| Project/Area Number |
07555189
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 試験 |
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| Research Field |
Physical properties of metals
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| Research Institution | MIYAGI NATIONAL COLLEGE OF THCNOLOGY |
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Principal Investigator |
MATSUURA Makoto MIYAGI NATIONAL COLLEGE OF TECHNOLOGY,LIBERAL ARTS AND SCIENCE,PROFESSOR, 総合科学系理数科, 教授 (40042262)
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| Co-Investigator(Kenkyū-buntansha) |
NOMOTO Toshio MIYAGI NATIONAL COLLEGE OF TECHNOLOGY,LIBERAL ARTS AND SCIENCE,ASSICETANT Prof., 総合科学系理数科, 助教授 (50099769)
SUZUKI Katsuhiko MIYAGI NATIONAL COLLEGE OF TECHNOLOGY,LIBERAL ARTS AND SCIENCE,ASSICETANT Prof., 総合科学系理数科, 助教授 (80187715)
MOMOSE Takeshi MIYAGI NATIONAL COLLEGE OF THECHNOLOGY,ELECTRIC ENGINEERING,PROFESSOR, 電気工学科, 教授 (90006271)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥4,600,000 (Direct Cost: ¥4,600,000)
Fiscal Year 1996: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1995: ¥4,000,000 (Direct Cost: ¥4,000,000)
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| Keywords | HDDR / Hydrogenation / magnetic anisotropy / Nd_2Fe_<14>B / fluorescence XAFS / dilute additives / local structure / 蛍光XAFS / マイクロアロイング / 結晶制御 / スプリング磁石 / 液体急冷 / XAFS |
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| Research Abstract |
The main purpose of this study is to reveal the roles of small amount of additives in the exchange spring magnets. Small additives sometimes drastically reduce grain size of crystallites in the crystallization from amorphous states. Here we have mainly investigated the changes of local structures of small additives by fluorescence XAFS during crystallization from amorphous states and during hydrogenation. It has been found that Ga in Fe_<73>Ga_4Nb_3Si_<11>B_9 moves toward interface of precipitated alpha-Fe at an early stage of crystallization, and then included into alpha-Fe with the crystallization being proceeded. We also studied the local structure changes of Ga and Zr in Nd_<13.6>Fe_<68.2>Co_<10.8>Ga_<1.0>Zr_<0.1>B_<6.9> before and after hydrogenation. Before hydrogenation Ga is included in Nd_2Fe_<14>B and after hydrogenation it moves into alpha-Fe. On the other hand Zr makes selective bonding to hydrogen and forms ZrH_2 after the hydrogenation.
At the present stage how such behaviors of Ga and Zr in HDDR are related with the crystalline memory effects are not yet clear. Further investigations are needed to reveal it.
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