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Sub-Atomic-Layr Epitaxy of Si/Ge Semiconductors

Research Project

Project/Area Number 08650369
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

SUDA Yoshiyuki  Tokyo Univ.of Agri.and Tech., Faculty of Tech., Associate Professor, 工学部, 助教授 (10226582)

Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 1997: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 1996: ¥1,400,000 (Direct Cost: ¥1,400,000)
Keywordsatomic layr epitaxy / epitaxy / silicon / self-limiting / laser-induced excitation / migration / digital epitaxy / disilane / 表面泳動 / 反射型高速電子線回折
Research Abstract

Atomic Layr Epitaxy (ALE) is an epitaxial film growth technique with which a film is grown layr-by-layr using an one-monolayr saturation adsorption reaction ; a self -limiting function. Hydride molecules are attractive for their being free of impurity species. However, since their saturation coverages are less than one monolayr, it is generally difficcult to realize ALE using the hydride molecules. In 1993, Suda (head investigator) et al. proposed that a sub-atomic-layr epitaxy (SALE) method with which a film is epitaxially grown submonolayr by submonolayr repeating an exposure of hydride molecules and an adatom migration process induced by surface thermal excitation. The adatom migration process is a key process which has not been focused on for ALE and with it, submonolayr-by submonolayr epitaxy is relized. In this research, the relationship between the SALE prowth conditions and growth characteristics including growth modes, growth rates, and growth morphologies has been obtained us … More ing a Si_<>H_6-on-Si (001) system. On the basis of the results, a SALE growth model has been proposed Through these work, fundamental growth mechanisms and a growth control method for SALE has been obtained. The results suggest that SALE growth with a growth unit of saturation coverage if the saturation coverage of a hydride molecule is in the rangeof 0 to 2 monolayr. In this resesarch, a method for Si/Ge ALE has been also investigated. Through this work, thermally cracking method was first applied and it has been found that thermally cracked Si_<>H_6 species saturate at one monolayr on both Si (001) and Ge (001). In the case of Si ALE on GE (001), Si/Ge interface is abrupt. The results imply that thermally cracked GeH_4 is also promising for Ge ALE.With the SALE and thermal cracking ALE using hydride molecules proposed by the head investigator, atomically controlled epitaxy technologies for IV-group semiconductors are expected to be widely promoted and the methods will give a great contribution to the progress of Si/Ge quantum well devices. Less

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (17 results)

All Other

All Publications (17 results)

  • [Publications] M.Ishida, M.Yamashita, Y.Nagata, and Y.Suda: "Growth Temperature Window and Self-Limiting Process in Sub-Atomic-Layer Epitaxy" Jpn.J.Appl.Phys.35. 4011-4015 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda, M.Ishida, and M.Yamashita: "Ar^+-Laser Assisted Sub-Atomic-Layer Epitxy of Si" J.Crystal Growth. 169. 672-680 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda: "Mechanisms and Growth Characteritics of Si Sub-Atomic-Layer Epitaxy fromSi_2H_6" Ext.Abs.Int.Conf.Solid State Devices and Materials. 682-684 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda: "Migration-Assisted Si Sub-Atomic-Layer Epitaxy from Si_2H_6" J.Vac.Sci.Technol.A15. 2463-2468 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda, Y.Misato, D.Shiratori, K.Oryu, and Y.Yamashita: "Saturation Adsorption Reaction of Cracked Si_2H_6 on Si(001)and Ge(001)" Appl.Surf.Sci.(in press). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.Ishida, M.Yamashita, Y.Nagata, and T.Suda: "Growth temperature window and self-limiting process in Sub-Atomic-Layr Epitaxy" Jpn. J.Appl. Phys.35. 4011-4015 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda, M.Ishida and M.Yamashita: "Ar^+-Laser Assisted Sub-Atomic-Layr Epiyaxy of Si" J.Crystal. Growth. 169. 672-680 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda: "Mechanisms and Growth Characteristics of Si Sub-Atomic-layr Epitaxy from Si_2H2_6" Ext. Abs. Int. Conf. Solid State Devices and Materials (The Japan Society of Applied Physics, Tokyo 1996). 682-684

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda: "Migration-Assisted Si Sub-Atomic-Layr Epitaxy from Si_2H_6" J.Vac. Sci. Technol.A15. 2643-2468 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda, Y.Misato, D.Shiratori, K.Oryu, and M.yamashita: "Saturatioin Adsorption Reactiion of Cracked Si_2H_6 on Si (001) and Ge (001)" Appl. Surf. Sci.(in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda, Y.Misato, and D.Shiratori: "Si Atomic-Layr Epitaxy Using Thermally-Cracked Si_2H_6" J.Crystal Growth. (submitted).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.Suda: "Migration-Assisted Si Sub-Atomic-Layer Epitaxy from Si_2H_6" J.Vac.Sci.Technol.A15. 2463-2468 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Suda, Y.Misato, D.Shiratori, K.Oryu, and Y.Yamashita: "Saturation Adsorption Reaction of Cracked Si_2H_6 on Si(001)and Ge(001)" Appl.Surf.Sci.(in press). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Ishida,M.Yamashita,Y.Nagata and Y.Suda: "Growth temperature window and self-limiting process in sub-atomic-layer epitaxy" Jpn.J.Appl.Phys.35. 4011-4015 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Suda,M.Ishida and M.Yamashita: "Ar^+-laser assisted sub-atomic-layer epitaxy of Si" J.Crystal Growth. 169. 672-680 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Suda: "Mechanisms and growth characteristics of Si sub-atomic-layer epitaxy from Si_2 H_6" Ext.Abs.Int.Conf.Solid State Devices and Materials. 682-684 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Suda: "Migration-assisted Si sub-atomic-layer epitaxy from Si_2 H_6" J.Vac.Sci.Technol.A. (in press). (1997)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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