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Control of the anisotropy in the formatin of silver precipitates in Ag-Cl containing glass

Research Project

Project/Area Number 07805033
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTOKYO METROPOLITAN UNIVERSITY

Principal Investigator

NISHIKAWA Hiroyuki  Tokyo Metropolitan University, Faculty of Engineering, Department of Electrical Engineering, Research Associate, 工学部・電気工学科, 助手 (40247226)

Project Period (FY) 1995 – 1996
Project Status Completed (Fiscal Year 1996)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1996: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1995: ¥1,400,000 (Direct Cost: ¥1,400,000)
Keywordsprecipitates / anisotropy / optical fibers / silica glass / electron spin resunance / photo luminessence / excimer laser / undulator / 偏光 / ガラス / 光化学 / アンジュレータ光
Research Abstract

During the course of the present research on the optically-induced anisotropy in the precipitates of glass, germanium-doped silica glass for optical fibers was found to be highly photosensitive against UV laser irradiation. Especially, the photosensitivity was significantily enhanced by a high-pressure hydrogen treatment. Thus, emphasis has been placed on the photosensitivity of germanuium-doped silica by means of the measurements of optical absorption in UV regions, photoluminescence (PL) , and electron spin resonance (ESR) .
Polarized light with an energy of 36 eV from an undulator installed at BL 3A1 line of UVSOR was illuminated onto the germanium-doped silica glass. Photoluminescence and ESR measurements were carried out on the sample. In order to monitor photochemical reactions induced by light illumination, PL bands at 3.1 and 4.2 eV were measured. The decay of the PL follows a stretched exponential function, suggesting that the reaction occurs at the site of oxygen-deficient states in the germanium doped silica. The ESR of the germanium E'centers observed after the light illumination exhibit no angular dependence against the applied magnetic field.
It is found that the formation of paramagnetic centers involves nonradiative relaxation of electron-hole pairs created by two-photon absorption of a KrF excimer laser. Refractive index changes induced by KrF laser illumination were investigated by the measurements of a Bragg reflection from a grating formed by illumination through a phase mask. The refractive index change was correlated with the formation of UV absorption bands. It is also found that high-dose gamma irradiation can produce clusters of Si in silica glass, which exhibit photoluminescene in the visible regions.

Report

(3 results)
  • 1996 Annual Research Report   Final Research Report Summary
  • 1995 Annual Research Report
  • Research Products

    (19 results)

All Other

All Publications (19 results)

  • [Publications] M.Fujimaki,K.Yagi,Y.Ohki,H.Nishikawa,K.Awazu: "Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser" Physical Review B. Vol.53,No.15. 9859-9862 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 大木義路,石井啓介,薛光洙,西川宏之: "シリコン酸化膜中の点欠陥の新しい検出法" 電気学会論文誌A. Vol.116,No.5. 387-391 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 石井啓介,薛光洙,大木義路,西川宏之: "発光減衰曲線の解析におけるSiO2の微視的構造の乱雑さの評価" 電気学会論文誌A. Vol.116,No.10. 881-885 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] 西川宏之,渡辺英紀,伊藤大佐,大木義路,: "エキシマレーザ,γ線,および機械的応力による非晶質SiO2の常磁性中心の生成機構" 電気学会論文誌A. Vol.116,No.12. 1129-1137 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Nishikawa,E.Watanabe,D.Ito,Y.Sakurai,K.Nagasawa,Y.Ohki: "Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2" Journal of Applied Physics. Vol.80,No.6. 3513-3517 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Fujimaki,Y.Ohki,H.Nishikawa: "Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence" Journal of Applied Physics. Vol.81,No.3. 1042-1046 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Fujimaki, K.Yagi, Y.Ohki, H.Nishikawa, and K.Awazu: "Laser-power dependence of absorption changes in Gedoped SiO2 glass induced by a KrF excimer laser" Physical Review B. Vol. 53, No. 15. 9859-9862 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] Y.Ohki, K.lshii, K.S.Seol, and H.Nishikawa: "A New Detection Method of Point Defects in Sillcon Dioxide Thin Films" Trans. of IEE Japan. Vol. 116-A,No. 5. 387-391 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] K.Ishii, K.S.Seol, Y.Ohki, and H.Nishikawa: "Evaluation of Microscopic Structural Randomness in SiO2 Through Analysis of Decay Profile of Photoluminescence" Trans. of IEE Japan. Vol. 116-A,No. 10. 881-885 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Nishikawa, E.Watanabe, D.Ito, Y.Ohki: "The formation mechanisms of paramagnetic defect centers induced by excimer lasers, gamma rays, and mechanical fracturing in amorphous SiO2" Trans.of IEE Japan. Vol. 116-A,No. 12. 1129-1137 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] H.Nishikawa, E.Watanabe, D.Ito, Y.Sakurai, K.Nagasawa, and Y.Ohki: "Visible photoluminescence from Si clusters in gamma-irradiated amorphous SiO2" Journal of Applied Physics. Vol. 180, No. 6. 3513-3517 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Fujimaki, Y.Ohki, and H.Nishikawa: "Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence" Journal of Applied Physics. Vol. 81, No. 3. 1042-1046 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1996 Final Research Report Summary
  • [Publications] M.Fujimaki,K.Yagi,Y.Ohki,H.Nishikawa,K.Awazu: "Laser-power dependence of absorption changes in Ge-doped SiO2 glass induced by a KrF excimer laser" Physical Review B. Vol.53,No.15. 9859-9862 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 大木義路,石井啓介,薛光洙,西川宏之: "シリコン酸化膜中の点欠陥の新しい検出法" 電気学会論文誌A. Vol.116,No.5. 387-391 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 石井啓介,薛光洙,大木義路,西川宏之: "発光減衰曲線の解析におけるSiO2の微視的構造の乱雑さの評価" 電気学会論文誌A. Vol.116,No.10. 881-885 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 西川宏之,渡辺英紀,伊藤大佐,大木義路: "エキシマレーザ,γ線,および機械的応力による非晶質SiO2の常磁性中心の生成機構" 電気学会論文誌A. Vol.116,No.12. 1129-1137 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Nishikawa,E.Watanabe,D.Ito,Y.Sakurai,K.Nagasawa,Y.Ohki: "Visible photoluminescence from Si clusters in γ-irradiated amorphous SiO2" Journal of Applied Physics. Vol.80,No.6. 3513-3517 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Fujimaki,Y.Ohki,H.Nishikawa: "Energy states of Ge-doped SiO2 glass estimated through absorption and photoluminescence" Journal of Applied Physics. Vol.81,No.3. 1042-1046 (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] H.Nishikawa and Y.Ohki: "Paramagnetic Defect Centers Induced by Excimer Lasere,γ rays annd Mechanical Fracturing in Amorphous SiO_2" Defect and Diffusion Forum. 123-124. 123-134 (1995)

    • Related Report
      1995 Annual Research Report

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Published: 1995-04-01   Modified: 2016-04-21  

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