| Project/Area Number |
08247101
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
HASEGAWA Hideki Hokkaido Univ., Grad.School of Eng., Pro., 大学院・工学研究科, 教授 (60001781)
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| Co-Investigator(Kenkyū-buntansha) |
SAWAKI Nobuhiko Nagoya Univ., Grad. School of Eng., Pro.., 工学研究科, 教授 (70023330)
KOMA Atsushi Univ. of Tokyo, Grad.School of Sci., Pro, 理学系研究科, 教授 (00010950)
IWAMI Motohiro Okayama Univ., Fuclty of Science, Pro., 理学部, 教授 (80029123)
SUGANO Takuo Toyo Univ., Faculty of Eng., Pro.., 工学部, 教授 (50010707)
YASUDA Yukio Nagoya Univ., Grad.School of Eng., Pro.., 工学研究科, 教授 (60126951)
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| Project Period (FY) |
1996 – 1999
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| Project Status |
Completed (Fiscal Year 2000)
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| Budget Amount *help |
¥223,900,000 (Direct Cost: ¥223,900,000)
Fiscal Year 1999: ¥29,000,000 (Direct Cost: ¥29,000,000)
Fiscal Year 1998: ¥24,600,000 (Direct Cost: ¥24,600,000)
Fiscal Year 1997: ¥44,500,000 (Direct Cost: ¥44,500,000)
Fiscal Year 1996: ¥125,800,000 (Direct Cost: ¥125,800,000)
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| Keywords | Single electron devices / nanostructure / surfaces and interfaces / tunnel barrier / quantum dot / quantum devices / atomic-scale control / high-density intgration |
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| Research Abstract |
The pupose of this research was to control surfaces and interfaces of nanostructures in an atomic scale and its application to the device processing techniques for fabricating and integrating novel single electron devices. The main results are listed below.
(l) Novel GaAs- and InGaAs-based single electron transistors having Schottky in-plane and wrap gates were proposed and fabricated. They operated at high temperatures and achieved the voltage gain greater than unity. Furthermore, small-scale integrated circuits such as logic inverter circuits and binary decision diagram (BDD) circuits were stuccessfully fabricated.
(2) Variotus types of Si-based quantum structures and devices were fabricated and characterized. Coulomb staircase and single electron transport through nano-crystal Si dots were observed at room temprature. In addition, quantized conductance was seen for the first time in vertical-type Si transistor with a 20-nm channel. Coulomb blockade phenomena were found in a narrow Si channel where a hopping transport is dominant. A novel structure for single electron devices was proposed on the basis of asymmetric tunneling barriers.
(3) Surface properties of SiC and GaSe were investigated in an atomic scale. Formation processes of metal particles with nanometer sizes on the reconstructed SiC surfaces were clarified. Furthermore, a novel process for formtion of GaAs quantum dots on the GaSe-terminated (111) Si surface was realized.
(4) Tunneling time and propagation process of wave packet in quantun dots were theoretically investigated.
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