• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Studies of High Quality InP Layrs Heteroepitaxially Grown on Si Substrates by Epitaxial Lateral Overgrowth and Fabrication of Long-wavelengh Laser Diodes

Research Project

Project/Area Number 07555107
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionThe University of Tokyo

Principal Investigator

NISHINAGA Tatau  The University of Tokyo, The Graduate School of Engineering, Professor, 大学院・工学系研究科, 教授 (10023128)

Co-Investigator(Kenkyū-buntansha) TACHIKAWA Masami  NTT Opto-electronics Laboratories Photonic Functional Device Laboratory Senior R, 光エレクトロニクス研究所 光素子研究部, 主任研究員
MORI Hidefumi  NTT Opto-electronics Laboratories Photonic functional Device Laboratory Research, 光エレクトロニクス研究所 光素子研究部, グループリーダー
NARITSUKA Shigeya  The University of Tokyo, The Graduate School of Engineering, Assistant Professor, 大学院・工学系研究科, 助手 (80282680)
TANAKA Masaaki  The University of Tokyo, The Graduate School of Engineering, Associate Professor, 大学院・工学系研究科, 助教授 (30192636)
Project Period (FY) 1995 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥14,000,000 (Direct Cost: ¥14,000,000)
Fiscal Year 1997: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 1996: ¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 1995: ¥7,500,000 (Direct Cost: ¥7,500,000)
Keywordsheteroepitaxy / silicon (Si) / Indiumphosphide (InP) / epitaxial lateral overgrowth (ELO) / dislocation-free region / Opto-electronic Integrated circuit (OEIC) / release of residual stress / laser diode / 液相エピタキシャル法(LPE) / ELO比 / 横方向成長法(ELO) / 有限要素法 / 空間分解フォトルミネッセンス法 / ヘテロエピタキシャル成長 / 空間分解フォトルミネッセンス測定 / インジウム燐(InP) / Si基板 / MQW構造 / VME(Vapour Mixing Epitaxy)
Research Abstract

Growth of III-V materials on Si substrates is a key technology for fabricating opto-electronic integrated circuits (OEICs). Though a lot of studies about the growth of III-V materials on Si have been carried out, a large lattice mismatch and a big difference in the thermal expansion coefficient between III-V materials and Si substrates still bring high dislocation density (-10^6 cm^<-2>) and strong residual stress in the layrs. The dislocations in the III-V materials strongly deteriorate the device characteristics and their lives, therefore, further crystallinity improvement is necessary to obtain devices with high performance and excellent reliability.
Epitaxial lateral overgrowth (ELO) which is a new technique to grow thin layrs laterally through an opening in SiO_2 film, which is called as "a line seed", is a very promising technique to overcome these difficulties. In ELO,propagation of dislocations is stopped by the SiO_2 mask and dislocation-free areas are obtained on the laterally overgrown regions.
In order to grow dislocation-free InP layrs on Si substrates, ELO technique was used and a long-wavelength laserdiode structure was fabricated on it.
Spatially resolved photoluminescence measurements showed that the optical quality of the ELO layrs was almost the same as that of a homoepitaxially grown InP layr. The ELO technique is not only useful to obtain dislocation-free regions but also useful to release residual stress. The growth mechanism of ELO was also studied in terms of the surface supersaturation. The optimized growth condition brought wide dislocation-free InP layrs on Si substrates with high reproducibility. The long-wavelength laserdiode structure fabricated on the ELO layr showed excellent optical quality, which suggests the realization of the laser with high performances. 3-dimensional finite element method calculation showed that the island structures of ELO layrs were useful to reduce the residual stress.

Report

(4 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • 1995 Annual Research Report
  • Research Products

    (51 results)

All Other

All Publications (51 results)

