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Micro flow systems for semiconductor monolayr growth process

Research Project

Project/Area Number 07650002
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionTohoku University

Principal Investigator

KURABAYASHI Toru  Tohoku University, Faculty of Engineering, Lecturer, 工学部, 講師 (90195537)

Co-Investigator(Kenkyū-buntansha) ESASHI Masayoshi  Tohoku University, Faculty of Engineering, Professor, 工学部, 教授 (20108468)
MINAMI Kazuyuki  Tohoku University, Faculty of Engineering, Lecturer, 工学部, 講師 (00229759)
Project Period (FY) 1995 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1996: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1995: ¥1,500,000 (Direct Cost: ¥1,500,000)
Keywordsmonolayr growth / micro flow control system / micro valve / corrugated diaphragm / etching stop / Au-Si eutectic bending / bakable / control fine gas flow / シリコンマイクロマシニング / 圧空バルブ / シリコンマイクロマシ-ニング / シリコンアクチュエータ / フローセンサ / 真空センサ
Research Abstract

Bakable micro flow system with microvalve was fabricated using silicon micromachining. This microvalve uses the pneumatic actuators having corrugated diaphragms to get a large displacement of the valve plunger for large flow rate. The corrugated diaphragm has a large deflection compared to a flat diaphragm. The deflection of the diaphragm was measured by the displacement of the microscope which was focused on the diaphragm surface. The expermental results of the deflection agree approximately with the simulated results.
Au-Si eutectic bonding is important for the microvalve fabrication process. We investigated Au-Si eutectic bonding and measured the bonding strength at different Au thickness.The microvalve is anodically bonded to the Kovar alloy block after the Au-Si eutectic bonding. At the beginning the microvalve was designed by using the electrostatic force and the pneumatic force. However, the electro static force control was difficult, we used the pneumatic actuators. The bakable silicon microvalve has been developed by using silicon micromachining technology, the gas flow rate could be controlled from 0.1 sccm to 35 sccm, at 25-120゚C,and the valve had a small leakage of about 0.08 sccm. The microvalve is expected to be applied for advanced semiconductor device fabrication processes.

Report

(3 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • Research Products

    (30 results)

All Other

All Publications (30 results)

  • [Publications] C.Cabuz: "Microphysical Investigations on Mechanical Structures Realized in P^+ Silice" J.Microelectromechanical Systems. 4. 109-118 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa: "Effect of TMG/AsH_3-ratio on GaAs molecular layer growth" J.Vacuum Science Technology. B13. 1024-1029 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] C.Cabuz: "A New Theory on Stress Evolution in P^+ Silicon" 8th Int. Solid State Sensors and Actuators. 67-68 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] D.Y.Sim: "Bakable Silicon Pneumatic Microvalve" 8th Int. Solid State Sensors and Actuators. 280-283 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 西澤 潤一: "GaAsの単分子層成長" 応用物理学会「半導体結晶シンポジウム」予稿隼. 9-12 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] D.Y.Sim: "Pneumatic Microvalve Based on Si Micromachining" T.IEE Japan. 116-E. 56-61 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] D.Y.Sim: "A Bakable Microvalve with a Kovar-Glass-Silicon-Glass Structur" J.Micromech.Microeng.6. 266-271 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa: "Surface Reaction Mechanism in MO-CVD" Applied Surface Science. 92. 89-98 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa: "Surface Reaction of Trimethylgallium on GaAs" J.Vac.Sci.Technol. B14. 136-146 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa: "Reaction mechanisms of mono-molecular layer growth using chemical adsorpti" Applied Surface Science. 106. 11-21 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa: "Monomalecular Layer Epitaxy of GaAs for Ideal Static Induction Transistor" Advanced Materials for Optics and Electronics. 7. 183-193 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Cleopatra Cabuz, Keisuke, Fukatsu, Toru, Kurabayashi and Masayoshi, Esashi: "Microphysical Investigations on Mechanical Structures Realized in P+Silicon" J.Microelectromechanical Systems. 4. 109-118 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa and T.Kurabayashi: "Effect of TMG/As113 retio on GaAs molecular layr groth" Journal of Vacuum Science Technology. B13. 1024-1029 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] C.Cabuz, K.Fukatsu, T.Kurabayashi, K.Minami and M.Esashi: "A New Thecory on Stress Evolution in P+Silicon" The 8th International Conference on Solid State Sensors and Actuators, Sweden. 67-68 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] D.Y.Sim, T.Kurabayashi, and M.Esashi: "Bakable Silicon Pncumatic Microvalve" The 8th International Conference on Solid State Sensors and Actuators, Sweden. 280-283 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa and T.Kurabayashi: "GaAs monolayr growth" Applited physics in Japan "Semiconductor Symposiun" proceeding. 9-12 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] D.Y.Sim, T.Kurabayashi, and M.Esashi: "Pneumatic Microvalve Based on Silicon Micromachining" T.IEE Japan. 116-E,No.2. 56-61 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Dong Y.Sim, T.Kurabayashi, M.Esashi: "A Bakable Microvalve with a Kovar-Glass-Silicon-Gllass Structure" J.Micromech.Microeng.6,2. 266-271 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa H.Sakuraba and T.Kurabayashi: "Surface reaction mechanism in MO-CVD" Applied Surface Science. 92. 89-98 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa H.Sakuraba and T.Kurabayashi: "Surface reaction of trimethylgallium on GaAs" J.Vac.Sci.Technol. B14 (1). 136-146 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Nishizawa and T.Kurabayashi: "Reaction mechanisms of mono-molecular layr growth using chemical absorption" Applied Surface Science. 106. 11-21 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.NISHIZAWA and T.KURABAYASHI: "Monomolecular Layar Epitaxy of GaAs for Ideal Static Induction Transistor" Advanced Materials for Optics and Electronics. vol.7. 183-193 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J. Nishizawa: "Effects of TMG/AsH_3 ratio on GaAs molecular layer growth" J. Vacuum Science & Technology. B13. 1024-1029 (1995)

    • Related Report
      1996 Annual Research Report
  • [Publications] C. Cabuz: "A new Theory on Stress Evolution in pt Silicon" 8th International Conference on Solid-State Sensors and Actuators (Sweden). 67-68 (1995)

    • Related Report
      1996 Annual Research Report
  • [Publications] D. Y. Sim: "Bakable Silicon Pneumatic Microvalue" 8th International Conference on Solid-State Sensors and Actuators (Sweden). 280-283 (1995)

    • Related Report
      1996 Annual Research Report
  • [Publications] J. Nishizawa: "Surface Reaction of Trimethylgallium on GaAs" J. Vacuum Science & Technology. B14. 136-146 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] D. Y. Sim: "Pneumatic Microvalue Based on Silicon Micromaching" T. IEEE Japan. 116-E・2. 56-61 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] D. Y. Sim: "A bakable microvalue with a Kovar-glass-silicon-glass structure" J. Micromech. Microeng.6. 1-6 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] D. Y. Sim: "Bakable silicon pneumatic microvalve" Transducer '95 Eurosensors IX. 1,2. 280-283 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] 西澤潤一: "GaAsの単分子成長機構" 応用物理学会東北支部シンポジウム予稿集. 9-12 (1995)

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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