| Project/Area Number |
08455296
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
YAMANE Masayuki Tokyo Institute of Technology, 工学部, 教授 (40016382)
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| Co-Investigator(Kenkyū-buntansha) |
YANO Tetsuji Tokyo Institute of Technology, 工学部, 助手 (90221647)
SHIBATA Shuichi Tokyo Institute of Technology, 工学部, 助教授 (00235574)
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥7,700,000 (Direct Cost: ¥7,700,000)
Fiscal Year 1997: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 1996: ¥6,800,000 (Direct Cost: ¥6,800,000)
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| Keywords | Interfacial polymerization / Sol-gel method / Glass film / Waveguide |
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| Research Abstract |
The formation of thick silicate glass film for a planer wavegide has been studied by an interfacial polymerization focusing on the conditions to reduce the sintering temperature of a gel film. The mechanism of gel film formation from ethylsilicate precursor at the existence of various kinds of catalyst was investigated in the first year. The nucleation and growth of silica particles comprising the film proceeded in the organic phase immediately above the interface, showing that a base catalyst having a high solubility such as triethylamine is effective. The size of particles comprising the film was, however, too large to be applied to a film formed on a silicon substrate, suggesting that the addition of boron or germanium was necessary to reduce the sintering temperature. The gel film formation from a precursor prepared from tetramthoxysilane and trimethylborate was investigated in the second year in order to reduce the sintering temperature of the film. A good reproducibility of composition and thickness was obtained for the gel formed using triethylamine as a catalyst. The film of SiO_2-B_2O_3 system was sintered to a pore free glass film at 1100ﾟC,which is low enough for the application to the planer waveguide on silicon substrate.
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