| Project/Area Number |
07650355
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
|
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| Research Institution | CHIBA UNIV |
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Principal Investigator |
OKAMOTO Hiroshi Faculty of Engineering, Chiba University Professor, 工学部, 教授 (90241934)
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| Co-Investigator(Kenkyū-buntansha) |
MATSUSUE Toshio Faculty of Engineering, Chiba University Lecturer, 工学部, 講師 (20209547)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 1996: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1995: ¥1,200,000 (Direct Cost: ¥1,200,000)
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| Keywords | porous Si / visible emission / anodization / in situ PL observation / 間接遷移 / 注入発光 / 発光効率 / その場観察 |
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| Research Abstract |
Porous silicon is attractive because of its visible light emission. Its spectrum, however, is influenced by many unknown factors in the anodization process and the following oxidation process. In situ photoluminescence observation was tried by inserting an optical fiber into the anodization solution and the oxidation solution. Wavelength was short and spectrum was very narrow during the anodization, but after rinsing in the deionized water and then being exposed to the air, red shift and spectrum broadening occurred. Oxidization in HNO3 solution was found to be effective in minimizing both red shift and spectrum broadening.
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