単電子デバイスとその高密度集積化

• Project/Area Number: 08247102
• Research Category: Grant-in-Aid for Scientific Research on Priority Areas (A)
• Allocation Type: Single-year Grants
• Research Institution: Hokkaido University
• Principal Investigator: 長谷川 英機 北海道大学, 大学院・工学研究科, 教授 (60001781)
• Co-Investigator(Kenkyū-buntansha): 川辺 光央 筑波大学, 物理工学系, 教授 (80029446) ; 榊 裕之 東京大学, 生産技術研究所, 教授 (90013226) ; 川村 清 慶應義塾大学, 理工学部, 教授 (00011619) ; 難波 進 長崎総合科学大学, 工学部, 教授 (70029370) ; 菅野 卓雄 東洋大学, 教授 (50010707)
• Project Period (FY): 1996 – 2000
• Project Status: Completed (Fiscal Year 2000)
• Budget Amount: ¥20,200,000 (Direct Cost: ¥20,200,000); Fiscal Year 2000: ¥3,000,000 (Direct Cost: ¥3,000,000); Fiscal Year 1999: ¥5,000,000 (Direct Cost: ¥5,000,000); Fiscal Year 1998: ¥3,700,000 (Direct Cost: ¥3,700,000); Fiscal Year 1997: ¥4,200,000 (Direct Cost: ¥4,200,000); Fiscal Year 1996: ¥4,300,000 (Direct Cost: ¥4,300,000)
• Keywords: 単電子デバイス / ナノ構造 / 表面・界面 / トンネル障壁 / 量子ドット / 量子デバイス / 量子コンピューティング / 高密度集積化 / 原子スケール制御 / 集積化

Research Abstract

本研究は平成8-11年度にわたって設定された特定領域研究「単電子デバイスとその高密度集積化」に関して、総括班を構成し、本特定領域研究の成果のとりまとめを行うことを目的とした。本特定領域研究は、A01)単電子輸送と単電子ナノ構造形成の物性論的基礎、A02)ナノ構造の表面・界面の制御と単電子トンネル障壁の最適化、A03)単電子デバイスの創出とその回路・アーキテクチュアの検討、A04)単電子デバイスの高密度集積化のための新技術の開拓次、の4つの主要研究項目を設定し、厳選された計画研究班と特色ある公募研究者によって研究を推進してきた。平成12年度は、これらの主要研究項目を中心に、本特定領域研究を総括し、その成果の取りまとめを行った。
(1)本特定領域研究で得られた研究成果を、広く国内外にアピールするために、研究成果発表会を、国際シンポジウム"2000 International Symposium on Formation,Physics and Device Application of Quantum Dot Structures(QDS2000)"(量子ドット構造の形成、物理とデバイス応用に関する国際シンポジウム)として、平成12年9月10日-14日に札幌市(北海道大学学術交流会館)にて開催した。外国人研究者26人を含め146人が参加し、発表論文総数は108編であった。また、会議のプロシーディングスをJapanese Journal of Applied Physics誌の特集号(平成13年3月号)として出版した。
(2)各班の研究代表者が中心となって、A01〜A04の主要研究項目ごとに研究成果・研究業績等の取りまとめを行った。
(3)(2)の結果に基づいて、本特定領域研究に参加した班員全員の研究成果を取りまとめ、本特定領域研究の総括を含めた「研究成果報告書」を作成した。

Research Products

• [Publications] H.Hasegawa: "Unpinning of Fermi levcl in nanometer-sized Schottky contacts on GaAs and InP"Applied Surface Science. 166. 92-96 (2000)
• [Publications] H.Takahashi: "In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer"Applied Surface Science. 166. 526-531 (2000)
• [Publications] H.Fujikura: "Formation of device-oriented InGaAs coupled quantum structures by selective MBE growth on patterned InP substrates"Physica E. 7. 864-869 (2000)
• [Publications] C.Jiang: "Vertical barrier layer formation during selective MBE growth of InGaAs ridge quantum wires on InP patterned substates"Physica E. 7. 902-906 (2000)
• [Publications] H.Hasegawa: "Prospects and Key Issues for Compound Semiconductor Quantum Devices"Tehcnical Report of IEICE. 51. 43-48 (2000)
• [Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. 53. 29-36 (2000)
• [Publications] N.Negoro: "Scanning tunneling microscopy and spectroscopy study of ultrathin Si interface control layers grown on (001)GaAs for surface passivation"Applied Surface Science. 159/160. 292-300 (2000)
• [Publications] S.Anantathanasarn: "Surface passivation of GaAs by ultra-thin cubic GaN layer"Applied Surface Science. 159/160. 456-461 (2000)
• [Publications] T.Shiozawa: "Correlation between interface state properties and electron transport at ultrathin insulator/Si interfaces"Applied Surface Science. 159/160. 98-103 (2000)
• [Publications] H.Hasegawa: "MBE growth and applications of silicon interface control layers"Thin Solid Films. 367. 58-67 (2000)
• [Publications] H.Hasegawa: "Effects of gap states on scanning tunneling spectra observed on (110)-and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular beam epitaxy"Journal of Vacuum Science & Technology B. 18. 2100-2108 (2000)
• [Publications] M.Iwaya: "Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal of Applied Physics. 39. 4651-4652 (2000)
• [Publications] H.Fujikura: "Electrochemical Formation of Uniform and Straight Nano-Pore Arrays on (001) InP Surfaces and Their Photoluminescence Characterizations"Japanese Journal of Applied Physics. 39. 4616-4620 (2000)
• [Publications] T.Yoshida: "Ultrahigh-Vacuum Contactless Capacitance-Voltage Characterization of Hydrogen-Terminated-Free Silicon Surfaces"Japanese Journal of Applied Physics. 39. 4504-4508 (2000)
• [Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process"Japanese Joumal of Applied Physics. 39. 4609-4615 (2000)
