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Developement of Contactless and Non-Destructive Capacitance-Voltage Measurement System in Ultra-High Vacuum

Research Project

Project/Area Number 08555072
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

HASEGAWA Hideki  Hokkaido Univ., Grad.School of Electron.and Infor.Eng., Pro., 工学研究科, 教授 (60001781)

Co-Investigator(Kenkyū-buntansha) SAKAI Takamasa  Dainippon Screen Mfg.Co., Ltd., Dev.Chief, 電子機器事業本部開発部, 課長(研究職)
FUHIKURA Hajime  Hokkaido Univ., Graduate School of Electron.and Infor.Eng., Res.Ass., 工学研究科, 助手 (70271640)
HASHIZUME Tamotsu  Hokkaido Univ., Graduate School of Electron.and Infor.Eng., Ass.Pro., 工学研究科, 助教授 (80149898)
福井 孝志  量子界面エレクトロニクス研究センター, 教授 (30240641)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥6,000,000 (Direct Cost: ¥6,000,000)
Fiscal Year 1997: ¥6,000,000 (Direct Cost: ¥6,000,000)
Keywordscontactless C-V / UHV-based system / surface state / interface state / Fermi level pinning / hydrogen-terminated surface / ultrathin insulator / ECR plasma / oxynitride film / 非接触C-V / 半導体自由表面 / 極薄絶縁膜 / トンネル絶縁膜 / 原子スケール表面制御
Research Abstract

The purpose if this rsearch is to develop the "Contactless and Non-Destructive Capacitance-Voltage (C-V) Measurement System" for characterization of a conduction type, an impurity profile and a surface state density distribution of semiconductor materials in ultra-high vacuum (UHV) environment and to study various types of semiconductor surfaces such as reconstructed surfaces, processed surfaces, surfaces covered with ultrathin insulating films, etc. The main results obtained are listed below :
(1) The system consists of four parts as follows : (a) An UHV chamber with a sample transfer system and a pump system, (b) a field plate which can maintain a parallelism and a constant distance of 100-300nm from a sample surface by piezo-mechanism with a capacitance feedback, (c) a UHV gap measurement part based on the optical method utilizing change in reflectivity due to penetration of evanescent wave (the Goos-Haenchen effect) and (d) a controller including C-V meter. The base pressure of the … More chamber was within the range of 10^<-10> Torr. The resolutions of a measured capacitance of 0.2fF and a UHV gap distance of 1nm were achieved, respectively.
(2) The validity of the system was checked by using a SiO_2/Si metal oxide semiconductor (MOS) system. The obtained contactless C-V curve was well in agreement with the calculated ideal C-V curve.
(3) The hydrogen-terminated Si surfaces showed the Fermi level pinning phenomena due to a high density of discrete surface state lying at 0.6eV above the valence band.
(4) It was found that the Si surfaces covered with ultrathin oxides formed by chemical and thermal processes at temperatures below 400゚C had high-density interface states with narrow U-shaped continuous distributions, resulting in the Fermi level pinning near the hybrid orbital charge neutrality level.
(5)The oxynitrided Si surface by ECR N_2O plasma was found to be pinning free, showing a wide, U-shaped, continuous interface state distribution with a minimum value of 1.0_x10^<11> eV^<-1>cm^<-2>. The formation of phase-separated Si_3N_4/SiO_2 interfacial structure was responsible for realization of the pinning free interface.
(6) Contactless C-V results directly showed strong surface Fermi level pinning at the molecular-beam-epitaxy (MBE) grown GaAs (001) (2x4) surfaces, and the observed pinning behavior cannot be explained by the "kink-acceptor model". Less

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (126 results)

All Other

All Publications (126 results)

