| Project/Area Number |
07555414
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 試験 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
ITO Toshimichi Osaka Univ., Dept.of Electrical Engineering, Associate Professor, 工学部, 助教授 (00183004)
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| Co-Investigator(Kenkyū-buntansha) |
NISHIZAWA Hirotaka Hitachi, Ltd., Device Development Center, Chief Engineer, 主任技師
HATTA Akimitsu Osaka Univ., Dept.of Electrical Engineering, Research Associate, 工学部, 助手 (50243184)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 1996: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | Porous Silicon / Visible Luminescence / Photoluminescence / Time-Resolved Spectrum / Indium Plating |
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| Research Abstract |
Porous Silicon (PS) which yields strong and narrow photoluminescence has been successfully prepared either using a single-stage process where the anodization is carried out under white light illuminations with suitable intensity and period, or using a two-stage process where porous structure is formed by anodization without light illumination at the first stage and is further thinned by light illuminations properly controlled at the second stage. The narrowest width (full width at half maximum) obtained so far is 0.18 eV,which is roughly half as much as those (0.3-0.4 eV) reported for conventionally prepared PS.Furthermore, we have obtained PS specimens showing relatively strong PL whose peak wavelenghts are located in the region below 600nm, where PL intensities strongly decrease for conventionally prepared PS.These are considered to come from homogeneous porous structures formed in the present process used. On the other hand, electrochemical plating of indium into PS layrs has been i
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nvestigated. We have found that indium starts to be plated from PS-substrate Si interfaces and forms particles with specific sizes ranging from several tens to several hundreds of nanometers. The particle size depends on the pore size in PS,indicating a selective In-plating process at relatively large pores. An important finding is that the natural oxidation can be substantially decreased in a PS region where the amount of the plated In is relatively larger, suggesting a possible passivation effect by the plated indium. Finally, the oxidation process of the In-plated PS specimens has been studied. It turned out that a rapid thermal oxidation above 700 C forced the plated indium to grow in size and that the plated indium was converted to amorphous or microcrystalline induim oxide after 30-min furnace oxidation at 500 C.This means that a transparent electrode for PS electroluminescence (EL) devices can be formed in PS layrs by a suitable oxidation of the indium plated in the layrs. Unfortunately, no efficient EL devices have been prepared using In-plated PS at this stage. Less
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