| Project/Area Number |
07650382
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nihon University |
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Principal Investigator |
ITOH Akiyoshi Nihon University, College of Science and Technology, Professor, 理工学部, 教授 (60059962)
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| Co-Investigator(Kenkyū-buntansha) |
KAWAGOE Takeshi Nihon University, College of Science and Technology, Research Associate, 理工学部, 助手 (00195067)
NAKAGAWA Katsuji Nihon University, College of Science and Technology, Associate Professor, 理工学部, 助教授 (20221442)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1996: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1995: ¥1,300,000 (Direct Cost: ¥1,300,000)
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| Keywords | SUPER LATTICES / STRESS / MOLECULAR DYNAMICS / SIMULATION / FILM GROWTH |
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| Research Abstract |
It is an important issue to clarify microstructures and film growth process of super lattices. The purposes of this research are as follows :
1) Clarifying the process and the kinetics of film growth of super lattices by using an in-situ measurement of the internal stress during fabrication.
2) Clarifying the process and the kinetics of film growth of super lattices by the morecular dynamics simulations.
In 1995, the dependence of both the surface morphology and the reconstruction on incident atom energy is simulated with the molecular dynamics method by using the Morse potential as one of the pair wise potentials. The simulated results are well coincident with the experimental results for the films fabricated by sputtering.
In 1996, for the purpose of clearing the difference in the simulated process between the cases by using the embedded atom potential (EAM potential) (many-body potential) and by using the Morse potential (pair wise potential), simulations have been performed for Ni/Pd super lattices. The results are as follows :
1) The film growth process and the structure of the mixing of different atoms at the boundary for the case of using EAM potential is as same as the case of using the Morse potential.
2) The amount of stress in Ni layr simulated by using EAM potential is different from the result obtained by using Morse potential. The stress in Ni layr simulated with EAM potential is in coincident with experimental data for the film fabricated by sputtering.
3) It is observed in the results obtained by using EAM potential that the stress in the mixed layr is not uniform and is localized at around the defects of the lattice.
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