  • [Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si(111)Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" apanese Journal of Applied Physics. 36. 1453-1459 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. (in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hashizume: "In-situ Contactless Characterization of Microscopic and Microscopic Properties of Si-doped MBE-Grown(2×4)GaAs Surfaces" Japanese Journal of Applied Physics. 37(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 37(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface RecombinationVelocity" Japanese Journal of Applied Physics. 37(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa: "Interface-Controlled Schottky Barrierson InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Pewer HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned(001)InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs(001)-(2×4) Surface" Japanese Journal of Applied Physics. 37(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron TransistorsBased on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. 37(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124(in press). 599-602 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon InterfaceControl Layer" Applied Surface Science. 123/124(in press). 615-618 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated by Sillicon Inerface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Fujikura: "Formation of Two-Dimensional Arrays ofInP-Based InGaAs Quantum Dots on Pattemed Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Okada: "Basic Control Characteristics of NovelSchottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurementsin GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Ishikawa: " Kink defects and fermi level pinning on(2×4)reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and X-ray photoelectron spectroscopy" Journal of Vacuum Science and Technology B. 15. 1163-1172 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires HavingSilicon Interlayer-Based Edge Passivation andIts Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge QuantumWires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Kihara: " Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam cpitaxially grown(2×4)reconstructed(001)InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hashizume: " Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grownat Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Yoshida, T.Hashizume and H.Hasegawa: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si (111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Okada, T.Hashizume, H.Fujikura and H.Hasegawa: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" JSolid State Electronics. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hashizume, Y.Ishikawa, T.Yoshida and H.Hasegawa: "In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2x4) GaAs Surfaces" Japanese Journal of Applied Physics. (in press). 37 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Fujikura and H.Hasegawa: "Controlled Formation of Narrow and Uniform InP-Based InGaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. (in press). 37 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] B.Adamowicz and H.Hasegawa: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. (in press). 37 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] N.Tsurumi, Y.Ishikawa and H.Hasegawa: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layr on GaAs (001) - (2x4) Surface" Japanese Journal of Applied Physics. (in press). 37 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Satoh, S.Kasai and H.Hasegawa: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. (in press). 37 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. (in press). 123-124 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hashizume, K.Ikeya and H.Hasegawa: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layr Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. (in press). 123-124 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Takahashi, T.Hasizume and H.Hasegawa: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layr" Applied Surface Science. (in press). 123-124 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H,Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Suzuki and H.Hasegawa: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layr" Solid State Electronics. 41. 1641-1646 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] B.Adamowics, K.Ikeya H.Fujikura and H.Hasegawa: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Lay" Physica E. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa and H.Fujikura: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 28 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Araki, H.Fujikura and H.Hasegawa: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001) InP Substrates" Japanese Journal of Apllied Physics. 36. 1763-1769 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Fujikura, M.Kubo and H.Hasegawa: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayr-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics.36. 