| Project/Area Number |
07650389
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Tohoku University |
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Principal Investigator |
SHIMAWAKI Hidetaka Research Institute of Electrical Communication, Tohoku University, Research Associate, 電気通信研究所, 助手 (80241587)
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| Co-Investigator(Kenkyū-buntansha) |
SHIHO Makoto Japan Atomic Energy Research Institute, Naka Fusion Research Establishment, Proj, 那珂研究所, 主任研究員
YOKOO Kuniyoshi Research Institute of Electrical Communication, Tohoku University, Professor, 電気通信研究所, 教授 (60005428)
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| Project Period (FY) |
1995 – 1996
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| Project Status |
Completed (Fiscal Year 1996)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1996: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1995: ¥1,800,000 (Direct Cost: ¥1,800,000)
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| Keywords | cold cathode / field emission / electronbeam / electro-optics / vacuum microelectronics |
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| Research Abstract |
Si field emitter is a promising candidate for electron sources in vacuum microelectronics. The current control and the stabilization in the field emission of gated emitter arrays (FEAs) are the highest demand for applications to a flat panel display and other beam devices. The beam focusing technique, additionally, might be necessary for a high quality microbeam. By fabricating FEA monolithically with FET of TFT,the emission current will be controlled and stabilized by applying a few volts on the gate of FET of TFT.We proposed and fabricated a monolithic emitter with Si-FEA and JFET.The controllability and the stability of the emission current from Si-FEA were significantly improved by the monolithic emitter. For the development of a high brightness microbeam, we fabricated a new FEA structure with an in-plane focusing electrode which surrounds an individual gated emitter or a block of gated emitter array. Experimental results showed that the divergence of emitted electron was well focused by decreasing the focusing gate voltage.
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