• [Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP Metal-Insulator-Semiconductor FETs Having an Ultra Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39. 2439-2443 (2000)
• [Publications] S.Ootomo: "Nitridation of GaP (100) Surfaces by rf Nitrogen Radicals and by Electron Cyclotron Resonance Nitrogen Plasma"Japanese Journal of Applied Physics. 39. 2407-2413 (2000)
• [Publications] T.Muranaka: "Selective MBE Growth of InGaAs Quantum Wire-Dot Coupled Structures with Controlled Double-Barrier Potential Profiles"IOP conference seriess. 166. 187-190 (2000)
• [Publications] S.Kasai: "GaAs Quantum Wire Transistors and Single Electron Transistors using Schottky Wrap Gates for Quantum Integrated Circuits"IOP conference series. 166. 219-222 (2000)
• [Publications] T.Muranaka: "Origing of Non-Uniformity in MBE Grown Nanometer-Sized InGaAs Ridge Quantum Wires and Its Removal by Atomic Hydrogen-Assisted Cleaning"Thin Solid Films. 380. 189-191 (2000)
• [Publications] R.Nakasaki: "Insulator-GaN interface structures formed by plasma-assisted chemical vapor deposition"Physica E. 7. 953-957 (2000)
• [Publications] H.Hasegawa: "Fermi Level Pinning and Schottky Barrier Height Control at Metal-Semiconductor Interfaces of InP and Related Materials"Japanese Journal of Applied Physics. 38. 1098-1102 (1999)
• [Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates"Japanese Journal of Applied Physics. 38. 1071-1074 (1999)
• [Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity"Japanese Journal of Applied Physics. 38. 1067-1070 (1999)
• [Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP"Japanese Journal of Applied Physics. 38. 1115-1118 (1999)
• [Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes"Japanese Journal of Applied Physics. 38. 1147-1152 (1999)
• [Publications] T.Sato: "The Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process"Japanese Journal of Applied Physics. 38. 1103-1106 (1999)
• [Publications] H.Takahashi: "X-ray Photoelectron Spectroscopy and Ultrahigh Vacuum Contactless Capacitance-Voltage Characterization of Novel Oxide-Free InP Passivation Process Using a Silicon Surface Quantum Well"Japanese Journal of Applied Physics. 38. 1128-1132 (1999)
• [Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates"Japanese Journal of Applied Physics. 38. 410-414 (1999)
• [Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Trasistors"IOP conference series. 162. 409-414 (1999)
• [Publications] N.Ono: "Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires"IOP conference series. 162. 385-390 (1999)
• [Publications] C.Kaneshiro: "Realization of Strongly Metal-Dependent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process"IOP conference series. 162(in press). (1999)
• [Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots Groen by Selective MBE"Microelectronic Engineering. 47. 201-203 (1999)
• [Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates"Microelectronic Engineering. 285-287 (1999)
• [Publications] H.Sai: "Growth of Device Quality InGaP/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine"Solid State Electron. 1541-1546 (1999)
• [Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs"Japanese Journal of Applied Physics. 38. 824-831 (1999)
• [Publications] H.Sai: "Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine"Japanese Journal of Applied Physics. 38. 151-158 (1999)
• [Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN"Japanese Journal of Applied Physics. 38. 2637-2639 (1999)
• [Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition"Japanese Journal of Applied Physics. 38. 2448-2452 (1999)
• [Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properties of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements"Japanese Journal of Applied Physics. 38. 2349-2354 (1999)
• [Publications] M.Mutoh: "Effects of Initial Surface Reconstruction on Silicon Interface Control Layer Based Passivation of(001)GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System"Japanese Journal of Applied Physics. 38. 2538-2543 (1999)
• [Publications] H.Takahashi: "In-situ Characterization Technique of Compound Semiconductor Heterostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement"Solid-State Electronics. 43. 1561-1570 (1999)
• [Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications"Solid-State Electronics. 43. 1483-1488 (1999)
