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ULTRA-LOW-POWER SILICON LSI DESIGN BASED ON Eb/No-BER CHARACTERISTICS

Research Project

Project/Area Number 08405027
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

MASU Kazuya  Res. Inst. Elect. Commun., TOHOKU UNIV., Associate Professor, 電気通信研究所, 助教授 (20157192)

Co-Investigator(Kenkyū-buntansha) NAKASE Hiroyuki  Res. Inst. Elect. Commun., TOHOKU UNIV., Research Associate, 電気通信研究所, 助手 (60312675)
YOKOYAMA Michio  Res. Inst. Elect. Commun., TOHOKU UNIV., Research Associate, 電気通信研究所, 助手 (40261573)
TSUBOUCHI Kazuo  Res. Inst. Elect. Commun., TOHOKU UNIV., Professor, 電気通信研究所, 教授 (30006283)
Project Period (FY) 1996 – 1999
Project Status Completed (Fiscal Year 1999)
Budget Amount *help
¥41,300,000 (Direct Cost: ¥41,300,000)
Fiscal Year 1999: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1998: ¥8,300,000 (Direct Cost: ¥8,300,000)
Fiscal Year 1997: ¥8,300,000 (Direct Cost: ¥8,300,000)
Fiscal Year 1996: ¥21,000,000 (Direct Cost: ¥21,000,000)
KeywordsEb / No-BER characteristics / ultra-low-power design / CMOS circuits / single electron transistor / cross talk noise / low supply voltage / CSET inverter / matched filter / 高速RFバス / NO-BER特性 / 室温動作CSET / クロストーク / CMOS / 電源電圧下限値
Research Abstract

The purpose of this research project is to establish the basis of ultra low power design of nano-scale devices on the basis of "Eb/No-BER characteristics."
1. Silicon CMOS test chips have been fabricated and their Eb/No-BER characteristics have been evaluated for the first time. Base on the measurement results, the minimum supply voltage for miniaturized CMOS circuits is proposed. Furthermore, cross-talk noises among the wiring interconnects have been estimated.
2. "Eb/No-BER characteristics" was applied to a design of single electron transistors (SET). From simulation results, peripheral parasitic capacitance and interconnect layout have been proposed as a guiding principle of nano-scale devices based on the "Eb/No-BER characteristics".
3. Complementary SET (CSET) inverter circuits were investigated from the viewpoint of room temperature operation. From the "Eb/No-BER characteristics", it has been found that room-temperature CSET is hardly implemented under up-to-date manufacturing technology.
4. Instead of normal CSET, novel matched filter type CSET has been proposed for the first time from a concept of S/N recovery. CSET which consists of 3chip matched filter has been evaluated at room temperature. Although matched filter type CSET has been proved to be effective for S/N recovery, total power consumption is found to go up. After all, it is confirmed from the "Eb/No-BER characteristics" that SET circuits is applicable to low-temperature operation.
Furthermore, ultra high-speed high-capacity bus lines for the next generation have been proposed and investigated.
We believe that the above achievements of this research fulfill the requirements for the next generation ultra low-power high-speed ULSI circuits design.

Report

(5 results)
  • 1999 Annual Research Report   Final Research Report Summary
  • 1998 Annual Research Report
  • 1997 Annual Research Report
  • 1996 Annual Research Report
  • Research Products

    (31 results)

All Other

All Publications (31 results)

  • [Publications] S.Shimano: "Reliability of Single Electron Transistor Circuits Based onEb/No-BER Characteristics"Jpn.J.Appl.Phys.. 38(1B). 403-405 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Masu: "A Novel Guiding Principle to Low Power ULSI Design : From the System Error Evaluation of Eb/No-BER"IEEE Electron Device Letters(to be summitted). (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K.Masu: "Matched Filter Type SE Circuit for Room Temperature Operation"Ext.Abst.1999 Int.Conf.on Solid State Devices and Materials,Tokyo. 82-83 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Shimano: "Reliability of SET Circuits Based on Eb/No-BER Characteristics"1998 Int.Symp.on Formation,Physics and Device Application of Quantum Dot Structures(QDS'98),Sapporo. Mo2-8. 16 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 益一哉: "GHz高速配線技術"応用物理学会シリコンテクノロジー研究会. 15. 26 (2000)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 鷺谷剛: "Eb/No-BER特性によるLSI評価"電子情報通信学会(集積回路工学研究会). ICD96-132. 85-92 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 島野哲: "マッチトフィルタ型SET論理回路の動作温度改善"平成11年春季第46回応用物理学関係連合講演会予稿集. 28zZ M-6 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] 島野哲: "Eb/No-BER特性によるSET回路動作信頼性の評価"平成10年秋季第59回応用物理学会学術講演会予稿集. 17pZ K-14 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Shimano: "Reliability of Single Electron Transistor Circuits Based on Eb/No-BER"Jpn. J. Appl. Phys.. 38(1B). 403-405 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Masu: "A Novel Guiding Principle to Low Power ULSI Design : From the System Error Evaluation of Eb/No-BER"Submitted to IEEE Electrion Device Letters..

