| Project/Area Number |
08555051
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Thermal engineering
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
INOUE Takayoshi T.I.T., Dept.of Mech.-Aerospace Eng., Associate professor, 工学部, 助教授 (20193592)
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| Co-Investigator(Kenkyū-buntansha) |
ITO Hiroki Mitsubishi Electric, Itami factory, Senior Researcher, 伊丹製作所, 主任研究員
SUZUKI Yuji T.I.T., Dept.of Mech.-Aerospace Eng., Assistant professor, 工学部, 助手 (20242274)
NAKABEPPU Osamu The Univ.of Tokyo, Dept.of Mech.Eng., Assistant professor, 大学院・工学系研究科, 助手 (50227873)
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥4,200,000 (Direct Cost: ¥4,200,000)
Fiscal Year 1997: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 1996: ¥3,000,000 (Direct Cost: ¥3,000,000)
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| Keywords | Velocity Selector / Translational Energy / Metal atom / Deposition / Thin film |
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| Research Abstract |
To study the control of the thin film condensation process with the translational energy of incident atom, crystalline structures of Bi_2Te_3 films and Bi, Te films, which are deposited on (001) NaCl, (001) MgO and glass by the vacuum deposition method with a Hostettler-Bernstien velocity selector, have been investigated by measurement thermoelectric power of film and the observation by a transmission electron microscopy. Thin films are affected by not only substrate temperature but also velocity of incident atoms greatly. We could obtain good thermoelectric element when we made films at a certain substrate temperature with velocity selector. However we could not clarify the effect of incident frequency on the deposition process, because it is difficult to conduct experiments at the high incident frequency with a velocity selector. Thus a molecular dynamics simulation has been performed to investigate the effects of incident velocity, substrate temperature and frequency of incident on the condensation phenomena in the deposition process of Kr atoms on Ar substrate. Substrate temperature and velocity of incident atom are affect the growth rate of nucleation and reevaporation of deposited atoms. Further those affect the structure of deposited film in the simulation. At high substrate temperature structure of thin film is broken, however at a certain substrate temperature, small incident velocity and low incident frequency, crystals grow with characteristic anisotropy on the substrate.
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