• [Publications] A.Hamamatsu: "A.Hamamatsu, C.Kaneshiro, H.Fujikura and H.Hasegawa, "Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCI"Journal of Electroanalytical Chemistry. 223-229 (1999)
• [Publications] B.Adamowicz: "Electronic Properties of Al_xGa_<1-x>As Surface Passivation by Ultrathin Silicon Interface Control Layer"Applied Surface Science. 141. 326-332 (1999)
• [Publications] B.Adamowicz: "Computer simulation of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum"Vacuum. 54. 137-177 (1999)
• [Publications] H.Hasegawa: "Molectular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires"MRS Bulletin. 24. 25-30 (1999)
• [Publications] H.Hasegawa: "Properties of nanometer-sized metal-semiconductor interfaces of GaAs and InP formed by an in situ electrochemical process"Journal of Vacuum Science and Techonolgy. B17. 1856-1866 (1999)
• [Publications] H.Okada: "Characterization of GaAs Schottky in-plane gate quantum wire transistors fow switching of quantized conductance"Physica B. 272. 123-126 (1999)
• [Publications] S.kasai: "Conductance oscillation characteristics of GaAs Schottky wrap-gate single-electron transistors"Physica B. 272. 88-91 (1999)
• [Publications] H.Fujikura: "Selective growth of quantum wire-dot couple structures with novel high index facets for InGaAs single electron transistor arrays"Microelectronics Journal. 30. 397-401 (1999)
• [Publications] T.Tanaka: "A novel GaAs flip-chip power MODFET with high gain and efficiency"Solid-State Electronics. 43. 1405-1411 (1999)
• [Publications] D.Ueda: "Implementation of GaAs monolithic microwave integrated circuits with on-chip BST capacitors"Journal of Electroceramics. 3. 105-113 (1999)
• [Publications] H.Hasegawa: "Advanced mesoscopic device concepts and technology"Microelectronic Engineering. (in press). (2000)
• [Publications] H.Hasegawa: "MBE Growth and Applications of Silicon Interface Control Layers"Thin Solid Films. (in press). (2000)
• [Publications] H.Hasegawa: "Unpinning of Fermi Level in Nanometer-Sized Schottky Contacts on GaAs and InP"Applies Surface Science. (in press). (2000)
• [Publications] H.Fujikura: "Formation of Device-Oriented InGaAs Coupled Quantum Structures by Selective MBE Growth on Patterned InP Substrates"Physica E. (in press). (2000)
• [Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in situ Electrochemical Process"Japanese Journal Applies Physics. (in press). (2000)
• [Publications] M.Iwaya: "Chemical can Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors"Japanese Journal Applies Physics. (in press). (2000)
• [Publications] S.kasai: "GaAs quantum wire transistor and single electron transistors using Schottky wrap gates for quantum integrated circuits"IOP conference series. (in press). (2000)
• [Publications] T.Muranaka: "Selective MBE growth of InGaAs quantum wire-dot coupled structures with controlled double-barrier potential profiles"IOP conference series. (in press). (2000)
• [Publications] N.Negoro: "Scanning Tunneling Microscopy and Spectroscopy Study of Ultrathin Si Interface Control Layers Grown on (001) GaAs for Surface Passivation"Applied Surface Science. (in press). (2000)
• [Publications] S.Ootomo: "Nitridation of GaP(100)Surfaces by Rf Nitrogen Radicals and by ECR Nitrogen Plasma"Japanese Journal of Applied Physics. 39(in press). (2000)
• [Publications] M.Yamada: "Fabrication and Characterization of Novel Oxide-Free InP MISFET Having and Ultra-Narrow Si Surface Quantum Well"Japanese Journal of Applied Physics. 39(in press). (2000)
• [Publications] R.Nakasaki: "Insulator-GaN Interface Structures Formed by Plasma-Assisted Chemical Vapor Deposition"Physica E. (in press). (2000)
• [Publications] C.Jiang: "Vertical Barrier Layer Formation during Selective MBE Growth of InGaAs Ridge Quantum Wires on InP Patterned Substrates"Physica E. (in press). (2000)
• [Publications] S.Anantathanasarn: "Surface Passivation of GaAs by Ultra-thin Cubic GaN Layer"Applied Surface Science. (in press). (2000)
• [Publications] K.Kawamura: "Theory of artificial atoms and molecules using semiconductor quantum dots"Jpn.J.Appl.Phys.. 38. 366-370 (1999)
• [Publications] H.Sakaki: "Modelling inter-dot Coulomb interaction effects in field effect transistors with an embedded quantum dot layer"Superlattices and Microstructures. 25. 537-548 (1999)
