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Periodic Modulation of Superlattice by Atomic Layer Epitaxy and Its Application to synthesis of Novel Functional Materials

Research Project

Project/Area Number 08455154
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionThe Institute of Physical and Chemical research (RIKEN)

Principal Investigator

IWAI Sohachi  RIKEN,Semiconductor Laboratory, Advanced Researcher, 半導体工学研究室, 先任研究員 (40087474)

Co-Investigator(Kenkyū-buntansha) MEGURO Takashi  RIKEN,Semiconductor Laboratory, Advanced Researcher, 半導体工学研究室, 副主任研究員 (20182149)
ISSHIKI Hideo  The Univ.of Electro-communications, Department of Electronics Engineering, Resea, 電気通信学部, 助手 (60260212)
AOYAGI Yoshinobu  RIKEN,Semiconductor Laboratory, Chief Scientist, 半導体工学研究室, 主任研究員 (70087469)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥7,600,000 (Direct Cost: ¥7,600,000)
Fiscal Year 1997: ¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1996: ¥4,200,000 (Direct Cost: ¥4,200,000)
KeywordsAtomic Layer Epitaxy / MOVPE / Quasi-crystal / GaAs / Atomic layer superlattice / X-ray diffraction / Fibonacci progression / Self-limiting effect
Research Abstract

Electronic states in usual periodic structures are given by the periodicity like Bloch theorem. Introducing non-periodicity into the lattice, the electronic states with singular coherency of electron wavefunctions can be expected. We have focused on the periodic modulation (Fractal etc.) of lattice, and carried on the fablication and the characterization of periodic-modulated superlattices, as novel functional materials. The results of this study are summarized as follows.
(1)Development of atomic-layer manipulation technologies for superlattice : (GaAs)m(GaP)n and (AIP)m(GaP)n atomic-layer superlattices have been successfully realized by atomic layer epitaxy(ALE), and also the inter-diffusion between the mono-layer lattice has been discussed.
(2)Periodic modulation of superlattice with atomic-layer accuracy : GaAs/GaP and AlP/GaP periodic-modulated superlattices have been successfully realized with atomic-layer accuracy by the ALE technologies. Periodic, quasi-periodic (Fractal), random … More , and multi-periodic structures have been used as the modulated structures, and especially Fibonacci progression has been used as Fractal structures.
(3)X-ray analysis of the periodic-modulated superlattices : The XRD pattern of quasi-periodic superlattice shows no periodicity but self-similar geometry, and is consistent with the FFT spectrum of a Fractal structure. Also the X-ray reflection measurement of multi-periodic superlattice shows that the reflection wavelength can be controlled with sub-monolayer accuracy by modulation of the periodicity. This suggests the possibility of application to X-ray mirrors.
(4)Optical characterization of electronic states in the periodic-modulated superlattices : Photo-reflectance spectrum of quasi-periodic, random superlattices show peculiar splitting of the subband (electronic states) in comparison with that of the periodic lattice, and are consistent with a transfer matrix calculation for the lattices. This result suggests that the control of electronic state can be possible artificially due to the periodic modulation using the ALE technologies.
(5)Application to X-ray mirrors : We have discussed the application of periodic modulation for the lattice to X-ray mirror. Introducing the multiple period into atomic layer superlattice, the reflection wavelength can be controlled arbitrary with sub-monolayer accuracy that is needed to X-ray mirrors. Less

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (31 results)

All Other

All Publications (31 results)

