| Project/Area Number |
08555083
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
KOSHIDA Nobuyoshi Tokyo Univ.of A&T,Prof., 工学部, 教授 (50143631)
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| Co-Investigator(Kenkyū-buntansha) |
KOYAMA Hidaki Tokyo Univ.of A&T,Res.Assoc., 工学部, 助手 (40234918)
SERIKAWA Tadashi NTT,Senior Researcher, 主幹研究員
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥17,700,000 (Direct Cost: ¥17,700,000)
Fiscal Year 1997: ¥3,300,000 (Direct Cost: ¥3,300,000)
Fiscal Year 1996: ¥14,400,000 (Direct Cost: ¥14,400,000)
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| Keywords | poly-Si film / anodization / quantum confinement / electroluminescence / light-emitting diode / flat-panel display / thin film transistor |
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| Research Abstract |
To develop large-area light-emissive flat panel display devices, light-emitting porous silicon diodes have been fabricated using studied for poly-crystalline silicon (poly-Si) films. The characteristics of poly-Si devices as light-emitting diodes (LED) are clarified. The major results and their significances are summarized as follows.
1. Process technology of poly-Si-based LEDs
Appropriate dervice confifuration of poly-Si diodes as LEDs was determined by detailed investigations of the anodization conditions of poly-Si films, sstructuring of the active layr, formation of injection electrodes. On a basis of these studies, poly-Si LEDs with an efficiency comparable to that of conventional porous silicon diodes foramed on single-crystlline substrates were successfully obtained.
2. Charaacteristics of poly-Si-based LEDs
Form some electrical and optical measurements, it has been shown that the electroluminescence (EL) in porous poly-Si diodes is based on the same injection mechanism as in the case of single-crystalline substrates. Advantageous features of porous poly-Si diodes over the conventional porous silicon ones were made clear regarding the stability and uniformity of the EL emission.
3. Fundamental aspects toward large-area display devices
The compatibilty of poorous poly-Si LEDs with a poly-Si thin film transistor was examined using a planar-type poly-Si TFT fabricated on the glass substrate based on a laser annealing technique. As the gate voltage is increased under a constant drain voltage, the driving current was supplied into the LRDs, and then significant EL emission was observed through the top contact. This result indicates the posiibility of porous poy-Si as an active component for integrated LED arrays on glass substrates with a large-area.
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