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Shimano: "Reliability of SET Circuits Based on Eb/No-BER Characteristics"1998 Int. Symp. On Formation, Physics and Device Application of Quantum Dot Structures (QDS'98) Sapporo. Mo2-8. 16 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Masu: "Matched Filter Type SE Circuit for Room Temperature Operation"Ext. Abst. Of 1999 Int. Conf. On Solid State Devices and Materials, Tokyo. 82-83 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] T. Sagitani: "Low-Power ULSI Design using the Eb/No-BER Characteristics"Technical report of IEICE.. ICD96-132. 85-92 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] K. Masu: "ULSI GHz Interconnect"Silicon technology symposium, Japan Applied Physics. (2000)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Shimano: "Nobel matched filter type SET logic circuits for room temperature operation"Extended Abstracts (The 46th Spring Meeting, 1999) ; The Japan Society of Applied Physics and Related Societies. 28aZM-6

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S. Shimano: "Reliability of SET Circuit Based on Eb/No-BER Characteristics"Extended Abstracts (The 59th Autumn Meeting, 1998) ; The Japan Society of Applied Physics. 17pZK-14

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1999 Final Research Report Summary
  • [Publications] S.Shimano: "Reliability of Single Electron Transistor Circuits Based on Eb/No-BER Characteristics"Jpn.J.Appl.Phys.. 38(1B). 403-405 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] C.-H.Lee: "Crystallographic Structures and Parasitic Resistances for Fully Self-Aligned Metallization MOSFET"Jpn.J.Appl.Phys.. 38(10). 289-292 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Masu: "Matched Filter Type SE Circuit for Room Temperature Operation"Ext.Abst.1999 Int.. Conf. On Solid State Devices and Materials, Tokyo. 82-83 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] K.Togura: "Novel Low-Power Switched Current Matched Filter without Current-Transfer-Error Accumulation"Ext.Abst.1999 Int.. Conf. On Solid State Devices and Materials, Tokyo. 442-443 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] 西村隆正: "Direct Liquid Injection Systemを用いたAI-CVD堆積速度の向上(III)"平成12年春季第47回応用物理学関係連合講演会予稿集. 31a YA-13 (2000)

    • Related Report
      1999 Annual Research Report
  • [Publications] 西村隆正: "Direct Liquid injection Systemを用いたAI-CVD堆積速度の向上(II)"平成11年秋季第60回応用物理学会学術講演会予稿集. 1p ZN-3 (1999)

    • Related Report
      1999 Annual Research Report
  • [Publications] S.Shimano: "Reliability of Single Electron Transistor Circuits Based on Eb/NO-BERCharacteristics" 1998 Int.Symp.on Formation,Physics and Device Application of Quantum Dot Structures(QDS'98). Mo2-8. 16 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.Shimano: "Reliability of Single Electron Transistor Circuits Based on Eb/NO-BER Characteristics" Jpn.J.Appl.Phys.38. 403-405 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 島野 哲: "Eb/NO-BER特性によるSET回路信頼性の評価" 第59回応用物理学会学術講演会予稿集. 58. 17pZK14 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 島野 哲: "マッチトフィルタ型SET論理回路の動作温度改善" 第46回応用物理学関係連合講演会予稿集. 46. 28aZM6 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Masu: "Concept of Dimensional Scaling in SET Circuits" 3^<rd>lnt.Workshop on Quantum Functional Devices(QFD′97). WeS24 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 島野 哲: "シングルエレクトロン素子動作における浮遊容量の影響" 第58回応用物理学会学術講演会予稿集. 58. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 島野 哲: "浮遊容量を考慮したSET回路レイアウト" 第45回応用物理学関係連合講演会予稿集. 45(発表予定). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K. Masu: "A Novel Guiding Principle to Low Power ULSI Design : From the System Error Evaluation of Eb/No-BER" IEEE Electron Device Letters, to be subnitted. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 鶯谷 剛: "Eb/No-BER特性」によるLSI動作評価" 電子情報通信学会技術研究報告(集積回路研究会). ICD96-132. 85-92 (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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