| Project/Area Number |
08455013
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
FUJITA Shizuo Kyoto Univ., Fac.Engineering, Associate Professor, 工学研究科, 助教授 (20135536)
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| Co-Investigator(Kenkyū-buntansha) |
KAWAKAMI Yoichi Kyoto Univ., Fac.Engineering, Associate Professor, 工学研究科, 助教授 (30214604)
FUJITA Shigeo Kyoto Univ., Fac.Engineering, Professor, 工学研究科, 教授 (30026231)
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥6,900,000 (Direct Cost: ¥6,900,000)
Fiscal Year 1997: ¥2,700,000 (Direct Cost: ¥2,700,000)
Fiscal Year 1996: ¥4,200,000 (Direct Cost: ¥4,200,000)
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| Keywords | photoassisted growth / growth selectivity for photoirradiation / growth selectivity with photon energy / growth selectivity with temperature / ZnCdSSe / low dimensional structure / structure control / quantum structure |
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| Research Abstract |
This research was carried out aimed at developing a new technology for controlling fabrication of semiconductor low dimensional structures utilizing selective growth characteristics with photoassisted processes, which had been explored by our group. The results are summarized as follows ;
1.Growth processes with photoirradiation were investigated by means of mass spectroscopy during the growth, and we found that the growth proceeded with thermal decomposition of alkylzinc, its adsorption to the growth surface, and photocatalytic reaction.
2.The decomposition characteristics of alkylzinc and alkylcadmium were found to be different under photoirradiation, and this result allowed successful growth control of ZnCdSe and ZnCdS multilayr structures with turning on and off the irradiation. The well-defined structure of them was confirmed by x-ray diffraction, photoluminescence, and exciton-related optical properties.
3.The selectivity of growth on different underlying layr was investigated, and the result suggested that the growth was dominated both by thermal energy and photon energy. At a lower temperature the growth did not occur if the irradiation energy was lower than the bandgap, but it did at a higher temperaturu because a thin layr could be formed by the thermal energy which can cause the successive photocatalytic reactions.
The selective growth that the growth occured on ZnSe but not on ZnS was demonstrated with appropriate choose of the substrate temperature and the irradiation energy. This result showed that thelow dimentional structures with in-plane patterns could actually
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