| Project/Area Number |
08555084
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | RESEARCH INSTITUTE OF ELECTRONICS,SHIZUOKA UNIVERSITY |
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Principal Investigator |
HATANAKA Yoshinori SHIZUOKA UNIVETRSITY,RESEARCH INSTITUTE OF ELECTRONICS PROFESSOR, 電子工学研究所, 教授 (60006278)
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| Co-Investigator(Kenkyū-buntansha) |
TOMITA Yasuhiro HAMAMATSU PHOTONICS CO.FACTORY OF VACUUM TUBE RESEARCHER, 電子管事業部, 研究員
KAWAI Toshiaki HAMAMATSU PHOTONICS CO.FACTORY OF VACUUM TUBE HEAD OF DIV.RESEARCHER, 電子管事業部, 部門長研究員
AOKI Toru SHIZUOKA UNIV., GRADUATE SCHOOL OF ELECTRONIC SCIENCE AND TECHNOLOGY RESEARCH AS, 大学院・電子科学研究科, 助手 (10283350)
NAKANISHI Yoichiro SHIZUOKA UNIVERSITY,RESEARCH INSTITUTE OF ELECTRONICS ASSOCIATE PROFESSOR, 電子工学研究所, 助教授 (00022137)
冨田 康弘 浜松ホトニクス(株), 電子管事業部, 研究員
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥10,100,000 (Direct Cost: ¥10,100,000)
Fiscal Year 1997: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 1996: ¥6,400,000 (Direct Cost: ¥6,400,000)
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| Keywords | II-VI compound semiconductor / Rimote plasma / RPE-CVD / X-ray detector / CdTe / hydrogen radical / p-i-n structure / excimer laser doping |
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| Research Abstract |
ZnSe, ZnTe, CdSeE and CdTe thin films have deen epitaxially qrowm on gallium arsenide GaAs (100) substrates by the remote polasma enhanced chemical vapor deposition (RPE-CVD). Diethyl zinc, dimethyl cadmium and diethyl tellurium were used as source materials and hydrogen radicals generated by rf induction coupled plasma were introduced into the reaction chamber. Heteroepitaxial growth on GaAs substrate were fairly well obtained in single crystal phase.
n-type and p-type CdTe were studied on the layrs (thickness around 300 nm) grown epitaxially on semiinsulating GaAs substrate by radical assisted MOCVD technique working at a low pressure of 0.2 Torr. Gas phase iodine doping to obtaine n-type conductivity was carried by utilizing n-butyliodine as a dopant precursor. p-type doping was achieved by evaporating a thin layr (-30nm) of alkaline metal compounds such as NaTe on the surface of the undoped CdTe epitaxial layrs were thus obtained. Using this technique, p-and n-type CdTe layrs were grown on the intrinsic CdTe substrate (resistivity larger than 108 ohm cm) so as to form the p-i-n structure. Performance of detector, mainly dark current-voltage characteristics and x-ray photocurrent at different photon energies, have been studied.
on the research way, we have invented the technique of excimer laser doping for II-VI compound semiconductor. This techniques are very promissing for actual device fabrication.
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