  • [Publications] H.Isshiki et al.: "Quantum wire structures incorporating (GaAs)m(GaP)n short-period superlattice fabricated by atomic layer epitaxy" Applied Surface Science. 112. 122-126 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Meguro et al.: "Control of ALE window of GaAs employing active hydrogen" Applied Surface Science. 112. 118-121 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.S.Lee et al.: "Selective growth on multi-step array on (111) A vicinal surface by atomic layer epitaxy" Applied Surface Science. 112. 132-137 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishii et al.: "Reflection-wavelength control method for layer-by-layer controlled multilayer mirrors" Applied Optics. 36. 2152-2156 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishii et al.: "Atomic layer epitaxy of AIP and its application to X-ray mirror" Journal of Crystal Growth. 180. 15-21 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 一色 他: "原子層成長による原子層フラクタル超格子の作製と評価" 信学技報(光量子エレクトロニクス). 20. 13-18 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishii et al.: "Observation and control of surface morphology of AIP grown by a atomic layer epitaxy" Applied Physics Letters. 71. 1044-1046 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Isshiki et al.: "(GaAs)m(GaP)n low dimensional short-period superlattice fabricated by atomic layer epitaxy" Microelectronics Engineering. 43/44. 301-307 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishii et al.: "Surface reaction mechanism and morphology control in AIP atomic layer epitaxy" Thin Solid Films. 318. 6-10 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Isshiki et al.: "Conduction subband formation in (GaAs)_m (GaP)_n Fractal structured atomic-layer-superlattice grown by atomic layer epitaxy" Proc.Of ICPS'24 The Physics of Semiconductors. in press. (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Isshiki et al.: "Quantum wire structures incorporating (GaAs)m(GaP)n short-period superlattice fabricated by atomic layer epitaxy" Applied Surface Science. 112. 122-126 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Meguro et al.: "Control of ALE window of GaAs employing active hydrogen" Applied Surface Science. 112. 118-121 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.S.Lee et al.: "Selective growth on multi-step array on (111)A vicinal surface by atomic layer epitaxy" Applied Surface Science. 112. 132-137 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishii et al.: "Reflection-wavelength control method for layer-by layer controlled multilayer mirrors" Applied Optics. 36. 2152-2156 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishii et al.: "Atomic layer epitaxy of AlP and its application to X-ray mirror" Journal of Crystal Growth. 180. 15-12 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Isshiki et al.: "Fabrication and Characterization of GaAs/GaP Atomic Layer Fractal Superlattice Grown by Atomic Layer Epitaxy" TECHNICAL REPORT OF IECE.LQE97-20. 13-18 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishii et al.: "Observation and control of surface morphology of AlP grown by atomic layer epitaxy" Applied Physics Letters. 71. 1044-1046 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Isshiki et al.: "(GaAs)m(GaP)n low dimensional short-period superlattice fabricated by atomic layer epitaxy" Microelectronics Engineering. 43/44. 301-307 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishii et al: "Surface reaction mechanism and morphology control in AlP atomic layer epitaxy" Thin Solid Films. 318. 6-10 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Isshiki et al.: "Conduction subband formation in (GaAs)m (GaP)n Fractal structured atomic-layer-superlattice grown by atomic layer epitaxy" Proc.Of ICPS'24 The Physics of Semiconductors. (in press). (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Isshiki et al.: "Quantum wire structures incorporating (GaAs)m(GaP)n short-period superlattice fabricated by atomic layer epitaxy" Applied Surface Science. 112. 122-126 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Meguro et al.: "Control of ALE window of GaAs employing active hydrogen" Applied Surface Science. 112. 118-121 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] J.S.Lee et al.: "Selective growth on multi-step array on (111)A vicinal surface by atomic layer epitaxy" Applied Surface Science. 112. 132-137 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Ishii et al.: "Reflection-wavelength control method for layer-by-layer controlled multilayer mirrors" Applied Optics. 36. 2152-2156 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Ishii et al.: "Atomic layer epitaxy of AIP and its application to X-ray mirror" Journal of Crystal Growth. 180. 15-21 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 一色 他: "原子層成長による原子層フラクタル超格子の作製と評価" 信学技報(光量子エレクトロニクス). 20. 13-18 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Ishii et al.: "Observation and control of surface morphology of AIP grown by atomic layer epitaxy" Applied Physics Letters. 71. 1044-1046 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Isshiki et al.: "(GaAs)m(GaP)n low dimensional short-period superlattice fabricated by atomic layer epitaxy" Microelectronics Engineering. (to be published). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Isshiki et al.: "Quantum wire structures incorporating (GaAs) m (GaP) n short-period superlattice fabricated by atomic layer epitaxy" Applied Surface Science. (in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Meguro et al.: "Control of ALE window of GaAs employing active hydrogen" Applied Surface Science. (in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] J.S.Lee et al.: "Selective growth on multi-step array on (lll) A vicinal surface by atomic layer epitaxy" Applied Surface Science. (in press). (1997)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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