1937-1943 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Kasai and H.Hasegawa et al.: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Okada, H.Fujikura and H.Hasegawa: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown By Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Kudoh, H.Okada, T.Hashizume and H.Hasegawa: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layr by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Sceince. 117/118. 342-346 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Kihara, H.Fujikura and H.Hasegawa and O.Wada: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Sceince. 117/118. 385-389 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interface on Near Surface Quantum Structures Passivated by Silicon Interface Control Layr Technology" Applied Surface Science. 117/118. 710-713 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Ikeya, T.Hashizume and H.Hasegawa: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyr-Based Technique" Japanese Journal of Applied Physics. vol.36. 1756-1762 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Fujikura and H.Hasegawa: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. vol.36. 4092-4096 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Okada, S.Kasai, H.Fujikura, T.Hashizume and H.Hasegawa: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. vol.36. 4156-4160 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Ishikawa, T.Fukui and H.Hasegawa: "Kink defects and fermi level pinning on (2x4) reconstructed molecular beam epitaxially grown surfacs of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and X-ray photoelectron spectroscopy" Journal of Vacuum Science and Technology B. vol.15. 1163-1172 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] H.Hasegawa, T.Sato and T.Hashizume: "EvolutionMechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. vol.15. 1227-1235 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Dohmae, S.Suzuki, T.Hashizume and H.Hasegawa: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layr" Japanese Journal of Applied Physics. vol.36. 1834-1840 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Ishikawa, T.Fukui and H.Hasegawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2x4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. vol.36. 1749-1755 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Sato, S.Uno, T.Hashizume and H.Hasegawa: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. vol.36. 1811-1817 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Hashizume, S.Shiobara and H.Hasegawa: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. vol.36. 1775-1780 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Hanada: "Direct Formation of In GaAs Coupled Wire-Dot Structures by Selective Molecular Beam Epitaxy on InP Patterned Substrates" Solid State Electronics. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Okada: "A Novel Wrap-Gate-Controlled Single Electron Transistor Formed on an InGaAs Ridge Quantum Wire Grown by Selective MBE" Solid State Electronics. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Hashizume: "In-Situ Contactless characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown(2x4)GaAs Surfaces" Japanese Journal of Applied Physics. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Fujikura: "Controlled Formation of Narrow and Uniform InP-Based In GaAs Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] B.Adamowicz: "Computer Analysis of Surface Recombination Process at Si and Compound Semiconductor Surfaces and Behavior of Surface Recombination Velocity" Japanese Journal of Applied Physics. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] N.Tsurumi: "In-Situ UHV-STM Study of Formation Process of Ultrathin MBE Si Layer on GaAs (001)-(2x4) Surface" Japanese Journal of Applied Physics. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Satoh: "Computer Simulation and Experimental Characterization of Single Electron Transistors Based on Schottky Wrap Gate Control of 2DEG" Japanese Journal of Applied Physics. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Hasegawa: "Electrochemical Formation and Characterization of In-Plane and Wrap Gate Structures for Realization of GaAs-and InP-Based Quantum Wires and Dots" Applied Surface Science. 123/124(印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Hashizume: "Surface Passivation of GaAs with Ultrathin Si_3N_4/Si Inter-face Control Layer Formed by In-Situ ECR Plasma Nitridation" Applied Surface Science. 123/124(印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Takahashi: "Novel InP Metal-Insulator-Semiconductor Structure Having Ultrathin Silicon Interface Control Layer" Applied Surface Science. 123/124(印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Hasegawa: "Interface-Controlled Schottky Barriers on InP and Related Materials" Solid State Electronics. 41. 1441-1450 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Suzuki: "Fabrication and Electrical Characterization of InP-Based Insulated Gate Power HEMTs Using Ultrathin Si Interface Control Layer" Solid State Electronics. 41. 1641-1646 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] B.Adamowicz: "Photoluminescence Characterization of Air Exposed AlGaAs Surface and Passivated Ex-Situ by Ultrathin Silicon Interface Control Laye" Physica E. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Hasegawa: "Formation of InP-Based Quantum Structures by Selective MBE on Patterned Substrates Having High-Index Facets" Microelectronics Journal. 28. 887-901 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Araki: "Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001) InP Substrates" Japanese Journal of Applied Physics. 36. 1763-1769 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Fujikura: "Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation" Japanese Journal of Applied Physics. 36. 1937-1943 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Kasai: "Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Japanese Journal of Applied Physics. 36. 1678-1685 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Okada: "Observation of Coulomb Blockade Oscillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy in InP substrates" Japanese Journal of Applied Physics. 36. 1672-1677 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Kudoh: "Controlled Formation of Metal-Semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Gated Electron Waveguide Devices" Applied Surface Science. 117/118. 342-346 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Kihara: "Effect of Mis-Orientation of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy" Applied Surface Science. 117/118. 385-389 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Hasegawa: "Excitation Power Dependent Photoluminescence Characterization of Insulator-Semiconductor Interfaces on Near Surface Quantum Structures Passivated by Silicon Interface Control Layer Technology" Applied Surface Science. 117/118. 710-713 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Ikeya: "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control LAyer-Based Technique" Japanese Journal of Applied Physics. 36. 1756-1762 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Fujikura: "Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy" Japanese Journal of Applied Physics. 36. 4092-4096 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires" Japanese Journal of Applied Physics. 36. 4156-4160 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Ishikawa: "Kink defects and fermi level pinning on (2x4) reconstructed molecular beam epitaxially grown surfaces of GaAs and InP studied by ultrahigh-vacuum scanning tunneling microscopy and X-ray photoelectron spectroscopy" Jonrnal of vacuum Science and Technology B. 15. 1163-1172 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] H.Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process" Journal of Vacuum Science and Technology B. 15. 1227-1235 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer" Japanese Journal of Applied Physics. 36. 1834-1840 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2x4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Japanese Journal of Applied Physics. 36. 1749-1755 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process" Japanese Journal of Applied Physics. 36. 1811-1817 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Hashizume: "Dominant Electron Trap with Metastable state in Molecular Beam Epitaxial GaAs Grown at Low Temperatures" Japanese Journal of Applied Physics. 36. 1775-1780 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si (111) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods" Japanese Journal of Applied Physics. 36. 1453-1459 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T. Saitou: "″Determination of Built-in Electric Field Strength in InP/n^+- InP Structures Using Photoellipsometry″" Japanese Journal of Applioed Physics. 35. 1696-1700 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] B. W. Yang: "″Properties of InAs_xP_<1-x> Layer Formed by P-As Exchange Reaction on (001) InP Surface Exposed to As_4 Beam″" Journal of Electronic Materials. 25. 379-384 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Fujikura: "″Fabrication of InP-Based InGaAs Ridge Quantum Wires Utilizimg Selective Moleculat Beam Epitaxial Growth on (311) A Facets″" Jounal of Electronic Materials. 25. 619-625 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Suzuki: "″A Novel Insulated Gate Technology for InGaAs High Electron Mobility Transistors Using Silicon Interlayer Based Passivation Technique″" Jounal of Electronic Materials. 25. 649-656 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] B. X. Yang: "″Scanning Tunneling Microscope study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1267-1272 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Fujikura: "″Photoluminescence and Cathodoluminescence Investigation of Optical Properties of InP-Based InGaAs Ridge Quantum Wires Formed by Selective Molective Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1333-1339 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Kasai: "″Fabrication and Characterization of Novel Lateral Surface Superlattice Structure Utilizing Schottky Barrier Height Control by Doped Silicon Interface Control Layers″" Japanese Journal of Applied Physics,. 35. 1340-1347 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Kasai: "″Electron Beam Induced Current Characterization of Novel GaAs Quantum Nanostructures Based on Potential Modulation of Two-Dimensional Electron Gas by Schottky In-Plane Gates″" Japanese Journal of Applied Physics. 35. 6652-6658 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Uno: "″0.86eV Platinum Schottky Barrier on Indium Phosphide by In Situ Electrochemical Process and Its Application to MESFETs″" Japanese Journal of Applied Physics. 