| Project/Area Number |
08455161
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | University of Tokyo |
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Principal Investigator |
HIRAMOTO Toshiro University of Tokyo, VLSI Design and Education Center, Associate Professor, 大規模集積システム設計教育研究センター, 助教授 (20192718)
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| Co-Investigator(Kenkyū-buntansha) |
SAITO Toshio University of Tokyo, Center for collaborative, Research Associate, 国際・産学共同研究センター, 助手 (90170513)
HIRAKAWA Kazuhiro University of Tokyo, Institute of Industrial Science, Associate Professor, 生産技術研究所, 助教授 (10183097)
FUJITA Hiroyuki University of Tokyo, Institute of Industrial Science, Professor, 生産技術研究所, 教授 (90134642)
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥7,600,000 (Direct Cost: ¥7,600,000)
Fiscal Year 1997: ¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 1996: ¥4,200,000 (Direct Cost: ¥4,200,000)
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| Keywords | SOI / MOSFET / Charge Pumping / Oxidation / Interface Traps / Silicon Oxide / MOS / LSI / 拡散 / Si |
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| Research Abstract |
Thin film Silicom-on-Insulator (SOI) technology has attracted much attention for high-speed and low-power device applications. Usually, the process for SOI device fabrication is compatible with conventional bulk devices. However, the SOI device has one more silicon/oxide interfaces and the mechanisms of oxidation and other process in SOI substrates are not necessarily the same as the bulk materials. The purpose of this study is to investigate the oxidation mechanisms and the interface trap characteristics in SOI structures. First, a new technique is developed to measure the interface traps in SOI using charge pumping method. The conventional charge pumping method are not applied to SOI because of high resistivity of body region. We fabricated SOI structures with body terminal. In our new method, the pulse voltage is applied not only to the gate but also the body. The body pulse suppresses the reduction of the charge pumping current and enables us to accurately measure the interface traps in SOI devices. Next, a new technique is also developed to measure the energy distribution of the interface traps in SOI using modified charge pumping method. The oxidation mechanisms and interface trap characteristics are intensively investigated by above mentioned new technique and it is suggested that the interface of SOI structure is not degraded compared with the interfaces in convensional bulk materials.
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