| Project/Area Number |
08640560
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Space and upper atmospheric physics
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| Research Institution | Kyoto Institute of Technology |
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Principal Investigator |
SAITO Yoshio Kyoto Inst, .T ech Engin.Design Res.Associate, 工芸学部, 助手 (20093354)
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| Co-Investigator(Kenkyū-buntansha) |
KAITO Chihiro Ritsumeikan Univ.Physics Prof., 理工学部, 教授 (80027812)
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| Project Period (FY) |
1996 – 1998
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| Project Status |
Completed (Fiscal Year 1998)
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| Budget Amount *help |
¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 1998: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1997: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 1996: ¥1,600,000 (Direct Cost: ¥1,600,000)
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| Keywords | nonvolatile material / Infrared spectrum / planetary science / CeO_2 / WC / ZC / SiC / SiO / Fe-SiO / フラーレン / 生成機構 / 酸素リッチスター / 星間物質 / 材料創製法 / 光吸収 / 形態 / 金属酸化膜 / 酸化マグネシウム / カーボンスター / 超微粒子 |
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| Research Abstract |
9.1. Construction of Material creating method
It should be noted that only to develop a new system to obtain high temperature is not important but discovery of new idea is to create of nonvolatile materials in a meteorite. Nonvolatile materials are evaporate by the aid of carbon heated by electric current. A carbobn thin film, is produced containing nonvolatile materials on a substrate. A oxide film remain of the materials on the substrate by heating in air. If the heat treatment is made in vacuum, a carbite film is also produced. We have obtained films of CeO2, WO and ZO.
9.2. Growth of SiC by Reaction between Thin Films and Ultrafine Particles In the case of a reaction between carbon particles and SiO films, silicon carbide was produced above 90000 by the diffusion of Si atoms from SiO films into carbon particles, In the case of that between Si particles and carbon films, silicon carbide was produced above room temperature by the diffusion of carbon atoms into Si particles, In the above two cases, the direction of atom diffusion during the reaction was different.
9.3. Correlation between the structure and Infrared spectra of SiO and SiO containing Fe or Mg atoms. Amorphous silicon oxide films have been studied by electron microscopy and infrared spectroscopy. The films consist of micro crystalites of SiO2 and Si. By the heat eatment, the micro crystallits transformed to the different phases. In SiO films containing of Fe or Mg, the transformation did not occur. Infrared spectra change with the structure changing. Astrophysical implication have been discussed.
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