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Developement of new hydrogen analysis method by combining classical methods and its application to the H/Si systems

Research Project

Project/Area Number 08555009
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 表面界面物性
Research InstitutionOsaka University

Principal Investigator

OURA Kenjiro  Dept.of Eng., Osaka University, Professor, 工学部, 教授 (60029288)

Co-Investigator(Kenkyū-buntansha) ISHIDA Hideyuki  To-ray Research, Researcher, 構造化学研究部, 部長(研究員)
ITOH Takashi  Fujitsu Co., Researcher, 半導体研究部, 部長(研究員)
WATAMORI Michio  Dept.of Eng., Osaka University, Research Associate, 工学部, 助手 (80222412)
KATAYAMA Mitsuhiro  Dept.of Eng., Osaka University, Lectuerer, 工学部, 講師 (70185817)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥20,400,000 (Direct Cost: ¥20,400,000)
Fiscal Year 1997: ¥4,400,000 (Direct Cost: ¥4,400,000)
Fiscal Year 1996: ¥16,000,000 (Direct Cost: ¥16,000,000)
KeywordsSurface Hydrogen / Interface Hydrogen / Ion Beam Analysis / Sputtering / multi-hydrogen analysis
Research Abstract

We have reported that epitaxial growth mode of thin metallic films on the Hydrogen-terminated Si surfaces were slightly different from that on the clean Si surfaces. Our subject on this research project supported by a Grant-in-Aid for Scientific Research is to develop a new hydrogen analysis technique by combined the classical methods and apply to the real hydrogen-silicon systems. The new findings are as follows.
(1) Combining the low energy electron diffraction (LEED) and the low energy ion scattering (ISS) containing detection of the absolute volume of hydrogen using the recoil detection system causes the powerful tool to investigate the hydrogen induced epitaxy. We also used the STM for the ex-situ observation of surface morphology.
(2) Not only MBE methods but also sputtering methods were applied to make metal epitaxial films on Si substrates to investigate the role of hydrogen on the films.
(3) Initial stage of 2-dimensional superlattice induced by specific materials such as Ag, Pb and In changes to 3-dimensional intrinsic cluster growth after the Hydrogen termination.
These results cause the key of better understanding of modification of heteroepitaxy by the Hydrogen termination.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] K.Oura 他4名: "Atomic-hydrogen-induced Ag cluster formation on Si(III)-√<3>×√<3>-Ag surface observed by scanning Tunneling microscopy" J.Vac.Sci.Technol.B14. 988-991 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Oura 他4名: "Thin-film growth mode analysis by low energy ion scattering" Surface Science. 363. 161-165 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Watamori 他3名: "A new method for the detection of native oxide on Si with combined use of ^<16>O(αα)^<16>O resonance and channeling" Applied Surface Science. 113/114. 403-407 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Ohba 他5名: "STM observation of Ag clustering on hydrogen-terminated Si(100) surfaces" Applied Surface Science. 121/122. 191-194 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] A.A.Saranin 他8名: "Structural model for the Si(III)-4×1-In reconstruction" Physical Review B. 56. 1017-1020 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] A.A.Saranin 他6名: "STM tip-induced diffusion of In atoms on the Si(III)√<3>×√<3>-In surface" Physical Review B. 56. 7449-7454 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Oura et.al.: "Atomic-Hydrogen-Induced Ag Cluster Formation on Si (111)-ROO<3>*ROO<3>-Ag Surface Observed by Scanning Tunneling Microscopy" Journal of Vacuum, Science and Technology. B14. 988-991 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Oura et.al.: "Thin-film growth mode analysis by low energy ion scattering" Surface Sci.363. 161-165 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Waramori et.al.: "A new method for the detection of native oxide on Si with combined used of ^<16>O (alpha, alpha) ^<16>O resonance and channeling" Applied Surface Science. 113/114. 403-407 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Ohba et.al.: "STM observation of Ag clustering on hydrogen-terminated Si (100) surfaces" Applied Surface Science. 121/122. 191-194 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] A.A.Saranin et.al.: "Atructural model for the Si (111)-4*1-In reconstruction" Physical Review. B56. 1017-1020 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] A.A.Saranin et.al.: "STM tip-induced diffusion of In atoms on the Si (111)-ROO<3>*ROO<3>-In surface" Physical Review. B56. 7449-7454 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Watamori 他3名: "A New method for the detection of native oxide on Si with conbined use of ^<16>O(α,α)^<10>O resonance and channeling" Applied Surface Science. 113/114. 403-407 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] J.-T.Ryu 他4名: "Adsorption of atomic hydrogen on the Si(100)-(2×1)-Sb surface" Japanese Journal of Applied Physics. 36. 4435-4439 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Ohba 他5名: "STM observation of Ag clustering on hy drogen-terminated Si(100) Surfaces" Applied Surface Science. 121/122. 191-194 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Fuse 他5名: "Quasi-medium energy ion scattering spectroscopy obervation of suaface segregation of Ge 8-doped layerduring Si moleculor beam epitome" Surface Science. 393. L93-L98 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] A.A.Saranin 他8名: "Structural model for the Si(111)-4×1-In reconstruction" Physical Review B condensed matter. 56 no.3. 1017-1020 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] A.A.Saranin 他6名: "STM tip-induced diffusion of In atoms on the Si(111) √<3>×√<3>-In surface" Physical Roveiw B condensed matter. 56 no.12. 7449-7454 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Oura 他4名: "Atomic-hydrogen-induced Ag clusterformation on Si(111)-√<3>×√<3>-Ag surface observed by scanning tunneling microscopy" J.Vac.Sci.Technol.B14. 988-991 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Oura 他4名: "Thin-film growth-mode analysis by low energy ion scattering" Surt.Sci.363. 161-165 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Oura 他3名: "Observation of the diffusion of Ag atoms through and a-Si layer on Si(111)by low energy ion scattering" Surt.Sci.363. 156-160 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] U.Katayama 他3名: "Influence of surfactant coverage on epitaxial growth of Ge on Si(001)" Physical Review. B54. 8600-8604 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Watamori 他2名: "The effect of oxygen content on electrical and optical propertres of indium tin oxide films fabricated by reactive aputtering" Thin Solid Films. 281/282. 206-208 (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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