• [Publications] M.Kawabe: "Self-organization of high-density III-V quantum dots on high-index substrates"Jpn.J.Appl.Phys.. 38. 491-495 (1999)
• [Publications] H.Hasegawa: "Electrochemical formation and characterization of Schottky in-plane and wrap gate structure for realization of GaAs- and InP-based quantum wires and dots" Applied Surface Science. 123/124. 335 (1998)
• [Publications] T.Hashizume: "Surface passivation of GaAs with ultrathin Si_3Ni_4/Si interface control layer formed by MBE and in situ ECR plasma nitridation" Applied Surface Science. 123/124. 599 (1998)
• [Publications] H.Takahashi: "Novel InP metal-insulator-semiconductor structure having an ultrathin silicon interface control layer"" Applied Surface Science. 123/124. 615 (1998)
• [Publications] B.Adamowicz: "Photoluminescence characterization of air exposed AlGaAs surface and passivated ex situ by ultrathin silicon interface control layer" Physica E. 2. 261 (1998)
• [Publications] N.Tsurumi: "In-Situ Tunneling Microscope Study of Formation Process of Ultrathin Si Layer by Molecular Beam Epitaxy on GaAs(001)-(2x4) Surface" Japanese Journal of Applied Physics. 37. 1501 (1998)
• [Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37. 1584 (1998)
• [Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In_<0.53>Ga_<0.47>As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37. 1532 (1998)
• [Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces" Japanese Journal of Applied Physics. 37. 1626 (1998)
• [Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surface and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 37. 1631 (1998)
• [Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Quantum Wire-Dot Structures by Selective Molecular Beam Expitaxy on InP Patterned Substrates" Solid Staate Electronics. 42. 1413 (1998)
• [Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Redge Quantum Wire Grown by Selective MBE" Solid State Electronics. 42. 1419 (1998)
• [Publications] S.Chakraborty: "Formation of ultrathin oxynitride layers on Si (100) by low-temperature electron cyclotron resonance N_2O plasma oxynitridation process" Journal of Vacuum Science and Technology. B16. 2159 (1998)
• [Publications] Y.Ishikawa: "Scanning tunneling microscopy and x-ray photoelectron spectroscopy studies of atomic structure and Fermi level pinning on GaAs (110) surfaces grown by molecular beam epitaxy" Journal of Vacuum Science and Technology. B16. 2387 (1998)
• [Publications] Y.Sato: "Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Three Schottky Wrap Gates" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] H.Fujikura: "Control of Dot Size and Tunneling Barrier Profile in In_<0.53>Ga_<0.47>As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] T.Muranaka: "Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] H.Fujikura: "Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] M.B.Takeyama: "Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] T.Sato: "Strong Correlation Between Interface Microstructure and Barrier Height in n-InP Schottky Contacts Formed by In Situ Electrochemical Process" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] C.Kaneshiro: "Electrochemical Etching of Indium Phosphide Surfaces Studied by Voltammetry and Scanned Probe Microscopes" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] H.Takahashi: "XPS and Contactless C-V Characterization of Novel Oxide-Free InP Passivation Process Using Silicon Surface Quantum Well" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] H.Fujikura: "Formation of Highly Uniform InGaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy on Novel InP Patterned Substrates" Thin Solid Film. (in press). (1999)
• [Publications] H.Fujikura: "Selective MBE Growth Quantum Wire-Dot Coupled Structures with Novel High Index Facets for InGaAs Single Electron Transistor Arrays" Microelectronics. (in press). (1999)
• [Publications] J.Nakamura: "Transport Properties of Schottky In-Plane-Gate GaAs Single and Coupled Quantum Wire Transistors" IOP conference series. (in press). (1999)
• [Publications] N.Ono: "N.Ono. H.Fujikura and H.Hasegawa : “Study of Selective MBE Growth on Patterned (001) InP Substrates Toward Realization of <100>-Oriented InGaAs Ridge Quantum Wires" IOP conference seriesc. (in press). (1999)
• [Publications] C.Kaneshiro: "Realization of Strongly Metal-Deppendent Schottky Barrier Heights on n-GaAs by In Situ Electrochemical Process" IOP conference series. (in press). (1999)
