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CONTROL OF THIN-FILM FORMATION PROCESSES BY MONOLAYER TREATMENTS ON A SURFACE OF SUBSTRATES

Research Project

Project/Area Number 08405051
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 反応・分離工学
Research InstitutionTHE UNIVERSITY OF TOKYO

Principal Investigator

KOMIYAMA Hiroshi  The Univ.of Tokyo, School of Eng.Prof, 大学院・工学系研究科, 教授 (80011188)

Project Period (FY) 1996 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥29,400,000 (Direct Cost: ¥29,400,000)
Fiscal Year 1998: ¥7,200,000 (Direct Cost: ¥7,200,000)
Fiscal Year 1997: ¥10,200,000 (Direct Cost: ¥10,200,000)
Fiscal Year 1996: ¥12,000,000 (Direct Cost: ¥12,000,000)
KeywordsMONOLAYER TRAEMENT / CHEMICAL VAPOR DEPOSITION / THIN-FILM FORMATION / MONOATOMIC SURFACE TRAETMENT / SILICON SURFACE / TRIFLUOROETOXYL GROUP / 初期成膜 / プラズマ処理 / 異常成長 / テトラエトキシシラン / TEOS / 単原子層酸化 / トリフルオロトキシ基 / 被覆率 / 速度論 / 水素終端 / 極薄酸化膜
Research Abstract

We have accomplished the purpose of our project that aims both formation of well-defined surface monolayers on various kinds of substrates and control of thin-film growth processes using monolayer treatments. Treatments includes monoatomic oxidation, nitridation, and sulfidation of hydrogen terminated silicon surfaces in vapor phase and introduction of trifluoroetoxyl groups on atomically oxidized silicon surfaces in liquid or vapor phase. Experimental conditions such as pressure, temperature, and treatment period are optimized to achieve uniformity of obtained monolayers on the substrates. We also proposed a selection rule for oxidation of either H-Si bond or Si-Si bond of hydrogen terminated silicon surfaces. These monolayer treatments control the fashion in which thin-films were formed by chemical vapor deposition (CVD). Deposition of tungsten by CVD proceeded on hydrogen terminated silicon surfaces while it does not on monoatomically nitirded silicon surfaces. The experimental result that monoatomic surface treatments provide a way to control thin-film formation processes is successfully applied for improvement of the Si02-film formation characteristics in an industrial process by a series of operation procedures that does not deviate from usual ones. The initial stages of CVD film formation processes are also susceptible to monolater treatment of substrates. The pillar structure of Al nuclear on a substrate was changed to continuous film by plasma sputtering treatment of the substrate.
In summary, we have realized the controlled way to perform monolayer treatment of substrate surfaces and applied it for controlling thin film formation processes.

Report

(4 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • 1996 Annual Research Report
  • Research Products

    (22 results)

All Other

All Publications (22 results)

  • [Publications] S.Takami: "Kinetic Study on Oxidation of Si (111) Surfaces using H_2O" Jpn.J.Appl.Phys.Part 1. 36(4A). 2288-2291 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Ishikawa: "Initial Growth of Chemical Vapor Deposited SiO_2" J.Appl.Phys.82(5). 2655-2661 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 石川 正彦: "TEOS/O_3系常圧熱CVDによるSiO_2初期成膜過程のAFM,XPSによる観察と形態変化メカニズム" 化学工学論文集. 23(5). 644-651 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Tsukamoto: "Marphology Evolution of SiO_2 Films Deposited by Tetrasthylorthosilicate 103 Atmospheric-Pressure Chemical Vapor Deposition on Thermal SiO_2" Jpn.J.Appl.Phys.Part2. 38(1A/B). L68-L70 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] D.Cheng: "Thermal desorption spectra of SiO_2 films deposited on Si and on thermal SiO_2 by tetraethylorthosilicate/O_3 atmospheric-pressure chemical vapor deposition" J.of Applied Physics. 84(accepted). (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Shirakawa: "Migration-coalescence of nanoparticlas during deposition of Au,Ag,Cu,and GaAs on amorphous SiO_2" J.Nanoparticle Research. 1(1)(印刷中). (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Seiichi TAKAMI: "Kinetic Study on Oxidation of Si (111) Surfaces using H_2O." Jpn.J.Appl.Phys.Part 1. 36 (4A). 2288-2291 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Masahiko ISHIKAWA: "Initial Growth of Chemical Vapor Deposited SiO_2." J.Appl.Phys.82 (5). 2655-2661 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Masahiko ISHIKAWA: "Observation of Initial Growth of SiO_2 by Thermal Atmospheric Pressure CVD with TEOS/O_3 by AFM/XPS and Morphological Change Mechanism." KAGAKU-KOGAKU-RONBUNSHU. 23 (5). 644-651 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Makoto HIRASAWA: "Growth mechanism of nanoparticles prepared by radio frequency sputtering." J.Appl.Phys.82 (3). 1404-1407 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Koji TSUKAMOTO: "Tetraethylorthosilicate vapor treatment for eliminating surface dependence in tetraethylorthosilicate/O_3 atmospheric-pressure chemical vapor deposition." Electrochemical and Solid-State Letters. 2 (1). 24-26 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Koji TSUKAMOTO: "Morphology Evolution of SiO_2 Films Deposited by Tetraethylorthosilicate/O_3 Atmospheric-pressure Chemical Vapor Deposition on Thermal SiO_2." Jpn.J.Appl.Phy.Part 2. 38 (1A/B). L68-L70 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Degang CHEN: "Thermal desorption spectra of SiO_2 films deposited on Si and on thermal SiO_2 by tetraethyorthosilicate/O_3 atmospheric-pressure chemical vapor deposition." J.of Applied Physics. 84 (accepted). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Hiroaki SHIRAKAWA: "Migration-coalescence of nanoparticles during deposition of Au, Ag, Cu, and GaAs on amorphous SiO_2." J.Nanoparticle Research. 1 (1) (in printing). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Tsukamoto: "Tetraethylorthosilicate vapor treatment for eliminating surface dependence in tetraethylorthosilicate/O_3 atmospheric-pressure chemical vapor deposition" Electrochemical and Solid-State Letters. 2 (1). 24-26 (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] K.Tsukamoto: "Morphotogy Evolution of SiO_2 films Deposited by Tetraethylorthosilicate/O_3 Atmospheric pressure Chemical Vapor Deposition on Thermal SiO_2" Jpn.J.Appl.Phys.Part2. 38 (1A/B). L68-L70 (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] D.Cheng: "Thermal Deserption Spectra of SiO_2 films deposited on Si and on the thermal SiO_2 by Tetraethylorthosilicate/O_3 atmospheric-pressure chemical vapor deposition" J.of Applied Physics. 84 (accepted). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.Shirakawa: "Migration-coalescence of nanoparticles during deposition of Au, Ag, Cu, and GaAs on amorphous SiO_2" J.Nanoparticle Research. 1 (1) (印刷中). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.Takami: "Kinetic Study on Oxidation of Si(111) Surfaces using H_2O" Jpn.J.Appl.Phys.,Part.1. 36(4A). 2288-2291 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Takami: "Monolayer Nitridation of Silicon Surfaces and Its Effects of Tungsten Chemical Vapor Deposition" MRS Symposium Proceeding Vol.V-11. 483-489 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Takami: "Contrall of Selective Tungsten Chemical Vapor Deposition by Monolayer Surface" J.Electrochem.Soc.142(4). 1355-1361 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Takami,Y.Egashira,and H.Kamiyama: "Kinetic Study on Oxidation of si(III) Surfaces using H_2O" Japanese Jaurnal of Applied Physics.

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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