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Control of band offsets qt high-index semi conductor interfaces by the Piezo-effect induced with thin strained insertion layrs

Research Project

Project/Area Number 08650029
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 表面界面物性
Research InstitutionUniversity of Tokyo

Principal Investigator

SAITO Toshio  Univ.of Tokyo, CCR,Reserch Associate, 国際・産学共同研究センター, 助手 (90170513)

Co-Investigator(Kenkyū-buntansha) HIRAKAWA Kazuo  Univ, of Tokyo, IIS,Ass.Professor, 生産技術研究所, 助教授 (10183097)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1997: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1996: ¥1,400,000 (Direct Cost: ¥1,400,000)
KeywordsGallium Arsenide / Indium Arsenide / Aluminium Arsenide / Ultra Thin Film / Piezo-Effect / Semiconductor Interface / Band Offset / Tight-Binding Method / カリウム砒素
Research Abstract

We have theoretically studied the electronic structure of an InAs monolayr on a (311) GaAs substrate by using the semi-empirical sp^3s^<**> tight-binding method. (InAs)_1/(GaAs)_n[311] superlattices with n=10-26 are used for calculations. The (311)-InAs monolayr induces an electron level (near the conduction-band edge) and a hole level (near the valence-band edge) in the GaAs band-gap. The electron-hole energy separation is smaller than the GaAs band-gap energy by 0.06eV (n=10) and 0.03eV (n=26), which accounts for the observed photoluminescence peak [M.I.Alonso et al. : Phys. Rev. B50,1628 (1994)]. The charge densities of the electorn state and the hole state are weakly lacalized near the (311)-InAs monolayr. Next, we have studied the strain energy distribution and electronic structure of InAs pyramidal quantum dots (QDs) with uncovered surfaces. Using the sp^3s^<**> tight-binding method, we calculate the densities of states for the inside states and the surface states. The density of the inside states shows a large energy gap ; 2.71-1.74eV for 161-1222-atom QDs. At the same time, we find the surface states in the gap.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (23 results)

All Other

All Publications (23 results)

  • [Publications] T.Saito: "Electronic structure of (311)-InAs mono layers embedded in GaAs" Superlattices and Microstructures. (発表予定). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: "Effects of znse and P insertion layers on band offsets at (100)GaAs/AlAs interfaces" Applied Surface Science. Vol.107. 222-226 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: "Band Discontinuities at the (100)GaAs/AlAs Interfaces with Inand P-Insertion Layers:Effects of Isoelectronic Impurity Layers" Solid State Communications. Vol.101. 1-5 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: "Control of band discontinuities at(100)GaAs/AlAs interfaces by Znse insertion layers:comparison with Si insertion layers" Physical Review B. Vol.56. 14933-14936 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: "Strain distribution and electronic structure of InAs quantum dots on GaAs:Atomic scale calculations" Physics of Low-Dimensional Structures. Vol.11/12. 19-26 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: "Strain energy distribution and electronic structure of InAs pyramidal quantum dots with uncovered surfaces" Physical Review B. (発表予定). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito and T.Ikoma: ""Effects of ZnSe and P Insertion Layrs on Band Offsets at (100) GaAs/AlAs Interfaces"" Applied Surface Science. 107. 222 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: ""Possibility of Band-Discontinuity Control at (100) GaAs/AlAs Interfaces by ZnSe Insertion Layrs"" Transactions of the Materials Research Society of Japan. Vol.20. 739 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito, Y.Hashimoto, and T.Ikoma: ""Band Discontinuities at the (100) GaAs/AlAs Interfaces with In-and P-Insertion Layrs : Effects of Isoelectronic Impurity Layrs"" Solid State Communications. 101. 1 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: ""Control of band discontinuities at (100) GaAs/AlAs interfaces by ZnSe insertion layrs : Comparison with Si insertion layrs"" Physical Review B. 56. 14933 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito, J.N.Schulman, and Y.Arakawa: ""Strain distribution and electronic structure of InAs quantum dots on GaAs : Atomic scale calculations"" Physicks of Low-Dimensional Structires. 11/12. 19 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: ""Electronic structure of (311)-InAs monolayrs embedded in GaAs"" Superlattices and Microstructures.(in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito, J.N.Schulman, and Y.Arakawa: ""Atomic Scale Calculations for Strain Distribution and Electronic Structure of InAs Pyramidal Quantum Dots on (100) GaAs"" Proc. of 24th Int. Symp. on Compound Semiconductors, San Diego, USA.(1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito, J.N.Schulman, and Y.Arakawa: ""Strain energy distribution and electronic structure of InAs pyramidal quantum dots with uncovered surfaces : Tight-binding analysis"" Physical Review B. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] T.Saito: "Control of band discontinuities at(100)GaAs/AIAs interfaces by Znse insertion layers:Comparison with Si insertion layers" Physical Review B. Vol.56. 14933-14936 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Saito: "Strain distribution and electronic,structure of InAs quantum dots on GaAs:Atomic scale calculations" Physics of Low-Dimensional Structures. Vol.11/12. 19-26 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Saito: "Atomic scale calculations for strain distribution and electronic structure of InAs pyramidal quantum dots on(100) GaAs" Proc.of 24th Int,Symp,on Compound semiconductors. (発表予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Saito: "Strain energy distribution and electronic structure of InAs pyramidal guantum dots with uncovered surfaces" Physical Review B. (発表予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] T.Saito: "Electronic structure of (311)-InAs monolayers embedded in GaAs" Superlattices and Microstructures. (発表予定).

    • Related Report
      1996 Annual Research Report
  • [Publications] 斉藤敏夫: "GaAs(311)上のInAs超薄膜の電子構造" 電子情報通信学会技術研究報告. ED96. 47-52 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Saito: "Possibility of Band-Discontinuity control at(100)GaAs/AlAs Interfaces by ZnSe Insertion Layers" Transactions of the Materials Research Society Japan. Vol.20. 739-742 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Saito: "Effects of ZnSe and P insertion layers on band offsets at(100)GaAs/AlAs interfaces" Applied Surface Science. Vol.107. 222-226 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Saito: "Band Discontinuities at the (100)GaAs/AlAs Interfaces with In-and P-Insertion Layers:Effects of I soelectronic Impurity Layers" Solid State Communications. Vol.101 No.1. 1-5 (1997)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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