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Investigation of electron divices for hard atmosphere using heteroepitaxial diamond layr

Research Project

Project/Area Number 07650384
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionWaseda University

Principal Investigator

KAWARADA Hiroshi  Waseda, University, School of Sci.& Eng., Professor, 理工学部, 教授 (90161380)

Project Period (FY) 1995 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1996: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1995: ¥1,400,000 (Direct Cost: ¥1,400,000)
Keywordsdiamond / heteroepitaxial growth / MESFET / MOSFET / electron device for hard atomosphere / logic circuits / microwave plasma / Silicon carbide
Research Abstract

1) Development of large area microwave plasma CVD using coaxial waveguide :
Using coaxial waveguide new type of microwave plasma CVD has been developed. The following results have been obtained. a) Enlargement of plasma, b) controllability of ion energy (20-30 eV) necessary for diamond nucleation, and c) stability of plasma above 200 Torr where the improvement of crystallinity has been expected.
2) Observation of initial growth stage of heteroepitaxial diamond :
Using high resolution SEM the surface structure of SiC necessary for diamond nucleation has been investigated. Based on the observation the high density of nucleation leading to smooth heteroepitaxial growth has been realized as a result.
3) MESFET fabrication on the heteroepitaxial diamond layrs :
Metal semiconductor field effect transistors (MESFETs) with 5mum gate length have been fabricated on the heteroepitaxial diamond layrs. The performance of the devices are comparable to those on homoepitaxial diamond surfaces. The obtained transconductance (gm) are 7-8mS/mm, which is the highest in diamond heteroepitaxial layr. It reflect the high hole mobility of the heteroepitaxial layr.
4) NAND,NOR,R-S flip-flop circuits and MOSFET :
On homoepitaxial layr, NAND,NOR,and R-S flip-flop circuits have been operated. The MOSFETs with the gm of 15mS/mm comparable to Si n-MOSFET have been developed and operated up to 350゚C.This result is the most advanced one in diamond FETs

Report

(3 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • Research Products

    (29 results)

All Other

All Publications (29 results)

