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STUDY OF ULTRA-HIGH-SPEED CMOS USING FULLY SELF-ALIGNED METALLIZATION

Research Project

Project/Area Number 08455157
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

YOKOYAMA Michio  Tohoku Univ., Res.Inst.Elect.Commun., Research Associate, 電気通信研究所, 助手 (40261573)

Co-Investigator(Kenkyū-buntansha) MASU Kazuya  Tohoku Univ., Res.Inst.Elect.Commun., Associated Professor, 電気通信研究所, 助教授 (20157192)
TSUBOUCHI Kazuo  Tohoku Univ., Res.Inst.Elect.Commun., Professor, 電気通信研究所, 教授 (30006283)
Project Period (FY) 1996 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥7,100,000 (Direct Cost: ¥7,100,000)
Fiscal Year 1998: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1997: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 1996: ¥5,200,000 (Direct Cost: ¥5,200,000)
KeywordsSelf-Aligned Process / Metallization / Selective Al-CVD / Parasitic resistances / Silicide / Self-aligned barrier layer / RF-CMOS / GHz CMOS amplifier / 選択AlCVD / TiNバリア / MOSFET / プラズマ窒化 / 選択Al-CVD
Research Abstract

In sub-0.1um MOSFETs, interconnect parasitics are drastically limiting the performance improvement. MOSFETs with wide gate width are essentially required for an application to high current-drivability devices such as word-line drivers, gate array devices and analog RF devices. In this work, in order to reduce the parasitic resistances, fully-self-aligned-metallization (FSAM) MOSFET using conventional salicide and selective Al-CVD techniques are proposed and investigated.
FSAM technology features ; (1) low contact resistivity of TiSi_2/Si, (2) self-aligned barrier layer formed by plasma nitridation of TiSi_2 surface, and (3) low sheet resistance of CVD-Al layer. At first, we have developed a self-aligned barrier layer formation method using N2 plasma nitridation of conventional silicided surface. It is confirmed that the 10-nm nitrided barrier layer is Ti-Si-N ternary amorphous layer. Furthermore, it is found that the Ti-Si-N layer acts as a diffusion barrier even after the 450゚C thermal treatment.
On the self-aligned barrier layer, aluminum films are successfully deposited in the same process chamber without breaking the vacuum. It is found that the aluminum films are selectively deposited on the conductive barrier layer.
For an application to analog RF-CMOS, high-frequency performance of wide-gate FSAM MOSFETs has been evaluated using RF simulation. Simulation results have shown that a transition frequency f_T of FSAM devices increases even below 0.2um gate length, while that of conventional silicide devices decrease with shrinkage of gate length down to 0.2um because of high parasitic resistances.
Furthermore, circuit design of RF-CMOS power amplifier for mobile phone has been investigated, and GHz-band high-efficiency CMOS push-pull amplifier has been proposed.

Report

(4 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • 1996 Annual Research Report
  • Research Products

    (53 results)

All Other

All Publications (53 results)

