTITUTES,INSTITUTE FOR MOLECULAR SCIENCE,RESEARCH AS, 分子科学研究所, 助手 (40300719)
TABUCHI Masao NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,ASSISTANT PROF, 工学部, 講師 (90222124)
FUJIWARA Yasufumi NAGOYA UNIVERSITY,DEPARTMENT OF MATERIALS SCIENCE AND ENGINEERING,ASSOCIATE PROF, 工学研究科, 助教授 (10181421)
OYANAGI Hiroyuki ELECTROTECHNICAL LABORATORY,EXOTIC MATERIALS RESEARCH LABORATORY,LABORATORY HEAD
大柳 宏之 電子技術総合研究所, 電子基礎部, 研究員
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| Project Period (FY) |
1995 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥23,100,000 (Direct Cost: ¥23,100,000)
Fiscal Year 1997: ¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 1996: ¥7,800,000 (Direct Cost: ¥7,800,000)
Fiscal Year 1995: ¥13,600,000 (Direct Cost: ¥13,600,000)
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| Keywords | SEMICONDUCTORS / INSULATORS / METALS / HYBRID STRUCTURES / QUANTUM FUNCTIONS / GROWTH SYSTEM |
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| Research Abstract |
To realize such a hybrid structure as smiconductor/insulator/metal for a new quantum functional materials, conventional growth techniques are of no use. The hetero-interface must be controlled to one monolayr accuracy. We designed and fabricated a new reactor structure in OMVPE system with very quick switching of source gases and correpondong pressure balance in the low-pressure vertical reactor.
To test the basic capability of the new growth system, InP/InGaAs/InP with monolayr level InGaAs and with different switching modes of source gases were grown and the heterointerface structures were investigated mainly by the X-ray CTR scattering and interference using synchrotron radiation.
delta-doped ErP structures in InP were also fabricated and the layr structure and even the crystal structure of the ErP were elucidated by fluorescence-detected EXAFS and X-ray CTR scattering. The ErP layr was found to be the rocksalt structure by both techniques and the Er distribution (as-grown and after anealing) was determined to one monolayr level. From the growth temperature dependence of the local structures around Er atoms it was very clearly concluded that the strong dependence of the photo-luminescecce intensity on the growth temperature is determined by the local structure around the Er atoms, i.e., zincblende strucrtre gives a high intensity and the rocksalt structure almost diminshes the luminescene.
The versatile switching modes of the new growth system enabled the droplet hetero-epitaxy by which InAs quantum dots on InP (001)-just surface were successfully fabricated and showed emission in the 1.5mum-region which is important for the optical fiber communication.
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