• [Publications] T.Muranaka: "Realization of InP-Based InGaAs Single Electron Transistors on Wires and Dots by Selective MBE" Microelectronic Engineering. (in press). (1999)
• [Publications] H.Okada: "GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates" Microelectronic Engineering. (in press). (1999)
• [Publications] H.Sai: "Growth of Device Quality InGaAs/GaAs Heterostructures by Gas Source Molecular Beam Epitaxy using Tertiarybutylphosphine" Solid State Electronics. (in press). (1999)
• [Publications] H.Sai: "Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiaryphosphine-Based Molecular Beam Epitaxial Growth of In_<0.48>Ga_<0.52>P on GaAs" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] H.Sai: "H.Sai. H.Fujikura and H.Hasegawa : “Gas Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] H.Hasegawa: "Properties of Metal-Semiconductor Interfaces Formed on n-type GaN" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] T.Sato: "Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Depositionc" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] T.Yoshida: "A Novel Non-Destructive Characterization Method of Electronic Properies of Pre- and Post-Processing Silicon Surfaces Based on Ultrahigh-Vacuum Contactless Capacitance-Voltage Measurements" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] M.Mutoh: "Effects of Surface Reconstruction on Silicon Interface Control Layer Based Passivation of (001) GaAs Surfaces Studied in an Ultrahigh-Vacuum Multichamber System" Japanese Journal of Applied Physics. 38(in press). (1999)
• [Publications] H.Takahashi,: "In-situ Characterization Technique of Compound Semiconductor Hetrostructure Growth and Device Processing Steps Based on UHV Contactless Capacitance-Voltage Measurement" Solid-State Electron.(in press). (1999)
• [Publications] Y.Koyama: "Formation Processes and Properties of Schottky and Ohmic Contacts on n-type GaN form Field Effect Transistor Applications" Solid-State Electron.(in press). (1999)
• [Publications] A.Hamamatsu: "A.Hamamatsu, C.Kaneshiro, H.Fujikura and H.Hasegawa,“Formation of <001>-Aligned Nano-Scale Pores on (001) n-InP Surfaces by Photoelectrochemical Anodization in HCl"" Journal of Electroanalytical Chemistry. (in press). (1999)
• [Publications] K.Kawamura: "Theory of artificial atoms and molecules usining semiconductor quantum dots" Japanese Journal of Applied Physics. 38. 366 (1999)
• [Publications] M.Kawabe: "Self-organization of high-density III-V quantum dots on high-index substrates" Japanese Journal of Applied Physics. 38. 491 (1999)
• [Publications] G.Yusa: "Trapping of a single photogenerated hole by an InAs quantum dot in GaAs/n-AlGaAs quantum trap FET and its spectral response in the near infrared regime" Physica E. 2. 734 (1998)
• [Publications] S.Nomura: "Enhancement of photoluminescence near Fermi level in bias voltage controlled quantum dot array" Solid-State Communications. 106. 815 (1998)
• [Publications] Y.Hanada: "Direct Formation of InGaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. 印刷中. (1998)
• [Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. 印刷中. (1998)
• [Publications] T.Hashizume: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. 印刷中. (1998)
• [Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 印刷中. (1998)
• [Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. 印刷中. (1998)
• [Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2x4)Surface" Japanese Journal of Applied Physics. 印刷中. (1998)
• [Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 印刷中. (1998)
• [Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124. (1998)
• [Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124. (1998)
• [Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124. (1998)
• [Publications] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)
• [Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)
• [Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (1998)
• [Publications] H.Hasegawa: "Formation of InP-Based Quantum Sttuctures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)
• [Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned(001)InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)
• [Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)