  • [Publications] S.Naritsuka and T.Nishinaga: "Epitaxial lateral overgrowth of InP by liquid phase epitaxy" J.Cryst.Growth. 146. 314-318 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "InP Layer Grown on(001) Silicon Substrate by Epitaxial Lateral Overgrowth" Jpn.J.Appl.Phys.34. L1432-L1435 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "Reduction of defects and stress in InP grown on(001) silicon substrate by Epitaxial Lateral Overgrowth" The 14th Electronic Materials Symposium. 129-132 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, S.Naritsuka and T.Nishinaga: "Difference in the initial stage between solid phase epitaxy and molecular beam epitaxy of GaAs on Si(001)" The 14th Electrinic Materials Symposium. 119-122 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "Spatially Resolve Photoluminescense of Laterally Overgrown InP on InP-coated Si Substrates" The ninth international conference on vapor growth and epitaxy. 89-89 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.S.Chang, S.Naritsuka and T.Nishinaga: "The Epitaxial Growth of High Quality GaAs on Si by MBE/LPE Hybrid Method" The ninth international conference on vapor growth and epitaxy. 84-84 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, S.Naritsuka and T.Nishinaga: "Crystallization Process of Amorphos GaAs Buffer-layers in the Heteroepitaxial Growth of GaAs" The ninth international conference on vapor growth and epitaxy. 97-97 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, S.Naritsuka and T.Nishinaga: "Microchannel epitaxy of GaAs on Si(001) substrates using SiO_2 shadow masks" The 15th Electronic Material Symposium. 169-172 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "Spatially resolves photoluminescense of laterally overgrown InP on InP-coated Si substrates" J.Cryst.Growth. 174. 622-629 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, S.Naritsuka and T.Nishinaga: "Crystallization process of omorphous GaAs buffer-layers in the heteroepitaxial growth of GaAs" J.Cryst.Growth. 174. 635-640 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.S.Chang, S.Naritsuka and T.Nishinaga: "The epitaxial growth of high quality GaAs on Si by MBE/LPE hybrid method" J.Cryst.Growth. 174. 630-634 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka, Y.S.Chang, K.Tachibana and T.Nishinaga: "Vertical Cavity Surface Emitting Laser fabricated on GaAs laterally grown on Si substrate" Proceeding of 192nd Electrochemical Society Meeting. 86-90 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.S.Chang, S.Naritsuka and T.Nishinaga: "Epitaxial Lateral Overgrowth wide dislocation-free GaAs on Si substrate" Proceeding of 192nd Electrochemical Society Meeting. 196-200 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Z.Yan, S.Naritsuka and Nishinaga: "Interface Supersaturation in Epitaxial Lateral Overgrowth on InP" Proceeding of 192nd Electrochemical Society Meeting. 161-165 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, K.Toyoda, S.Naritsuka and T.Nishinaga: "Microchannnel Epitaxy of GaAs on Si(001) substrates using SiO_2 Shadow Masks" Proceeding of 192nd Electrochemical Society Meeting. 184-188 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "2-dimensional Nucleation at Stacking Fault during InP Microchannel Epitaxy" The 12th International Conference on Crystal Growth. 発表予定. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Z.Yan, S.Naritsuka and T.Nishinaga: "Interface Supersaturation Dependence of Step Velocity in Liquid Phase Epitaxy of InP" The 12th International Conference on Crystal Growth. 発表予定. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "InP Layr Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth" Jpn.J.Appl.Phys.34. L1432-1435 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "Epitaxial lateral overgrowth of InP by liquid phase epitaxy" J.Cryst.Growth. 146. 314-318 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "Reduction of defects and stress in InP grown on (001) silicon substrate by Epitaxial Lateral Overgrowth" The 14th Electronic Materials Symposium, Izu-Nagaoka, July 5th-7th, Symposium Record. 129-132 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, S.Naritsuka and T.Nishinaga: "Difference in the initial stage between solid phase epitaxy and molecular beam epitaxy of GaAs on Si (001)" The 14th Electronic Materials Symposium, Izu-Nagaoka, July 5th-7th, Symposium Record. 119-122 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "Spatially Resolved Photoluminescence of Laterally Overgrown InP on InP-coated Si Substrates" The ninth international conference on vapor growth and epitaxy, Vail, Colorado, USA,August 4-9. (Abstracts). 89 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.S.Chang, S.Naritsuka and T.Nishinaga: "The Epitaxial Growth of High Quality GaAs on Si by MBE/LPE Hybrid Method" The ninth international conference on vapor growth and epitaxy, Vail, Colorado, USA,August 4-9. (Abstracts). 84 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, S.Naritsuka and T.Nishinaga: "Crystallization Process of Amorphos GaAs Buffer-layrs in the Heteroepitaxial Growth of GaAs on Si (001) substrates" The ninth international conference on vapor growth and epitaxy, Vail, Colorado, USA,August 4-9. (Abstracts). 97 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, S.Naritsuka and T.Nishinaga: "Microchannel epitaxy of GaAs on Si (001) substrates using SiO_2 shadow masks" The 15th Electronic Materials Symposium, Izu-Nagaoka, July 10th-12th, Symposium Record. 169-172 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "Spatially resolves Photoluminescence of laterally overgrown InP on InP-coated Si Substrates" J.Cryst.Growth. 174. 622 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, S.Naritsuka and T.Nishinaga: "Crystallization Process of amorphous GaAs buffer-layrs in the heteroepitaxial growth of GaAs on Si (001) substrates" J.Cryst.Growth. 174. 