| Project/Area Number |
07650032
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Nagoya University |
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Principal Investigator |
HORI Masaru NAGOYA UNIVERSITY ASSOCIATE PROFESSOR, 工学部, 助教授 (80242824)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1996: ¥300,000 (Direct Cost: ¥300,000)
Fiscal Year 1995: ¥1,900,000 (Direct Cost: ¥1,900,000)
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| Keywords | RADICAL / PLASMA / ETCHING / FLUOROCARBON / SILICON / CF_2 / INFRARED LASER / ECR / レーザー分光 / 酸化シリコン |
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| Research Abstract |
1. Development of Etching Apparatus Employing Radical Injection Technique
Radical source was newly developed to generate CF_2 radicals selectively by using pyrolysis of HFPO gas.
Radical source was evaluated by infrared laser absorption spectroscopy and so CF_2 radical density was 1x 10^<13>cm^<-3> at 0.67Pa and 900K of the wall of radical source.
Therefore, we have successfully developed the CF^2 radical source.
2. Controlling of Radical Species and Clarification of Radical Reaction Mechanism Employing Radical Injection Technique
The radical source was attached to the ECR etching apparatus and CF_2 radicals were injected into ECR Ar or Ar/H_2 downstream plasma. The fluorocarbon films were analyzed by XPS and FT-IR method.
It was found that CF_2 radical was the important precursor for the formation of fluorocarbon films with irradiation of ions.
In the case of ECR Ar plasma, fluorine-rich films were formed. Onthe other hand, carbon-rich films were formed in ECR Ar/H_2 plasma.
3. High Selectively Etching of SiO_2/Si Employing Radical Injection Technique
SiO_2/Si Etching was performed by CF_2 radical injection into ECR ECR Ar or Ar/H_2 downstream plasma. With-200V of 400kHz rf biases, the etching selectivity was about 3 in Ar plasma with CF_2 radical injection. On the other hand, the selectivity was infinite in Ar/H_2 plasma.
Consequently, we found the high selectively etching of SiO_2/Si was obtained by controlling the CF_2 radicals.
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