• [Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)
• [Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)
• [Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)
• [Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)
• [Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)
• [Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)
• [Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)
• [Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)
• [Publications] Y.Ishikawa: "Kink defects and fermi level pinning on(2x4)reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and X-ray photoelectron spectroscopy" Journal of Vacuum Science and Technology B. 15. 1163-1172 (1997)
• [Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)
• [Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)
• [Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown(2x4)reconstructed(001)InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)
• [Publications] T.Sato: "Large Schottky Barrier Heghts on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)
• [Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)
• [Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111)Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)
• [Publications] T.Jikimoto: "Photoemission Study of 6H-SiC(0001)Si face" Applied Surface Science. 117/118. 794 (1997)
• [Publications] M.Hirai: "Investigation of metal/SiC interface using electron spectroscopy and scanning tunneling microscopy" Applied Surface Science. 113/114. 467 (1997)
• [Publications] T.Loher: "Heteroepitaxial Growth of Lattice Mismatched Materials using Layered Compound Buffer Layers" Applied Surface Science. (1998)
• [Publications] K.Ueno: "Fabrication of C_<60> Nanostructures by Selective Growth on GaSe/MoS_2 and InSe/MoS_2 Heterostructure Substrates" Applied Surface Science. (1998)
• [Publications] K.Sasaki: "Nanostructure Fabrication Using Selective Growth on Nanosize Patterns Drawn by a Scanning Probe Microscope" Japanese Journal of Applied Physics. 36. 4061-4064 (1997)
• [Publications] S.Niwa: "Energy relaxation of photo-excited hot electrons under an external electric field in a quasi-one dimensional structures" Physica Status Solidi(b). 204. 283-286 (1997)
• [Publications] N.Sawaki: "Tunneling transfer and energy relaxation rate of photo-excited carriers in coupled quantum wells" Japanese Journal of Applied Physics. 36. 4008-4012 (1997)
• [Publications] N.Sawaki: "Effect of carrier-carrier scattering on the tunneling and energy relaxation process in a coupled quantum well" Physica Status Solidi(b). 204. 423-426 (1997)
• [Publications] Y.Yasuda: "Effects of H-termination on initial oxidation process" Applied Surface Science. 113/114. 579 (1997)
• [Publications] K.Ohmori: "Initial oxidation of Si(100)-(2x1)H monohydride surfaces studies by scanning tunneling micro scopy/scanning tunneling spectroscopy" Applied Surface Science. 117/118. 114 (1997)
• [Publications] Y.Matsumoto: "Advantages of the Asymmetric Tunnel Barrier for High Density Integration of Single Electron Devices" Japanese Journal of Applied Physics. 36. 4143-4146 (1997)
• [Publications] M.Otabe: "Observation of Single Electron Charging Effects in Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letter. 72. (1998)
• [Publications] Y.Kanemitsu: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Physical Review B. 55. R7375-R7378 (1997)
• [Publications] A.Dutta: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)
• [Publications] Y. Ishikawa: "Missing-dinner structures and their kink defects on molecular beam epitaxially grown (2×4) reconstruced (001) InP and GaAs surfaced studied by ultrahigh-vacuum scanning tunneling microscopy" Jpn. J. Appl. Phys.36 (3)印刷中. (1997)
• [Publications] B. W. Yang: "″Properties of InAs_xP_<1-x> Layer Formed by P-As Exchanbe Reaction on (001) InP Surface Exposed to As_4 Beam″" Jounal of Electronic Materials. 25. 379-384 (1996)
• [Publications] H. Fujikura: "″Fabrication of InP-Based InGaAs Ridge Quantum Wires Utilizing Selective Moleculat Beam Epitaxial Growth on (311) A Facets″" Jounal of Electronic Materials. 25. 619-625 (1996)
• [Publications] S. Suzuki: "″A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique″" Jounal of Electronic Materials. 25. 649-656 (1996)
• [Publications] B. X. Yang: "″Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)
