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Superconductor/Insulator transition in two dimensional amorphous W ultra-thin film

Research Project

Project/Area Number 08640442
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 固体物性Ⅱ(磁性・金属・低温)
Research InstitutionCHIBA UNIVERSITY

Principal Investigator

KUWASAWA Yoshinori  Faculty of Science ; CHIBA UNIVERSITY Associate Professor, 理学部, 助教授 (60009602)

Co-Investigator(Kenkyū-buntansha) NOJIMA Tsutomu  Faculty of Science ; CHIBA UNIVERSITY Assistant researcher, 理学部, 助手 (80222199)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1997: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1996: ¥1,700,000 (Direct Cost: ¥1,700,000)
KeywordsSuperconductivity / Superconductor-Insulator transition / Amorphous / Quantum sheet resistance / Phase fluctuation / Superconducting order parameter / Kostelize-Thoughless transition / Thin film / 絶縁体 / SI転移 / 面抵抗 / 超伝導オーダーパラメーター / 位相ゆらぎ
Research Abstract

Amorphous W thin film (a-W) keeps a superconductivity down to the thickness of 1.2nm. Then this material is useful on the research of superconductivity of two dimensional disorder systems. In this research, two kinds of samples, Si/a-W/Si and a-W/Si multilayrs, were prepared and their superconducting characteristics were investigated. The following results were produced.
1.Observation of disorder induced Superconductor-Insulator (S/I) transition in Si/a-W/Si stucture
We measured the critical temperatures for various a-W film thickness with d_W=1-10nm. In d_W*1nm, superconductivity disappears and T-dependence of sheet resistance R_<sq> follows to the exp (T^<-1/3>) 's law. In the dependence of critical temperature T_<co> upon normal R_<sq> for d_W*1.2nm, the superconductivity disappears when R_<sq> equals to the quantum sheet resistance h/4e^2. This system indicates a typical disorder induced S/I transition.
2.Kostelize-Thoughless (KT) transition in a-W/Si multilayrs
KT-transition is the second phase transition where the vortex-antivortex pairs are induced near Tc by the thermal fluctuation of phase in order parameter. Due to the detail measurements of I-V characteristics at zero field, (1) the relation of KT transition and superconducting coupling between a-W layrs was investigated by the change of thickness of Si layr and (2) the vortex loop excitation at KT-transition was observed by controlling the number of bilayrs.
3.Observation of magnetic induced S-I transition in Si/a-W/Si structure.
In the samples with W-thickness of 1.2-3nm, the field induced S-I transition was observed by the temperature dependence of sheet resistance. Whether such a transition is vortex to Bose glass one caused by the fluctuation of superconducting phase or not was studied by analyzing the data with the Fisher's scaling law.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (16 results)

All Other

All Publications (16 results)

  • [Publications] Y.Kuwasawa etal: "Superconductor/Insulator transition of ultra thin amorphous W-film in Si/a-W/Si structure" Localization'96',Institute of Physics PollishAcademy. (Proceeding). 189-190 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsuo etal.: "Effect of the interlayer coupling on nonlinear I-V characteristics in amorphous W/Si multilayers" Czechoslovak Journal of Physics. 46. 747-748 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsuo etal.: "Current-voltage characteristics and layer coupling in amorphous W/Si multilayers" Physica C. 277. (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsuo etal.: "Finite-size effect on vortex loop excitation in amorphous-W/Si multilayers" Physica C. (印刷中). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Kuwasawa et al.: "Superconductor/Insulator transition of ultra thin amorphous W-film in Si/a-W/Si sandwich structure" "Localization 96" edited by Institute of Physics Polish Academy. (Proceeding). 189-190 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsuo et al.: "Effect of the interlayr coupling on nonlinear I-V characteristics on amorphous W/Si multilayrs" Czechoslovak Journal of Physics. Vol.46. 747-748 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsuo et al.: "Current/voltage characteristics and layr coupling in amorphous W/Si multilayrs" Physica C. Vol.277. 138-144 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Matsuo et al.: "Finite-size effect on vortex loop excitation in amorphous W/Si multilayrs" Physica C. (in print). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Kuwasawa etal.: "Superconductor/Insulator transition of ultra thin amorphous W-film in Si/a-W/Si structure" Localization ‘96', institute of Physics Pollish Academy. (proceeding). 189-190 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Matsuo etal.: "Effect of the interlayer coupling on nonlinear I-V characteristics in amorphous W/Si multilayers" Czechoslovak Journal of Physics. 46. 747-748 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Matsuo etal.: "Current-voltage characteristics and layer couping in amorphous W/Si multilayers" Physica C. 277. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Matsuo etal.: "Finite-size effect on vortex loop excitation in amorphous-W/Si multilayers" Physica C. (印刷中). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Kuwasawa et al.: "Superconductor-insulator transition of ultra thin amorphous W film in Si/a-W/Si sandwich structure" Localization'96',Inst. of Phys. Polish Academy. Proceeding. 189-190 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Matsuo et.al.: "Effect of interiayer coupling on nonlinear I-V characteristics in amorphous W/Si multilayer" Gzechoslovak Journal of Physics. 46巻. 747-745 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Matsuo et.al.: "Current-voltage characteristics and layer coupling in amorphous W/Si Multilayers" Physica C. (in press). (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] 桑沢好則 他: "アモルファスW超薄膜における超伝導-絶縁体転移" 日本物理学会秋の分科会予稿集. 第3分冊. 503-503 (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2020-05-15  

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