  • [Publications] H.Matsuhashi: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Matallization Metal-Oxide-Semiconductor Field-Effect-Transistor" Jpn.J.Appl.Phys.37. 3264-3267 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.-H.Lee: "Crystallographic Structure and Contact Resistance of Self-Aligned Nitrided Barrier Layers on TiSi2 for Fully Self-Aligned Metallization MOSFETs" Abstracts of Advanced Metallization and Interconnect Systems for ULSI Applications in 1998, Colorad Springs. 11-12 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Matallization MOSFET" Ext.Abst.1997 Int.conf.Solid.state Device and Materials. 124-125 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi: "Superiority of DMAH to DMEAA for Al CVD Technology" Abstracts of Advanced Metallization and Interconnect Systemsr for ULSI Applications in 1997,San Diego. 205-210 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Yokoyama: "Reduction of Parasitic Resistances in Wide-Gate Fully-Self-Aligned-Metallization(FSAM)MOSFET" Abstracts of Advanced Metallization and Interconnect Systems for ULSI Applications in 1997,San Diego. 185-190 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi: "Mirror-Like Surface Morphology of CVD-Al on TiN by ClF3 Pretreatment" Advanced Metallization and Interconnect Systems for ULSI Applications in 1995. 667-668 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Masu: "Multilevel Metallization Based on Al CVD" Digest of 1996 Symposium on VLSI Technology. 44-45 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi: "Self-Aligned Barrier Layer Formation for Fully-Selfaligned-Metallization MOSFET" Advanced Metallization and Interconnect Systems for ULSI Applications in 1996. 253-256 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] J.-H.Chung: "Fluorine Termination Effect on Al CVD" Advenced Metallization and Interconnect Systems for ULSI Applications in 1996. 43-49 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al.: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Alligned Metal-Semiconductor Field-Effect-Transistor" Jpn.J.Appl.Phys.Vol.37-6A. 3264-3267 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.-H.Lee, et al.: "Crystallographic Structure and Contact Resistance of Self-Aligned Nitrided Barrier-Layer on TiSi2 for Fully Self-Aligned Metallization MOSFET" Advanced Metallization and Interconnect Systems for ULSI Applications in 1998 : US Session, Colorado, Oct.8. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al.: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization MOSFET" Ext.Abst.1997 Int.Conf.Solid State Device and Materials, Hamamatsu. 124-125 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Yokoyama, et al.: "Reduction of parasitic resistances in wide-gate fully-self-aligned-metallization (FSAM) MOSFET" Advanced Metallization and Interconnect Systems for ULSI Applications in 1997 : US Session, San Diego, Oct.1. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Masu, et al.: "Multilevel Metallization Based on Al CVD" Digest of Technical Papers 1996 Symp.on VLSI Technology, Honolulu. 44-45 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al.: "Self-Aligned Barrier Layer Formation for Fully Self-Aligned Metallization MOSFET" Proc.of Advanced Metallization and Interconnect Systems for ULSI Applications in 1996, Boston. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.-H.Lee, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" IEICE Technical Report. SDM98-127 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Yokoyama, et al.: "Miniaturized MOSFET with Fully-Self-Aligned Metallization for GHz-band Power Amplifier" IEICE Technical Report. SDM98-130 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Yokoyama, et al.: "Reduction of Parasitic Resistances in FSAM-MOSFET" IEICE Technical Report. SDM97-96 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Gotoh, et al.: "Fully Self-aligned Metallization MOSFET using selective Al CVD technology" IEICE Technical Report. SDM96-135 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Yokoyama, et al.: "High Efficiency RF Power MOSFET with Fully Self-Aligned Metallization technique by using Selective Al-CVD" Extended Abstracts (The 59th Autumn Meeting, 1998) ; The Japan Society of Applied Physics. 16p-p10-13.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Nishimura, et al.: "The Improvement of Deposition Rate for Al-CVD Using Direct Liquid Injection System" Extended Abstracts (The 46th Spring Meeting, 1999) ; The Japan Society of Applied Physics and Related Societies. 29pZQ-5.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] M.Yokoyama, et al.: "Fabrication of Silicon Analog RF-CMOS Devices" Extended Abstracts (The 46th Spring Meeting, 1999) ; The Japan Society of Applied Physics and Related Societies. 31aZM-3.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Morimoto, et al.: "High Frequency Characteristics of MOSFETs with Fully Self Aligned Metallization Process" Extended Abstracts (The 58th Autumn Meeting, 1997) ; The Japan Society of Applied Physics. 3p-G-12.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.