| Project/Area Number |
08650034
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | HIROSHIMA UNIVERSITY |
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Principal Investigator |
SAKAUE Hiroyuki Hiroshima Univ., Faculty of Eng., Research associate, 工学部, 助手 (50221263)
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| Co-Investigator(Kenkyū-buntansha) |
SHINGUBARA Shoso Hiroshima Univ., Faculty of Eng., Associate professor, 工学部, 助教授 (10231367)
TAKAHAGI Takayuki Hiroshima Univ., Faculty of Eng., Professor, 工学部, 教授 (40271069)
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 1997: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1996: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Keywords | H-terminated Si surface / step / terrace structure / flattening treatment / dissolved oxygen concentration / Al nano-structure / DMAIH / selective reaction / アルミニウム選択堆積 / 平坦化表面 / 昇温脱離法 / テラス周期構造 |
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| Research Abstract |
We tried to form a regular structure such as a periodic step/terrace on a Si(111) wafer surface using wet process. And we also investigated to form the ordered Al nano-structure in wide area of a silicon wafer surface using the selective reactivity on the H-terminated Si(111) surface with the periodic step/terrace structure. The results of research are shown as follow.
1. The formation of the periodic step/terrace structure with regular step edge was achieved by NH_4F aqueous solution at low DOC condition.
2. It was found that the Si(111) surface was self-organized to the step/terrace structure which period was fixed by value of the off-angle of wafer.
3. We successfully obtained the atomic image of the area nearby the step edge on the surface of hydrogen terminated Si(111) prepared by NH_4F treatment.
4. As a result of comparison of an Al deposition rate and a thermal desorption behavior of hydrogen on H-terminated Si surface, we revealed the surface reaction mechanism in the Al deposition process that DMA1H selectively react only with silicon di- and tri-hydride species on the hydrogen-terminated silicon surface.
5. The formation of the aluminum on NH_4F treated Si(111) surface, on which di-hydride structure was localized at step edge, preferentially occurred at the step edge, as the result of selective reaction of DMA1H with a hydrogen atom of di-hydride structure.
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