• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Research on the highly reliable Cu multilevel interconnects employing the sustained self-sputtering

Research Project

Project/Area Number 08555076
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

SHINGUBARA Shoso  Hiroshima University, Dept. E&E, Associate Professor, 工学部, 助教授 (10231367)

Co-Investigator(Kenkyū-buntansha) KIKKAWA Takamaro  Hiroshima University, NanoDevice & Systems Lab., Professor, ナノデバイス・システム研究センター, 教授 (60304458)
SAKAUE Hiroyuki  Hiroshima University, Dept. E&E, Research Associate, 工学部, 助手 (50221263)
TAKAHAGI Takayuki  Hiroshima University, Dept. E&E, Professor, 工学部, 教授 (40271069)
Project Period (FY) 1996 – 1998
Project Status Completed (Fiscal Year 1998)
Budget Amount *help
¥6,700,000 (Direct Cost: ¥6,700,000)
Fiscal Year 1998: ¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1997: ¥4,600,000 (Direct Cost: ¥4,600,000)
KeywordsCopper / electromigration / sputtering / self-sputtering / electron temperature / plasma / エレクトロマイブレーション / バリアメタル
Research Abstract

We have investigated a highly reliable multilevel Cu interconnections against electromigration by the use of the sustained self sputtering of Cu. The first part of this study is the improvement and mechanism studies of self-sputtering. For this purpose, we have compared sputtering characteristics of deferent magnetron designs, and carried out electron energy distribution analysis using Langmuir probe. Finally we have found that the self-sputtering is delicately dependent on the magnetic field distribution, and pointed out that the target life will be drastically prolonged by controlling the distance between target and magnetron. The second part is the filling of Cu films into a high aspect ratio via and contact holes for the application of the ULSIs. The very good Cu filling is obtained compared with conventional collimation or long-throw sputtering due to a long mean free path of Cu atoms, and holes of aspect ratio 3 were completely filled by Cu.

Report

(4 results)
  • 1998 Annual Research Report   Final Research Report Summary
  • 1997 Annual Research Report
  • 1996 Annual Research Report
  • Research Products

    (31 results)

All Other

All Publications (31 results)