-H.Lee, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 45th Spring Meeting, 1998) ; The Japan Society of Applied Physics and Related Societies. 29a-N-3.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] R.Tajima, et al.: "Analysis of Parasitic Resistance of Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 57th Autumn Meeting, 1996) ; The Japan Society of Applied Physics. 9a-N-7.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Gotoh, et al.: "ClF3 pre-cleaning in Al-CVD (V)" Extended Abstracts (The 57th Autumn Meeting, 1996) ; The Japan Society of Applied Physics. 8a-N-5.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 57th Autumn Meeting, 1996) ; The Japan Society of Applied Physics. 9a-N-6.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] K.Masu, et al.: "Surface reaction of Al CVD" Extended Abstracts (The 57th Autumn Meeting, 1996) ; The Japan Society of Applied Physics. 8pQ-2.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] C.-H.Lee, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 44th Spring Meeting, 1997) ; The Japan Society of Applied Physics and Related Societies. 28a-PB-22.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] H.Matsuhashi, et al.: "Self-align formation of barrier layer for Fully Self-Aligned Metallization MOSFET" Extended Abstracts (The 44th Spring Meeting, 1997) ; The Japan Society of Applied Physics and Related Societies. 28a-PB-23.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] 横山 道央: "FSAM-MOSFETを用いた高周波パワーアンプ" 電子情報通信学会技術報告(シリコン材料デバイス研究会). SDM-98-130. 49-53 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] H.Matsuhashi: "Self-Aligned 10-nm Barrier Layer Formation Technology for Fully Self-Aligned Metallization Metal-Oxide-Semiconductor Field-Effect-Transistor" Jpn.J.Appl.Phys.37. 3264-3267 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] C.-H.Lee: "Crystallographic Structure and Contact Resistance of Self-Aligned Nitrided Barrier Layers on TiSi2 for Fully Self-Aligned Metallization MOSFETs" Advanced Metallization and Interconnect Systems for ULSI Applications in 1998,Corrolad Springs. (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 李 昌勲: "完全自己整合メタライゼーションMOSFETにおけるバリア層の自己整合形成" 電子情報通信学会技術報告(シリコン材料デバイス研究会). SDM-98-127. 29-34 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 西村 隆正: "DMAHのDMEAAに対する優位性" 第59回応用物理学会学術講演会予稿集. 58. 15aZL11 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 西村 隆正: "Direct Liquid Injection Systemを用いたAl CVD 堆積速度の向上" 第46回応用物理学関係連合講演会予稿集. 46. 29aZQ5 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 横山 道央: "完全自己整合メタライゼーション技術を用いたRF-MOSFETにおける高効率化" 第59回応用物理学会学術講演会予稿集. 58. 16p10-13 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] 横山 道央: "シリコンアナログRF-CMOSデバイスの作製" 第46回応用物理学会学術講演会予稿集. 46. 31aZM3 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] M.Yokoyama: "Reduction of Parasitic Resistances in Wide-Gate Fully-Self-Aligned-Metalization(FSAM) MOSFET" Advanced Metalization and lnterconnect Systems for ULSI Applications in 1997,San Diego. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 横山 通央: "FSAM-MOSFETにおける寄生抵抗低減効果" 電子情報通信学会技術報告(シリコン材料デバイス研究会). SDM97-96. 27-31 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Matsuhashi: "Self-Aligned 10-nm Barrier Layar Formation Technology for Fully-Self-Aligned-Metalization MOSFET" Ext.Abst.1997 lnt.Conf.Solid State Device and Materials,Hamamatsu. 124-125 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 森本 明大: "完全自己整合メタライゼーションの高周波MOSFETへの応用" 第58回応用物理学会学術講演会予稿集. 58. 3pG12 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 李 昌勲: "完全自己整合メタライゼーションMOSFETにおけるバリア層の自己整合形成" 第45回応用物理学関係連合講演会予稿集. 45(発表予定). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H. Matsuhashi: "Self-Aligned Barrier Layer Formation for Fully-SelflAligned Metallization MOSFET" Abstracts of Advanced Metallization and Interconnect Systems for ULSI Applications. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 益 一哉: "Al-CVD技術による完全自己整合メタライゼーション" 電気学会電子材料研究会. EFM-96-12. 17-23 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 横山 道央: "選択Al CVD技術を用いた完全自己整合メタライゼーションMOSFETにおける寄生抵抗解析" 平成8年度電気関係学会東北支部連合大会. 337 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 後藤 晶央: "選択Al CVD技術を用いた完全自己整合メタライゼーションMOSFET" 電子情報通信学会技術報告(シリコン材料・デバイス研究会). SDM-96-135. 25-30 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 田嶋 陵: "完全自己整合メタライゼーションMOSFETにおける寄生抵抗解析" 1996年秋季 第57回応用物理学会学術講演会(1996年9月). 9aN-7 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 後藤 晶央: "選択Al-CVD技術におけるプラズマレスCIF3表面クリーニング(V)" 1996年秋季 第57回応用物理学会学術講演会(1996年9月). 8aN-5 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 益 一哉: "Si上のAl CVDにおける表面反応" 1996年秋季 第57回応用物理学会学術講演会(1996年9月). 8pQ-2 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 松橋 秀樹: "完全自己整合メタライゼーションMOSFETにおけるバリア層の自己整合形成" 1996年秋季 第57回応用物理学会学術講演会(1996年9月). 9aN-6 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 李 昌勲: "完全自己整合メタライゼーションにおけるバリア層の自己整合形成〜XPSにおけるプラズマ窒化したシリサイド表面の化学状態評価〜" 1997年春季 第44回応用物理学関連連合講演会(1997年3月). (講演予定). (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 松橋秀樹: "完全自己整合メタライゼーションにおけるバリア層の自己整合形成〜N2プラズマによって形成した窒化バリア層の極薄接合層への適用〜" 1997年春季 第44回応用物理学関連連合講演会(1997年3月). (講演予定). (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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