Evaluation of Semiconductor-Metal Atomic Interfaces with High Field Microscopies
| Project/Area Number |
08650039
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | Nagasaki Institute of Applied Science |
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Principal Investigator |
OKUNO Kimio Nagasaki Inst.of Appl.Science, Depa.of Electri.Eng., Professor, 工学部, 教授 (40103395)
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 1997: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1996: ¥1,300,000 (Direct Cost: ¥1,300,000)
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| Keywords | Silicon / Interface / Ultrathin film / Thin-film / Semiconductor film / Field ion microscope / Field emission / 薄膜成長 / シリサイド / シリサイド合金 / 薄膜 / 単原子層 / 電界放射顕微鏡 |
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| Research Abstract |
Silicon ultrathin film growth and silicon-metal interfacial properties were evaluated using field electron emission and field ion microscopies (FEM-FIM). After several monolayrs of Si were vapor-deposited onto the metal (W,Mo and Ta) needle specimen tip surfaces, field emission and field ion observations were made alternately to investigate the correlation between the silicon ultrathin film states and the work function. When Si was vapor-deposited onto the W and Mo tip surfaces at around 50 K,a Si monolayr with a pseudomprphic structure was formed on the W and Mo needle specimen surfaces, and all values of the work function increase 0.3-0.4 eV more than the value of the work function of the W and Mo surfaces. In this case, the disturbance and defects of the atomic arrangements of the substrate W and Mo surfaces and silicontungsten intermixing were not observed. In Si-W system, an alloying in the early stage was especially observed on W {001}, W {111} and W {112} planes in the thermal heating at 850-900 K.After the early stage silicdes were formed, a clean surface of the W substrate appeared after the field evaporation of the topmost third atomic layr of the W substrate, based on the field ion Ne image and the behavior of Fowler-Nordheim plots. Si-W intermixing processes were also investigated, and the silicide phase formed around and on W {111} plane was recognized to forme over the deeper atomic layrs than the another crystall panes of the W substrate in the thermal heating at around 950 K.To investigate the electronic states corresponding the atomic structure of the Si growth and the Si-metal interfaces, respectively, field emission energy spectroscopy (FEES) was constructed at the present work, and the further improvement of the FEES system to high resolution performance has been continued.
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Report
(3 results)
Research Products
(2 results)