  • [Publications] S.ABDESLAM: "Molecular Dynamics Simulation of a Void in an Aluminum Interconnection Contain Triple Points Grain Boundary"Advanced Metallization Conference,Mat.Res.Soc.Symp.Proc.. ULSI-XIV. 475-482 (1999)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Z.J.Radzimski: "Directional Copper Deposition Using DC Magnetron Sputtering"J.Vac.Sci.& Tec nol.. B16. 1102-1106 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Kikkawa: "ULSI Scaling and Interconnect Technology"Advanced Metallization Conference in 1998,MRS Conf-Proc.. ULSI-XIV. 705-715 (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Shingubara: "Void Elorgation Phenomena Observed in Polycrystoxline Cu Interconnects at a High Current Density Stressing Condition"Mat.Res.Soc.Symp.Proc.. 473. 229-234 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T.Ichiki: "Gay-filling of Cu Employing Sustained Self-sputtering with Inductirely Coupled Plasma Ionization"Jpn.J.Appl.Phys.. 36. 1469-1472 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Shingubara: "Effect of Interfacial Reaction and Wetting Properties on Al Reflow Characteristics"Mat.Res.Soc.Conf.Proc.. ULSI-XII. 117-121 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Z.J.Radzimski: "Optical Emission Spectroscopy of High Density Metal Plasma Formed during Magnetron Sputtering"J.Vac.Sci.Technol.B. 15. 202-208 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Shingubara: "Void Formation Mechanism at No Current Stressed Area"American Institute of Physics Proceedings. 418. 159-170 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A.Sano: "Self-sputtering of Cu film employing highly ionized Cu plasma"Mat.Res.Soc.Conf.Proc.. ULSI-XI. 709-715 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S.Shingubara: "Cudeposition characteristics into submicron contact holio employing self-sputtering with a high ionization rate"Mat.Res.Soc.Proc.. 427. 185-192 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S. ABDESLAM, and S. Shingubara: "Molecular Dynamics Simulation of a Void in an Aluminum Interconnection Contain Triple Points Grain Boundary"Advanced Metallization Conference, Mat..Res. Soc. Symp. Proc.. ULSI-XIV. 475-482 (1999)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Z.J.Radzimski W.P.Posadowski, S.M.Rossnagel and S. Shingubara: "Directional Copper Deposition Using DC Magnetron Self-Sputtering"J. Vac. Sci. & Tecnol.. Vol.B16. 1102-1106 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T. Kikkawa: "ULSI Scaling and Interconnect Technology"Advanced Metallization Conference in 1998, MRS Conf. Proc.. ULSI-XIV. 705-715 (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S. Shingubara, S. Kajiwara, T. Osaka, H. Sakaue, and H. Takahagi: "Void Elongation Phenomena Observed in Polycrystalline Cu Interconnects at a High Current Density Stressing Condition"Mat. Res. Soc. Symp. Proc. Vol.. 473. 229-234 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] T. Ichiki, T. Kikuchi, A. Sano, S. Shingubara, and Y. Horiiike: "Gap-filling of Cu Employing Sustained Self-sputtering with Inductively Coupled Plasma Inization"Jpn. J. Appl. Phys.. vol.36. 1469-1472 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S. Shingubara, H. Kotani, K. Ando, H. Sakaue, F. Nishiyama, and T. Takahagi: "Effect of Interfacial Reaction and Wetting Properties on Al Reflow Characteristics"Mat. Res. Soc. Conf. Proc.. ULSI-XII. 117-121 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Z.J.Radzimski, O.E.Hankins, J.J.Cuomo, W.P.Posadowski, and S. Shingubara: "Optical Emission Spectroscopy of High Density Metal Plasma Formed during Magnetron Sputtering"J. Vac. Sci. Technol. B. Vol.15 No.2. 202-208 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S. Shingubara, T. Osaka, S. Abdeslam, H. Sakaue, and T. Takahagi: "Void Formation Mechanism at No Current Stressed Area"American Institute of Physics Proceedings. Vol.418. 159-170 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] A. Sano, H. Kotani, H. Sakaue, S. Shinguhara, T. Takahagi, Y. Horiike, and Z.J.Radzimski: "Self-sputtering of Cu film employing highly ionized Cu plasma"Advanced Metallization and Interconnect systems for ULSI Applications in 1995 Mat. Res. Soc. Conf. Proc.. ULSI-XI. 709-715 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] S. Shingubara, A. Sano, H. Sakaue, T. Takahagi, Y. Horiike, Z. Radzimski, and Posadowski: "Cu deposition Characteristics into submicron contact holes employing self-sputtering with a high ionization rate"Mat. Res. Soc. Proc.. vol.427. 185-192 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1998 Final Research Report Summary
  • [Publications] Z.J.Radzimski: "Direction copper deposition using dc magnetron self-sputtering" J.Vac.Sci.Technol. B16-3. 1102-1106 (1998)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.ABDESLAM: "Molecular Dynamics Simulation of a Void in an Aluminum Interconnection containing Triple Point of Grain Boundaries" Mat.Res.Sec.Symp-Proc.(発行予定). (1999)

    • Related Report
      1998 Annual Research Report
  • [Publications] S.Shingubara: "Void Elongation Phenomena Observed in Poly crystalline Cu Interconnect" Mat.Res.Soc.Synp.Proc.473. 229-234 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Ichiki: "Gap-filling of Cu Employing Sustained Self-sputtering" Jpn.J.Applied Phys.36. 1469-1472 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Z.J.Padzimski: "Optical Emission Spectroscopy of High Density Metal Plasma" J.Vac.Sci.Technol.B. 15-2. 202-208 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Shinguhara: "Void Formation Mechanism at No Current Stressed Area" American Institute of Physics Proceedings. 418. 159-17 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 新宮原 正三: "LSI配線信頼性技術における課題と今後の方向" 日本信頼性学会誌. 19-4. 257-262 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] ZJ. Radzimski, and S. Shingubara: "Optical Emission Spectroscopy of High Density Metal Plasma Formed during Magnetron Sputtering" J. Vac. Sci. Technol.,. (accepted for pubrication. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] T. Ichiki, T. Kikuchi, A. Sano, S. Shingubara, and Y. Horiike,: "Gap-Filling of Cu Employing Self-Sutained Sputtering with ICP Ionization" Extended Abstracts of Solid State Devices and Materials. 115-117 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S. Shingubara. H. Sakaue. T. Takahagi. Y. Horiike. Z. Radzimski, and Posadowski: "Cu deposition Characteristics into submicron contact holes employing self-sputterigng with a high ionization rate" Mat. Res. Soc. Proc.427. 185-192 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A. Sano, H. Sakaue, S. Shingubara. T. Takahagi. Y and ZJ. Radzimski: "Self-sputtering of Cu film employing highly ionized Cu plasma" Mat. Res. Soc. Conf. Proc.ULSI-XI. 709-715 (1996)

    • Related Report
      1996 Annual Research Report

URL: 

Published: 1997-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi