| Project/Area Number |
08455146
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
SUGINO Takashi Osaka University, Department of Electrical Engineering, associate professor, 工学部, 助教授 (90206417)
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| Co-Investigator(Kenkyū-buntansha) |
HATTORI Reiji Osaka University, Department of Electrical Engineering, assistant, 工学部, 助手 (60221503)
SHIRAFUJI Junji Osaka University, Department of Electrical Engineering, professor, 工学部, 教授 (70029065)
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 1997: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1996: ¥7,100,000 (Direct Cost: ¥7,100,000)
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| Keywords | diamond / surface modification / H_2 plasm / O_2 plasma / cold cathode / field emission / metal / diamond contact / phosphorus-doped diamond |
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| Research Abstract |
Studies on modification of diamond surfaces by plasma process and its application to cold cathode are carried out. The following results are obtained.
[1] The electric field strength commencing electron emission increases for phosphorus (P)-doped polycrystalline diamond films, the surface of which is treated with O_2 plasma, while the electric field strength is decreased by H_2 plasma treatment. In the case when the rear face of diamond films is treated with O_2 plasma, however, the field emission characteristic is not recovered by the same H_2 plasma treatment. It is revealed that this is due to existence of dense grain boundaries.
[2] Temperature dependence of field emission characteristics is measured for P-doped and undoped polycrystalline diamond films. The turn-on voltage of the electron emission is reduced with increasing temperature for the P-doped diamond film. On the other hand, no variation in the turn-on voltage occurs with increasing temperature for the undoped diamond film. This behavior of the field emission characteristic is well explained by the internal electron emission based on the thermionic field emission model combined with the temperature dependence of the ionized donor concentration.
[3] Cathode electrodes are formed using metals with different work function on the surface of P-doped homoepitaxial diamond dilms treated with O_2 plasma. It is shown that the field emission characteristic depends on the work function of the cathode metals.
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