| Project/Area Number |
07650039
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | KYUSHU KYORITSU UNIVERSITY |
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Principal Investigator |
SHOJI Fumiya KYUSHU KYORITSU UNIVERSITY Faculty Of Engineering PROFESSOR, 工学部, 教授 (00093419)
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| Co-Investigator(Kenkyū-buntansha) |
USHIROSAKO Toyokazu KYUSHU KYORITSU UNIVERSITY Faculty Of Engineering ASSISTANT, 工学部, 助手
GONDO Yasuo KYUSHU KYORITSU UNIVERSITY Faculty Of Engineering PROFESSOR, 工学部, 教授 (50017852)
後追 豊和 九州共立大学, 工学部, 助手
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 1996: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1995: ¥1,900,000 (Direct Cost: ¥1,900,000)
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| Keywords | HETEROEPITAXY / ION SCATTERING / SILICON / SURFACE AND INTERFACE / THIN FILM / THIN FILM GROWTH / SURFACE ANALYSIS / SURFACESTRUCTURE / Ion Scattering / Surface and Interface / Surface Structure / Surface analysis / イオン蒸着 / イオンビーム分析 / シリコン表面 / エピタキシ- / イオン散乱法 / Bi薄膜成長 / 半導体表面解析 |
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| Research Abstract |
The semiconductor industry is constantly striving for ever smaller device dimensions. Future high-speed electronic devices may be built up from low-dimensional structures involving layrs and lines as little as a few atomic diameters across. Now, it is becoming possible to discuss on mechanisms of epitaxial growth from the microscopic standpoint, because of rapidly developing field of surface analysis techniques. However, a clear explanation has not been made on detail physics of the hetroepitaxy. It is the purpose of this work to systematically investigate how two-dimensional interface phase controls the heteroepitaxial growth.
Three experimental programs were performed in a period of this work. The results obtained are described below.
1, Analysis of Si (100) -2x1 : H surface hydrogen :
By using low-energy recoil ion spectroscopy technique, we have investigated the structure of Si (100) -1x1 : 2H dihydride and Si (100) -2x1 : H monohydride surfaces. Comparing our experimental results wit
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h computer simulations, we conclude that the H-Si bond angle in the Si (100) -2x1 surface is 65-70ﾟ and that in the Si (100) -1x1 : 2H surface is 55-60ﾟ For the dihydride surface, canted dihydride structure is suggested.
2, Analysis of Bi-induced (1x1) structure of the Si (100) surface :
We have carried out the structure analysis of Bi-induced (1x1) surface by using low-energy ion scattering spectroscopy technique. We have shown that the (1x1) surface is induced by Bi atoms with periodicity of bulk-like Si (100) -1x1, however, there are many Bi vacancies in the ordered structure with the (1x1) periodicity.
3, Si heterointerface control by low-energy ion beam deposition and scattering :
We have newly developed low-energy ion beam deposition system which is integrated into analytical facilities of low-energy ion scattering and low-energy electron diffraction to allow characterization of surfaces with or without ion beam deposition. Preliminary experimental measurements are carried out using a Bi ion source. It is confirmed that Bi ion beams can be obtained in the energy range 50-550eV and that hte Bi ion beam deposition proceeds on Si (100) clean surface by in-situ measurement of low-energy ion scattering spectrometry. Less
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