• [Publications] H. Fujikura: "″Photoluminescence and Cathodoluminescence Investigation of Uptical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molective Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1333-1339 (1996)
• [Publications] S. Kasai: "Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers" Japanese Journal of Applied Physics. 1340-1347 (1996)
• [Publications] S. Kasai: "Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)
• [Publications] S. Uno: "0.86e V Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)
• [Publications] M. Kihara: "″Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy″." Appl. Sur. Sci. 印刷中. (1997)
• [Publications] K. Jinushi: "Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)
• [Publications] H. Fujikura: "Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interface Control Layers" Journal of Vacuum Science and Technoligy. B-14. 2888-2894 (1996)
• [Publications] H. Hasegawa: "Interface-controled Schottky barriers on InP and related materials" Solid-Stat Electronics. 印刷中. (1997)
• [Publications] T. Hashizume: "Quantum Transport A Schottky In-Plane・Gate Controlled GaAs/AlGaAs Quantum Well Wires" Phisica B. 227. 42-45 (1996)
• [Publications] H. Tomozawa: "Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG" Phisica B. 227. 112-115 (1996)
• [Publications] S. Shiobara: "Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Motecular Beam Epitaxy" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)
• [Publications] 長谷川英機: "化合物半導体量子細線および量子ドットの製作" 光学. 25. 448-455 (1996)
• [Publications] 長谷川英機: "化合物半導体量子構造表面のSi超薄膜界面制御層によるパッシベーション" 表面科学. 17. 567-574 (1996)
• [Publications] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 「応用物理」. 65 (2). 108-118 (1996)
• [Publications] M. Araki: "Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxv″" Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
• [Publications] H. Fujikura: "″Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Jpn. J. Appl. Phys.36 (3)印刷中. (1997)
• [Publications] S. Kasai: "″Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Besed on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas21GC22:Jpn. J. Appl. Phys" 36 (3)印刷中. (1997)
• [Publications] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
• [Publications] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys. 36 (3)印刷中. (1997)
• [Publications] K. Kawamura: "Theory of single electron tunneling through a quantum dot dimer," Jpn. J. Appl. Phys. 36(印刷中). (1997)
• [Publications] T. Mizuno: "Studies of charging effects on resonant tunneling diodes in terms of extended friedel sum rule" J. Phys Soc. Jap.65. 2594-2601 (1996)
• [Publications] G. Yusa: "GaAs/n-AlGaAs fiels effect transistor with embedded InAs quantum traps and is programmable threshold characteristics," Electron. Lett. 32. 491-492 (1996)
• [Publications] M. Narihiro: "Resonant tunneling of electrons via 20nm-scale InAs quantum dot and magnetotunneling spectroscopy of its electronic states," Appl. Phys. Lett. 70. 105-107 (1997)
• [Publications] L. P. Kouwen boven: "High-frequency transport through mesoscopic structures" Surface Science. 361/362. 591-595 (1996)
• [Publications] D. Dixon: "Linear and non-linear transport through coupled quantum dot" Surface Science. 361/362. 636-670 (1996)
• [Publications] D. Dixon: "Influence of energy level alignment on tunneling between coupled quantum dots" Phys. Rev. B. 53. 12625-12631 (1996)
• [Publications] Y. J. Chun: "The role of atomic hydrogen for formation of quantum dots by self-organizing process in MBE," Physica B. 227. 229-301 (1996)
• [Publications] Y. J. Chun: "Array of self-organized InGaAs quantum dots on GaAs (311) substrates by atomic hydrogen-assisted molecular beam epitaxy," Jpn. J. Appl. Phys. 35. L1075-1077 (1996)
• [Publications] Y. J. Chun: "Surfactant effects of atomic hydrogen on low-temperature growth of InAs on InP" Jpn. J. Appl. Phys. 35. L1689-1692 (1996)
• [Publications] M. Kawabe: "Formation of high density quantum dot array by molecular beam epitaxy" Jpn. J. Appl. Phys.36(印刷中). (1997)
• [Publications] "Collected Abstracts of 1996 International Symposium on Formation, Physics snd Devia Application of Quantum Dot Structures" Hideki Hasegawa, 214 (1996)
• [Publications] "単電子デバイスとその高密度集積化平成8年度成果報告書" 長谷川英機, 178 (1997)