635 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.S.Chang, S.Naritsuka and T.Nishinaga: "The epitaxial growth of high quality GaAs on Si by MBE/LPE hybrid method" J.Cryst.Growth. 174. 630 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka, Y.S.Chang, K.Tachibana and T.Nishinaga: "Vertical Cavity Surface Emitting Laser fabricated on GaAs laterally grown on Si substrate (Invited)" Proceeding of 192nd Electrochemical Society Meeting, Paris, Frace, August 31-September5. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.S.Chang, S.Naritsuka and T.Nishinaga: "Epitaxial Lateral Overgrowth of wide dislocation-free GaAs on Si substrate" Proceeding of 192nd Electrochemical Society Meeting, Paris, Frace, August 31-September5. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Z.Yan, S.Naritsuka and T.Nishinaga: "Interface Supersaturation in Epitaxial Lateral Overgrowth on InP" Proceeding of 192nd Electrochemical Society Meeting, Paris, Frace, August 31-September5. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsunaga, K.Toyoda, S.Naritsuka and T.Nishinaga: "Microchannel Epitaxy of GaAs on Si (001) substrates using SiO_2 Shadow Masks" Proceeding of 192nd Electrochemical Society Meeting, Paris, Frace, August 31-September5. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka and T.Nishinaga: "2-dimensional Nucleation at Stacking Fault during InP Microchannel Epitaxy" The 12th International Conference on Crystal Growth, July 26-31 1998 (Jerusalem, Israel).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Z.Yan, S.Naritsuka and T.Nishinaga: "Interface Supersaturation Dependence of Step Velocity in Liquid Phase Epitaxy of InP" The 12th International Conference on Crystal Growth, July 26-31 1998 (Jerusalem, Israel).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Naritsuka, Y.S.Chang, K.Tachibana and T.Nishinaga: "Virtical Cavity Surface Emitting Laser Fabricated on GaAs laterally Grown on Si Substral" Proc.27th State-of the Art Program on compound semiconductors (SOTAPOCSXXVII). 86-90 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Z.Yan, S.Naritsuka and T.Nishinaga: "Interface Supersaturation in Epitaxial Lateral Overgrowth of InP" Proc.27th State-of the Art Program on compound semiconductors (SOTAPOCSXXVII). 161-165 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Matsunaga, K.Toyoda, S.Naritsuka and T.Nishinaga: "Microchannel Epitaxy of GaAs on Si (001) Substrates Using SiO2 Shadow Masks" Proc.27th State-of the Art Program on compound semiconductors (SOTAPOCSXXVII). 184-188 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.S.Chang, S.Naritsuka and T.Nishinaga: "Epitaxial Lateral Overgrowth of Wide Dislocation-Free GaAs on Si Substrates" Proc.27th State-of the Art Program on compound semiconductors (SOTAPOCSXXVII). 196-200 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Naritsuka and T.Nishinaga: "Spitially resolved photoluminescence of laterally overgrown InP on InP-coated Si substrate" J.Crystal Growth. 174. 622-629 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.matsunaga, S.naritsuka, T.Nishinaga: "Crystallization process of amprphous GaAs buffer layers for the heteroepitaxial growth of GaAs in Si (001) substrates" J.Crystal Growth,. 173. A635-640 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.S.Chang, S.Nariatsuka, T.Nishinaga: "Effect of growth temperature on epitaxial lateral overgrowth of GaAs on Si substrate" J.Crystal Growth,. 174. 630-634 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Matsunaga,S.Narisuka and T.Nishinaga: "Micro-channel epitaxy of GaAs on Si(001)substrates using SiO_2 shadow masks," Record of 15th Electronic Materials Symposium,Nagaoka,. 15. 171-176 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] G.Bacchin,K.Tsunoda and T.Nishinaga: "Periodic Supply Epitaxy for the Selective Area Growth of GaAs on GaAs(111)B by MBE" Record of 15th Electronic Materials Symposium,1996,Nagaoka. 15. 177-180 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.W.Ren and T.Nishinaga: "Real time observation of reconstruction transition o GaAs(111)B vicinal surface by scanning electron microscopy," Extended Abstract,9th Meeting of KACG and 3rd Korea-Japan EMG Symposium,Onyang. 9. 14-16 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.W.Ren,X.Q.Shen and T.Nishinaga:"In situ observation of macrostep formation on misoriented GaAs(111)B by molecular beam epitaxy," J.Crystal Growth. 166. 217-221 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Nishinaga and H.J.Scheel:"Crystal Growth Aspect of High-Tc Superconductors,in Advances in Superconductivity VIII,eds.H.Hayakawa and Y.Enomoto," Springer,1996. 8. 33-38 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.W.Ren and T.Nishinaga: "Reconstruction transitions during molecular-beam epitaxy on GaAs(111)B vicinal surfaces studied by scanning election microscopy," Phys.Rev.B54(1996). B54. R11054-R11057. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y. Matsunaga, S. Naritsuka and T. Nishinaga: "Difference in the intial stage between solid phase epitaxy and molecular beam epitaxy of GaAs on Si(001)" 14th Record of Electronic Materials Symposium, Izu Nagaoka(1995). 14. 119-122 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] S. Naritsuka and T. Nishinaga: "Reduction of defect and stress in InP grown on (001) silicon substrate by Epitaxial Lateral Over-growth" 14th Record of Electronic Materials Symposium, Izu Nagaoka(1995). 14. 129-132 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] W. Y. Uen, T. Ohori, T. Nishinaga: "Molecular beam epitaxy of gallium arsenide on 0.3°-misoriented epitaxy Si substrates" Journal of Crystal Growth. 156. 133-139 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] S. Naritsuka, T. Nishinaga, M. Tachikawa and H. Mori: "InP Layer Grown on (001) Silicon Substrate by Epitaxial Lateral Overgrowth" Jpn. J. Appl. Phys.34. L1432-L1435 (1995)

    • Related Report
      1995 Annual Research Report

URL: 

Published: 1995-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi