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Langmuir Adsorption and Reaction Control in Process for Fabrication of Ultrasmall Group IV Semiconductor Devices

Research Project

Project/Area Number 08405022
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

MUROTA Junichi  RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION,TOHOKU UNIVERSITY PROFESSOR, 電気通信研究所, 教授 (70182144)

Co-Investigator(Kenkyū-buntansha) SAKURABA Masao  RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION,TOHOKU UNIVERSITY RESEARCH ASSOCI, 電気通信研究所, 助手 (30271993)
MATSUURA Takashi  RESEARCH INSTITUTE OF ELECTRICAL COMMUNICATION,TOHOKU UNIVERSITY ASSOCIATE PROFE, 電気通信研究所, 助教授 (60181690)
Project Period (FY) 1996 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥11,100,000 (Direct Cost: ¥11,100,000)
Fiscal Year 1998: ¥5,500,000 (Direct Cost: ¥5,500,000)
Fiscal Year 1997: ¥5,600,000 (Direct Cost: ¥5,600,000)
KeywordsLangmuir-type Adsorption and Reaction / Group IV Semiconductor / Ultrasmall Devices / Atomic-Layer Growth / Atomic-Layer Etching / Impurity Doping / Hydrogen Termination / Low-Temperature Heteroepitaxial Growth / 表面処理
Research Abstract

In this scientific research, to establish fabrication process technology of ultrasmall group IVsemiconductor devices, extended researches have been carried out including fundamentals and applications of Langmuir-type adsorption/reaction process such as atomic-layer growth and etching. As to atomically controlled processing, by utilizing a low-temperature ultraclean reaction atmosphere, flash heating by Xe lamps, and low-energy ion irradiation by an ECR plasma, we have achieved atomic layer-by-layer growth of Si and Ge, atomic-layer nitridation of Si by NH_3 at 400゚C, atomic-layer carbonization of Si(100) by CH_4 at 500-600゚C, atomic-layer adsorption of SiH3CH3 on Si and Ge, atomic-layer doping of P on Si and Ge, fractional atomic-layer etching of a SiGe system, atomic-layer role-share etching of silicon nitride, etc. Adsorption and reaction process in low temperature selective deposition of W has been also investigated by alternate supply of WF6 and SiH_4. Each of these atomic-order processes has been described by Langmuir-type simple adsorption and reaction formalism, which contributes to establish a base of a high precision control of the process. As to device fabrication process, we have fabricated ultrasmall MOSFETs utilizing super-self-aligned ultrashallow junction formation in the source/drain region, and MOSFETs with a SiGe epitaxial layer as a channel. Also, we have developed each process such as selective epitaxy of SiGe and in-situ heavy doping with P and B, highly selective anisotropic etching of heavily doped polysilicon, reduction of source/drain resistance by selective growth of W, as well as a total ultrasmall device process by combination of these individual processes. These research results supply a fundamental key to ultrasmall device fabrication technology with group IVsemiconductors.

Report

(4 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • 1996 Annual Research Report
  • Research Products

    (127 results)

All Other

All Publications (127 results)

  • [Publications] T.Watanabe, et al: ""Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures"." the 13th International Conference on Chemical Vapor Deposition. Vol.PV96-5. 504-509 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Yamamoto, et al: "“Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System"." the 13th International Conference on Chemical Vapor Deposition. Vol.PV96-5. 814-820 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Sugiyama, et al: "“Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"." 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes. Mo1510. (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Kobayashi, et al: "“Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"." The 9th International Conference on Vapor Growth & Epitaxy. 116. (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, et al: "“Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100) "." 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS'96).p.24. (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Sugiyama, et al: "“Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"." Appl.Surf.Sci.112. 187-190 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Kobayashi, et al: "“Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"." J.Crystal Growth.Vol.174, No-1-4,. 686-690 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota. et al: "“Atomic-Layer Surface Reaction of Silane on the Germanium (100) Surface"." Proceeding of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach,. 97-101 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Ishii et al: "“0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes"," ULSI Science and Technology′97,. PV97-3. 441-449 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.J.Lee, et al: "“Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD"," The 14th International Conference on Chemical Vapor Deposition.PV97-25. 1356-1363 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe, et al: "“Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3"," The 14th International Conference on Chemical Vapor Deposition.PV97-25. 97-104 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Sakuraba, et al: "“H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2"" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.PV97-35. 213-220 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe, et al: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100)" Jpn.J.Appl.Phys. Part1. 36(6B). 4042-4045 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, et al: "Fabrication of 0.1μm MOSFET with Super Self-Aligaed Ultrashallow Junction Electrodes Using Selectire Si_<1-x>Ge_x CVD" SDERC 27. 27. 376-379 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Matsuura, et al: "Atomic-Layer Etching confrol of Si and Ge Using an Ultraclean ECR Plasma" National Symp.Am.Vac.Soc. 44. 176- (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, et al: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-X>Ge_X on Si for Application to Ultrasmall Devlces" National Symp.Am.Vac.Soc.44. 176- (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, et al: "Atomic-Layer Growth of Si on Ge (100) Using SiH_4" National Symp.Am.Vac.Soc.44. 175- (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Izena et al: "Low-Temperature Reaction of CH_4 on Si (100)" J.Crystal Growth. 188, 1-4. 131-136 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Matsuura et al: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by an Ultraclean ECR Plasma" Surf.Sci.402-404. 202-205 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Yamamoto et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.408, 1-3. 190-194 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe et al: "Atomic-Order Thermal Nitridation of Silicon at Low Temperatures" J.Electrochem.Soc.145, 12. 4252-4256 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe et al: "Separation between Surface Adsorption and Reaction of NH_3 on Si (100) by Flash Heating" Jpn.J.APPL.Phys.38, 1B. 7717-7722 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si_<1-X>Ge_X Films Epitaxially Grown Using Ultraclean LPCVD" Thin Solid Films. in press. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Moriya et al: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-X> Ge_X Films Using Ultraclean LPCVD" Mat.Res.Soc.Symp.Proc.533. 349-354 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota et al: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-X> Ge_X Epitaxial Growth Using Ultraclean LPCVD" Proceedings of the 8th International Symposium on Silicon Materials Science and Technology. PV98-1. 822-833 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Honda et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Proceedings of the 12th International Symposium on Plasma Processing. PV98-4. 94-100 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota et al: "Atomic-Layer Surface Reaction of NH_3 on Si (100) at Low Temperatures" Abstract of 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures. Abs.No.Tu4-10. 134 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota et al: "Process Technology for Sub 0.1μm Si Devices" Advanced Research Workshop Future Trends in Microelectronics. in press. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota et al: "Heavy Doping Characteristics of P and B in Si_<1-X> Ge_X Epitaxial Films" The European Materials Research Society Spring Meeting Abstract. D-24 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.J.Lee et al: "In-Situ Phosphorus Doping on Si_<1-X> Ge_X Epitaxial Growth in the SiH_4-GeH_4-PH_3 Gas System by Using LPCVD" Digest of 1998 International Microprocesses and Nanotechnology Conference. 31-32 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Matsuura et al: "Atomic-Order Layer Etching of Silicon Nitride with a Role-Share Method Using an ECR Plasma" Abstract of 4th Asia-Pacific Conference on Plasma Science and Technology & 11th Symposium on Plasma Science for Materials. 61 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_<1-X> Ge_X Films Epitaxially Grown Using Ultraclean LPCVD" Abstract of 14th International Vacuum Congress & 10th International Conference on Solid Surfaces. EM.WeA.4. 88 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Yamamoto et al: "Initial Reaction in Low-Temperature Selective Growth of W Using a WF_6 and SiH_4 Gas System" 194th Meeting Abstracts of The Electrochemical Society. 352 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe et al: "Atomic-Layer Nitridation of Si(100) by NH_3 Using Flash Heating" 194th Meeting Abstracts of The Electrochemical Society. 806 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Shimamune et al: "Atomic-Layer Adsorption of P on Si (100) by Using Ultraclean LPCVD" 194th Meeting Abstracts of The Electrochemical Society. 784 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Seino et al: "Atomic-Order Nitridation of Si by Radical-and Ion-Induced Reactions Using an Ultraclean ECR Nitrogen Plasma" 194th Meeting Abstracts of The Electrochemical Society. 799 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Sakuraba et al: "Surface Termination of the Ge (100) and Si (100) Surfaces by Using DHF Solution Dipping" Mat.Res.Soc.Symp.Proc.in press. (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 室田淳一: "CVD薄膜形成における表面吸着水素の効果「ウェーハ表面完全性の創成・評価技術」, サイエンスフォーラム, 第4章第3節, pp.160-167" 18 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures" Proc.13th Int.Conf.on Chemical Vapor Deposition. Vol.PV96-5. 504-509 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Yamamoto, T.Matsuura and J.Murota: "Selective Growth of W at Very Low Temperatures Using a WF_6-SiH_4 Gas System" Proc.13th Int.Conf.on Chemical Vapor Deposition. Vol.PV96-5. 814-820 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Sugiyama, T.Matsuura, and J.Murota: "Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma" Proc.4th Int.Symposium on Atomic Layer Epitaxy and Related Surface Processes. MO1510 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Kobayashi, M.Sakuraba, T.Matsuura, J.Murota, and N.Mikoshiba: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" The 9th Internatioal Conference on Vaopr Growth & Epitaxy. 116 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, M.Sakuraba, T.Watabane and T.Matsuura: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)" 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS'96). 24 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Sugiyama, T.Matsuura, and J.Murota: "Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma" Appl.Surf.Sci.Vol.112. 187-190 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Kobayashi, M.Sakuraba, T.Matsuura, J.Murota, and N.Mikoshiba: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" J.Crystal Growth. Vol.174, No.1-4. 686-690 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, M.Sakuraba, T.Watanabe and T.Matsuura: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)" Proc.of the Second Topical Meeting on Structural Dynamics of Epiatxy and Quantum Mechanical Approach. 97-101 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Ishii, K.Goto, M.Sakuraba, T.Matsuura, J.Murota, K.Kudoh and M.Koyanagi: "0.1mum MOSFET with Super Self-Ainged Shallow Junction Electrodes" Proc.6th Int.Symp.on Ultra Large Scale Integration Science and Technology. Vol.PV97-3. 441-449 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, M.Sakuraba, T.Watanabe and T.Matsuura: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100)" 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS'96). 24 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.J.Lee, M.Sakuraba, T.Matsuura and J.Murota: "Phosphorus Doping Effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD" Proc.14th Int.Conf.on Chemical Vapor Deposition. Vol.PV97-25. 1356-1363 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3" Proc.14th Int.Conf.on Chemical Vapor Deposition. Vol.PV97-25. 97-104 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Sakuraba, T.Matsuura and J.Murota: "H-Termination on Ge (100) and Si (100) by Diluted Hf Dipping and by Annealing in H_2" Proc.5th Int.Symp.on Cleaning Technology in Semiconductor Device Manufacturing. PV97-35. 213-220 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura, and J.Murota: "Atomic-Layer Surface Reaction of SiH_4 on Ge (100)" Jpn.J.Appl.Phys.Vol.36, Part 1, No.6B. 4042-4045 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, M.Ishii, K.Goto, M.Sakuraba, T.Matsuura, Y.Kudoh and M.Koyanagi: "Fabrication of 0.1 m MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_<1-x>Ge_x CVD" Proc.27th European Solid-State Device Research Conf., Stuttgart, Germany, September. 22-24. 376-379 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Matsuura, T.Sugiyama and J.Murota: "Atomic-Layer Etching Control of Si and Ge Using an Ultraclean ECR Plasma" 44th National Symp.of American Vacuum Society, San Jose, California, October. 20-24. 176 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, M.Sakuraba and T.Matsuura: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-x>Ge_x on Si for Application to Ultrasmall Devices" 44th Nathional Symp.of American Vacuum Society, San Jose, California, October. 20-24. 176 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, M.Sakuraba, T.Watanabe and T.Matsuura: "Atomic-Layer Growth of Si on Ge (100) Using SiH_4" 44th National Symp.of American Vacuum Society, San Jose, California, October. 20-24. 175 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Izena, M.Sakuraba, T.Matsuura and J.Murota: "Low-Temperature Surface Reaction of CH_4 on Si (100)" J.Crystal Growth. (in press), Vol.188, No.1-4. 131-136 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Matsuura, T.Sugiyama and J.Murota: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by anUltraclean ECR Plasma" Surf.Sci.Vol.402-404. 202-205 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Yamamoto, T.Matsuura and J.Murota: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.Vol.408, No.1-3. 190-194 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe, A.Ichikawa, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Order Thermal Nitridation of Silicon at Low Temperatures" J.Electrochem.Soc.Vol.145, No.12. 4252-4256 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura and J.Murota: "Separation between Surface Adsorption and Reaction of NH_3 on Si (100) by Flash Heating" Jpn.J.Appl.Phys.Vol.38, Part1, No.1B. 515-517 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Moriya, M.Sakuraba, T.Matsuura and J.Murota: "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Epitaxially Grown Using Ultraclean LPCVD" Thin Solid Films. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Moriya, M.Sakuraba, T.Matsuura, J.Murota, I.Kawashima, and N.Yabumoto: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Using Ultraclean LPCVD" SYMPOSIUM FF (Epitaxy and Applications of Si-Based Heterostructures), FF9.8., MRS SPRING MEETING,San Francisco, April. 13-17. 490 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, A.Moriya, M.Sakuraba, C.J.LEE,and T.Matsuura: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-x>Ge_x Epitaxial Growth Using Ultraclean LPCVD" Eighth Int.Symp.on Silicon Materials Science and Technology in the 193rd Meeting of The Electrochemical Society, San Diego, California, May. 3-8 PV98-1. 822-833 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Honda, T.Matsuura and J.Murota: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" PLASMA PROCESSING X II The Electrochemical Society, San Diego, California, May. 3-8.PV.98-4. 94-100 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, T.Watanabe, M.Sakuraba and T.Matsuura: "Atomic-Layer Surface Reaction, of NH_3 on Si (100) at Low temperatures" 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS'98, Sapporo, Japan, May 31-June. 4 Abs.No.Tu4-10. 134 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.Murota, T.Matsuura and M.Sakuraba: "Process Technology for Sub 0.1mum Si Devices" 1998 Advanced Research Workshop Future Trends in Microelectronics : Off the Beaten Path, Ile des Embiez, France, May 31-June. 5 (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.J.Lee, T.Matsuura and J.Murota: "In-Situ Phosphorus Doping on Si_<1-x>Ge_x Epitaxial Growth in the SiH_4-GeH_4-PH_3 Gas System by Using LPCVD" Digest of 1998 International Microprocesses and Nanotechnology Conference, Kyungju, Korea, July. 13-16. 31-32 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Matsuura, Y.Honda and J.Murota: "Atomic-Order Layer Etching of Silicon Nitride with a Role-Share Method Using an ECR Plasma" 4th Asia-Pacific Conference on Plasma Science & Technology (APCPST'98) & 11th Symposium on Plasma Science for Materials (SPSM'98), Sydney, NSW,Australia, July. 27-29. 61 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Moriya, M.Sakuraba, T.Matsuura and J.Murota: "Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_<1-x>Ge_x Films Epitaxially Grown Using Ultraclean LPCVD" 14th International Vacuum Congress (IVC-14), 10th International Conference on Solid Surfaces (ICSS-10), Birmingham, UK,August 31-September. 4, Abs.No.EM.WeA.4. 88 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Yamamoto, T.Matsuura and J.Murota: "Initial Reaction in Low-Temperature Selective Growth of W Using a WF_6 and SiH_4 Gas System" 194th Meeting of The Electrochemical Society, Boston, Massachusetts, USA,November. 1-6 Abs.No.352. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Watanabe, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Layer Nitridation of Si (100) by NH_3 Using Flash Heating" 194th Meeting of The Electrochemical Society, Boston, Massachusetts, USA,November. 1-6 Abs.No.806. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Y.Shimamune, M.Sakuraba, T.Matsuura and J.Murota: "Atomic-Layer Adsorption of P on Si (100) by Using Ultraclean LPCVD" 194th Meeting of The Electrochemical Society, Boston, Massachusetts, USA,November. 1-6 Abs.No.784. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Seino, T.Matsuura and J.Murota: "Atomic-Order Nitridation of Si by Radical- and Ion-Induced Reactions Using an Ultraclean ECR Nitrogen Plasma" 194th Meeting of The Electrochemical Society, Boston, Massachusetts, USA,November. 1-6 Abs.No.799. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Sakuraba, T.Matsuura and J.Murota: "Surface Termination of the Ge (100) and Si (100) Surfaces by Using DHF Solution Dipping" 1998 Fall MEETING,Materials Research Society, Symposium I (III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications), Boston, Massachusetts, USA.November 30-December 4. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Izena et al: "Low-Temperature Reaction of CH_4 on Si(100)" J.Crystal Growth. 188,1-4. 131-136 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Matsuura et al: "Atomic-Layer Surface Reaction of Chlorine on Si and Ge Assisted by an Ultraclean ECR Plasma" Surf.Sci.402-404. 202-205 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Yamamoto et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.408,1-3. 190-194 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Watanabe et al: "Atomic-Order Thermal Nitridation of Silicon at Low Temperatures" J.Electrochem.Soc.145,12. 4252-4256 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Watanabe et al: "Separation between Surface Adsorption and Reaction of NH_3 on Si(100)by Flash Heating" Jpn.J.Appl.Phys.38,1B. 7717-7722 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] :A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-Doped Si_<1-x>Ge_xFilms" Thin Solid Films. (in press). (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] A.Moriya et al: "Low-Temperature Epitaxial Growth of In-Situ Heavily B-Doped Si_<1-x>Ge_x Films Using Ultraclean LPCVD" Mat.Res.Soc.Symp.Proc.533. 349-354 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] J.Murota et al: "In-Situ Heavy Doping of P and B in Low-Temperature Si_<1-x>Ge_xEpitaxial Growth Using Ultraclean LPCVD" Proceedings of the 8th International Symposium on Silicon Materials Science and Technology. PV98-1. 822-833 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Honda et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Proceedings of the 12th International Symposium on Plasma Processing. PV98-4. 94-100 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] J.Murota et al: "Atomic-Layer Surface Reaction of NH_3 on Si(100)at Low temperatures" Abstract of 1998 International Symposium on Formation,Physics and Device Application of Quantum Dot Structures. Abs.No.Tu4-10. 134 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] J.Murota et al: "Process Technology for Sub 0.1μm Si Devices" Advanced Research Workshop Future Trends in Microelectronics. (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] J.Murota et al: "Heavy Doping Characteristics of P and B in Si_<1-x>Ge_x Epitaxial Films" The European Materials Research Society Spring Meeting Abstract. D-24 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] C.J.Lee et al: "In-Situ Phosphorus Doping on Si_<1-x>Ge_x Epitaxial Growth in the SiH_4-GeH_4-PH_3 Gas System by Using LPCVD" Digest of 1998 International Microprocesses and Nanotechnology Conference. 31-32 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Matsuura et al: "Atomic-Order Layer Etching of Silicon Nitride with a Role-Share Method Using an ECR Plasma" Abstract of 4th Asia-Pacific Conference on Plasma Science and Techonology & 11th Symposium on Plasma Science for Materials. 61 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] A.Moriya et al: "Doping and Electrical Characteristics of In-Situ Heavily B-doped Si_<1-x>Ge_x Films Epitaxially Growth Using Ultraclean LPCVD" Abstract of 14th International Vacuum Congress & 10th International Conference on Solid Surface. EM.WeA.4. 88 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Yamamoto et al: "Initial Reaction in Low-Temperature Selective Growth of W Using a WF_6 and SiH_4 Gas System" 194th Meeting Abstracts of The Electrochemical Society. 352 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Watanabe et al: "Atomic-Layer Adsorption of P on Si(100)by Using Flash Heating" 194th Meeting Abstracts of The Electrochemical Society. 806 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] Y.Shimamune et al: "Atomic-Layer Nitridation of Si(100)by NH_3 Using Ultraclean LPCVD" 194th Meeting Abstracts of The Electrochemical Society. 784 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Seino et al: "Atomic-Order Nitridation of Si by Radical-and Ion-Induced Reactions Using Ultraclean ECR Nitrogen Plasma" 194th Meeting Abstracts of The Electrochemical Society. 799 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Sakuraba et al: "Surface Termination of the Ge(100)and Si(100) Surfaces by Using DHF Solution Dipping" Mat.Res.Soc.Symp.Proc.(in press). (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 室田淳一: "CVD薄膜形成における表面吸着水素の効果「ウェーハ表面完全性の創成・評価技術」,サイエンスフォーラム,第4章第3節,pp.160-167" 18 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] T.Watanabe, et al: "Atomic-Layer Sarface Reaction of SiH_4.on Ge(100)" Jpn.J,Appl.Phys. Part1. 36(6B). 4042-4045 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] A.Izena, et al: "Low-Temperature Surtace Reaction of CH_4 on the Si(100) Surface" J.Crystal Growth. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] C.J.Lee, et al: "Phosphorus Doping Effect on Si_<1-x> Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVO" CVD XIV. PV97-25. 1356-1363 (1997)

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      1997 Annual Research Report
  • [Publications] J.Murota, et al: "Fabrication of 0.1μm MOSFET with Super Self-Aligned Ultrashallow Junction Electrodes Using Selective Si_<1-x> Ge_x CVD" SDERC 27. 27. 376-379 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Matsuura, et al: "Atomic-Layer Etching Control of Si and Ge Using an Ultraclean ECR Plasma" National Symp.Am.Vac.Soc. 44. 176 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Honda, et al: "Atomic-Order Layer Role-Share Etching of Silicon Nitride Using an ECR Plasma" Plasma Processing XII. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Yamamoto, et al: "Surface Reaction of Alternately Supplied WF_6 and SiH_4 Gases" Surf.Sci.(印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Sakuraba, etal: "H-Termination on Ge(100) and Si(100)by Diluted HF Dipping and by Annealing in H_2" 5th Int.Symp.Cleaming Technology in Semicond. Derice Manufacturing. PV97-35(印刷中). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Matsuura, et al: "Atomic-Layer Sarface Reaction of Chlorine on Si and Ge Assisted by an Ultracleam ECR Plasma" Surf.Sci.(印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Watanabe, et al: "Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3" CVD XIV. PV97-25. 97-104 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] J.Murota.et al: "Low Temperature Selective Heteroepitaxy of Heavily Doped Si_<1-x> Ge_x on Si for Application to Ultrasmall Devices" National Symp.Am.Vac.Soc.44. 176 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] J.Murota, et al: "Heavy Poping Characteristics of P and B in Si_<1-x>Ge_x Epitaxial Films" E-MRS Spring Meeting. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Sugiyama, et al: "Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma" Appl.Surf.Sci.112. 187-190 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Kobayashi, et al: "Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas" J.Crystal Growth. 174(1-4). 686-690 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Ishii, et al: "0.1μm MOSFET with Saper Self-Aligned Shallow Junction Electrodes" ULSI Scince and Technology.,97. PV97-3. 441-449 (1997)

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      1997 Annual Research Report
  • [Publications] J.Murota, et al: "Atomic-Layer Growth of Si on Ge(100) Using SiH_4" National Symp.Am.Vac.Soc.44. 175 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] A.Moriya, et al: "Low-Temperature Epitaxial Growth of In-Situ. Heavily B-Doped Si_<1-x>Gex Films Using Ultracleam LPCVD" MRS Spring Meeting. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] J.Murota, et al: "In-Situ Heary Doping of P and B in Low-Temperature Si_<1-x>Gex Epitaxial Growth Using Ultraclean LPCVD" Silicon Materials Science and Tednotogy VIII. (印刷中). (1998)

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      1997 Annual Research Report
  • [Publications] D. K. Nayak.: ""High-Mobility Strained-Si PMOSFET's"" IEEE Trans. Electron Devices.Vol. 43. No. 10.1709-1716 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Sugiyama.: ""Atomic-Layer Etching of Ge Using and Ultraclean ECR Plasma"." Appl. Surf. Sci.(in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Kobayashi: ""Initial Growth characteristics of Germanium on Silicon in LPCVD Using Germane Gas"" J. Crystal Growth.Vol. 174, No-1-4(in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Watanabe: ""Atomic-Order Layer Growth of Silicon Nitride Films at Low Temperatures"," the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 504-509 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y. Yamamoto: ""Selective Growth of W at Very Low Temperatures Using a WF_4-SiH_4 Gas System"" the 13th International Conference on Chemical Vapor Deposition. Vol. PV96-5. 814-820 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Sugiyama: ""Atomic-Layer Etching of Ge Using an Ultraclean ECR Plasma"" 4th International Symposium on Atomic Layer Epitaxy and Related Surface Processes. Mo1510 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Kobayashi: ""Initial Growth Characteristics of Germanium on Silicon in LPCVD Using Germane Gas"," The 9th International Conference on Vapor Growth & Epitaxy. 116 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] J. Murota: ""Atomic-Layer Surface Reaction of SiH_4 on Ge (100) and GeH_4 on Si (100) "," 1996 International Symposium on Formation. Physics and Device Application of Quantum Dot Structures (QDS'96).24 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] J. Murota: ""Atomic-Layer Surface Reaction of Silane on the Germanium (100) Surface"" Proceeding of the Second Topical Meeting on Structural Dynamics of Epitaxy and Quantum Mechanical Approach.97-101 (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] M. Ishii: ""0.1μm MOSFET with Super Self-Aligned Shallow Junction Electrodes"" ULSI Science and Technology'97.(in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] C. J. Lee: ""Phosphorus Doping effect on Si_<1-x>Ge_x Epitaxial Film Growth in the SiH_4-GeH_4-PH_3 Gas System Using Ultraclean LPCVD"." The 14th International Conference on Chemical Vapor Deposition.(in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Watanabe.: ""Atomic-Order Nitridation of the H-Terminated and H-Free Si Surfaces by NH_3"" The 14th International Conference on Chemical Vapor Deposition.(in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] M. Sakuraba: ""H-Termination on Ge (100) and Si (100) by Diluted HF Dipping and by Annealing in H_2"" 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.(in press). (1997)

    • Related Report
      1996 Annual Research Report

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