35. 1258-1263 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Koyanagi: "″Contactless and Nondestructive Characterization of Silicon Surfaces by Capacitance-Voltage and Photoluminescence Methods″" Japanese Journal of Applied Physics. 35. 946-953 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K. Jinushi: "″Novel GaAs-Based Single Electron Transistors with Schottky In-Plane Gates Operating up to 20K″" Japanese Journal of Applied Physics. 35. 1132-1139 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Fujikura: "″Surface Passivation of In_<0.53>Ga_<0.47>As Ridge Quantum Wires Using Silicon Interfase Control Layers″" Journal of Vacuum Science and Technology. B-14. 2888-2894 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Hashizume: "″Contactless Capacitance-Voltage and Photoluminescence Characterization of Ultrathin Oxide-Silicon Interfaces Formed on Hydrogen Terminated (III) Surfaces″" J. Vac. Sic. Technol.B-14. 2872-2881 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Hashizume: "″Quantum Transport in A Schottky In-Plane-Gate Controlled' GaAs/AlGaAs Quantum Well Wires″" Phisica B. 227. 42-45 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Tomozawa: "″Design and Fabrication of GaAs/AlGaAs Single Electron Transistors Based on In-Plane Schottky Gate Control of 2DEG″" Phisica B. 227. 112-115 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Shiobara: "″Deep Level and Conduction Mechanism in Low-Temperature GaAs Grown by Molecular Beam Epitaxy″" Japanese Journal of Applied Physics. 35. 1159-1164 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 長谷川英機: "化合物半導体量子細線および量子ドットの製作" 光学. 25(8). 448-455 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 長谷川英機: "化合物半導体量子構造表面のSi超薄膜界面制御層によるバッシベーション" 表面化学. 17(9). 567-574 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 長谷川英機: "「InP系化合物半導体材料およびデバイスの新展開」" 「応用物理」. 65(2). 108-118 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M. Araki: "Formation of InGaAs/InAlAs Quantum Wires and Dots with Extremely Smooth Facets on Mesa-Patterned (001) InP Substrates by Selective Molecular Beam Enitaxy″" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Fujikura: "″Excitation Power Dependent photoluminescence Behavior in Etched Quantum Wires Having Silicon Interlayer-Based Edge Passivation and Its Interpretation″," Jpn. J. Appl. Phys. 36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Kasai: "″Fabrication and Characterization of GaAs Single Electron Devices Having Single and Multiple Dots Based on Schottky In-Plane-Gate and Wrap-Gate Control of Two-Dimensional Electron Gas" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Okada: "Observation of Coulomb Blockade Type Conductance Oscvillations up to 50K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Sato: "Large Schottky Barrier Heights on Indium Phosphide-Based Materials Realized by In-Situ Electrochemical Process." Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] K. Ikeya: "Successful Surface passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y. Dohmae: "Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitor Having Silicon Interface Control Layer," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Yoshida: "Characterization of Interface Electronic Properties of Low-Temperature Ultrathin Oxides and Oxynitrides Formed on Si (III) Surfaces by Contactless Capacitance-Voltage and Photoluminescence Methods," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Hasegawa: "Evolution Mechanism of Nearly-Pinning Platinum/N-Type Indium Phosphide Interface with a High Schottky Barrier Height by In-Situ Electrochemical Process," J. Vac. Sci. Technol.B15(4)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Okada: "Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurementa in GaAs and InGaAs Quantum Wires," Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Kuboh: "Controlled Formation of Metal-semiconductor Interface to 2DEG Layer by In-Situ Electrochemical Process and Its Application to In-Plane Electron Waveguide Devices" Appl. Sun. Sci.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] K. Iizuka: "Small-Signal Response of Interface States at Passivated InGaAs Surfaces from Low Frefuenies up to Microwave Frequencies," Soild-State Electron.印刷中. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y. Ishikawa: "Missing-dimer structures and their kink defects on molecular beam epitaxially grown (2×4) reconstructed (001) InP and GaAs surfaces studied by ultrahigh-vacuum scanning tunneling microscopy" Jpn. J. Appl. Phys.36(3)(印刷中). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] H. Hasegawa: "Interface-controled Schottky barriers on InP and related materials" Soild-State Electronics. 印刷中. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Suzuki: "Fabrication and electrical characterization of InP-based insulated gate power HEMTs using ultrathin Si intefcae control layer" Soild-State Electronics. 印刷中. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] M. Kihara: "″Effet of Mis-Orientaition of Mesa-Stripes on the Growth of InGaAs Quantum Wires by Selective Molecular Beam Epitaxy″," Appl. Sur. Sci.印刷中. (1997)

    • Related Report
      1996 Annual Research Report

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Published: 1997-04-01   Modified: 2016-04-21  

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