  • [Publications] T.Suesada,N.Nakamura H.Nagasawa,and H.Kawarada: "Initial Growth of Hereroepitaxial Diamond on Si (001) Substrates via β-SiC Buffer Layer" Jpn. J. Appl. Phys.34巻9A号. 4898-4904 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M. Itoh and H. Kawarada: "Fabrication and Characterization of Metal-Semicondactor Field-Effect Transistor Utilizing Diamond Surface-Conductive Layer" Jpn. J. Appl. Phys.34巻9A号. 4677-4681 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Kawarada,M.Itoh,and A.Hokazono: "Electrically Isolated Metal-Semiconductor Field Effect Transistors and Logic Circuits on Homoepitaxial Diamonds" Jpn. J. Appl. Phys.35巻9B. L1165-L1168 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Kawarada: "Hydrogen-terminated Diamond Surfaces and Interfaces" Surface Science Reports. 26巻7号. 205-260 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Mizuochi and H.Kawarada: "Surface Characterization of Smooth Hereroepitaxial Diamond Layers on β-Sic (001)" Diam. Rel. Mat.(印刷中). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Hokazono and H.Kawarada: "Enhancement/Depletion MESFETs of Diamond and Their Logic Circcuits" Diam. Rel. Mat.(印刷中). (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 川原田洋、末定剛、水落祐二: "β-SiCをバッファー層としたSi(001)基板上でのダイヤモンド" 日本結晶成長学会誌. 22. 334-339 (1995)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] N.Jin.H.Sakai.K.Tsugawa and H.Kawarada: "Device modeling of diamond enhancement-mode MESFET utilizing p-type surface semiconductive layers" Proc. of 6th Int. Conf. on Silicon Carbide and Related Materials. (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Ioth,A.Hokazono,H.Noda and H.Kawarada: "Fabrication of Logical Circuits Using Diamond Metal-Semiconductor Field-Effect Transistor" Proc. of 6th Int. Conf. on Silicon Carbide and Related Materials. (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Sato,S.Yamashita and H.Kawarada: "Scanning Tunneling Microscopy and Spectroscopy for studying Hydrogen-Terminated Homoepitaxial Diamond Surfaces" Proc. of 6th Int. Conf. on Silicon Carbide and Related Materials. (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] J.Imamura,T.Tsutsumi,T.Murakami and H.Kawarada: "Observation of dominant free exciton recombination from synthesized diamond by cathodoluminescence measurement" Proc. of 6th Int. Conf. on Silicon Carbide and Related Materials. (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Suesada, N.Nakamura, H.Nagasawa, and H.Kawarada: "Initial Growth of Heteroepitaxial Diamond on Si (001) Substrates via beta-SiC Buffer Layr" Jpn.J.Appl.Phys.34 (9A). 4898-4904 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Itoh and H.Kawarada: "Fabrication and Characterization of Metal-Semiconductor Field-Effect Transistor Utilizing Diamond Surface-Conductive Layr" Jpn.J.Appl.Phys.34 (9A). 4677-4681 (1995)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Kawarada, M.Itoh, and A.Hokazono: "Electrically Isolated Metal-Semiconductor Field Effect Transistors and Logic Circuits on Homoepitaxial Diamonds" Jpn.J.Appl.Phys.35 (9B). L1165-L1168 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Kawarada: "Hydrogen-Terminated Diamond Surfaces and Interfaces" Surf.Sci.Rep.26 (7). 205-260 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Mizuochi, H.Nagasawa, and H.Kawarada: "Surface Characterization of Smooth Heteropitaxial Diamond Layrs" Diam.Rel.Mat.(in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] A.Hokazono, T.Ishikura, K.Nakamura, S.Yamashita, and H.Kawarada: "Enhacement/Depletion MeSFETs of Diamond and Their Logic Circuits" Diam.Rel.Mat. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] T.Suesada,N.Nakamura,H.Nagasawa,and H.Kawarada: "Initial Grocoth of Heteroepitaxial Diamond on Si (001) Substrates via β-SiC Buffer Layer" Jpn.J.Appl.Phys.34巻9A号. 4898-4904 (1995)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Itoh and H.Kawarada: "Fabrication and Characterization of Metal-Semiconduitor Field-Effect Transistor Urilizing Diamond Surface-Conductive Layer" Jpn.J.Appl.Phys.34巻9A. 4677-4681 (1995)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Kawarada,M.Itoh,and A.Hokazono: "Electrically Isolated Metal-Semiconductor Field Effect Transistors and Logic Circuits on Homoepitaxial Diamonds" Jpn.J.Appl.Phys.35巻9B. L1165-L1168 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Kawarada: "Hydrogen-terminated Diamond Surfaces and Interfaces" Sarface Science Reports. 26巻7号. 205-260 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Mizuochi and H.Kawarada: "Surface Characterization of Smooth Heteroepitaxial Diamond Layers on β-SiC(001)" Diam.Rel.Mat.(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Hokazono and H.Kawarada: "Enhancement / Depletion MESFETS of Diamond and their Logic Circuits" Diam.Rel.Mat.(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] 川原田 洋、末定 剛、水落 祐二: "β-SiCをバッファー層としたSi(001)基板上でのダイヤモンド" 日本結晶成長学会誌. 22. 334-339 (1995)

    • Related Report
      1995 Annual Research Report
  • [Publications] H. Kawarada, M. Itoh: "Electrically isolated metal-semiconductor field effect transistors and the logic circuits on homoepitaxial diamonds" Jpn. J. Applied physics. 35. (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] N. Jin, H. Sakai, K. Tsugawa and H. Kawarada: "Device modeling of diamond enhancement-mode MESFET utilizing p-type surface semiconductive layers" Proc. of 6th Int. Conf. on Silicon Carbide and Related Materials. (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] M. Itoh, A. Hokazono, H. Noda and H. Kawarada: "Fabrication of Logical Circuits Using Diamond Metal-Semiconductor Field-Effect Transistor" Proc. of 6th Int. Conf. on Silicon Carbide and Related Materials. (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] A. Sato, S. Yamashita and H. Kawarada: "Scanning Tunneling Microscopy and Spectroscopy for studying Hydrogen-Terminated Homoepitaxial Diamond Surfaces" Proc. of 6th Int. Conf. on Silicon Carbide and Related Materials. (1996)

    • Related Report
      1995 Annual Research Report
  • [Publications] J. Imamura, T. Tsutsumi, T. Murakami and H. Kawarada: "Observation of dominant free exciton recombination from synthesized diamond by cathodoluminescence measurement" Proc. of 6th Int. Conf. on Silicon Carbide and Related Materials. (1996)

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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