| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1996: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1995: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Research Abstract |
Removal of phophorus is one of the major problems on the purification of molten silicon for solar cell. The Gibbs energy change of phosphorus dissolution into molten silicon was determined in the temperature range from 1723 to 1848 K by equilibrating a molten silicon-phosphorus alloy in a controlled phosphorus partial pressue and is expressed by the following equations.
1/(P_2(g)=P__-(mass pct, in Si)
DELTAGﾟ=-139,000((]SY.+-。[)2,000)+43.4((]SY.+-。[)10.1T)(J/mol)
Possibility of removing phosphorus from silicon melts by vacuum treatment and the accompanying yield of silicon during the refining process are discussed.
Titanium and iron in silicon are known as harmful "life time killer" impurities which shorten the life time of excited carriers in silicon solar cell and disturb power generation. Therefore, the removal of titanium and iron is one of the most important topics for the production of solar grade silicon.
Thermodynamic properties of titanium and iron in molten silicon were determined at 1723K by equilibrating molten silicon-titanium alloys or molten silicon-iron alloys with molten lead, which has a limited mutual solubility for both alloys. The activity coefficients of infinite dilution, self-interaction coefficients of titanium and iron in molten silicon, and the Gibbs energy change of mixing for silicon-titanium and silicon-iron at 1723K relative to pure liquid silicon, titanium, and iron, were determined.
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