Growth of InAsSb alloy layrs by compositional conversition and its application to mid-infrared sensing devices
| Project/Area Number |
08650376
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Shizuoka University |
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Principal Investigator |
TANAKA Akira Shizuoka University, Research Institute of Electronics, Associate Professor, 電子工学研究所, 助教授 (50022265)
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| Co-Investigator(Kenkyū-buntansha) |
KIMURA Masakazu Shizuoka University, Research Institute of Electronics, Professor, 電子工学研究所, 助手 (50177929)
SUKEGAWA Tokuzo Shizuoka University, Research Institute of Electronics, Professor, 電子工学研究所, 教授 (30006225)
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| Project Period (FY) |
1996 – 1997
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| Project Status |
Completed (Fiscal Year 1997)
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| Budget Amount *help |
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 1997: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 1996: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Keywords | alloy semiconductor / solution growth / compositional conversion / infrared detector |
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| Research Abstract |
InAsSb alloy is a promising material for mid-infrared devices. However the lack of a substrate lattice-matched to the alloy system makes it difficult to fabricate the higt performance devices. To overcome this problem, "compositional conversion" was applied to the formation of InAsSb alloy layrs with desired composition on a compound crystalline substrate available at present. In this technique, melting point (Tf) of the materials plays an important role to grow the alloy layr.
At first, the growth of low Tf crystal (InSb) on a higt Tf substrate (InAs) was investigated and made it clear that layr-mode growth is obtained at relatively higt growth temperature. In the case of InSb growth on InAs substrates, the temperature range between 390C and 440C is preferable.
The samples prepared were contacted to ternary solution saturated with alloy components, named "conversion process". The experiments made clear the following points : the diffusion of a high Tf alloy components into the low Tf grown layr is very high ; therefore the low Tf grown layr converts immediately in its composition ; homogenization in composition and lattice repairing advances in the following period ; the final alloy composition reaches to an equilibrium composition with the solution used ; therefore the alloy layrs with desired composition can be realized by adjusting the composition of the solution ; the substrate with the highest Tf is stable during this conversion process. Successive growth of alloy on the converted alloy layrs showed that the crystalline quality of grown alloy is drastically improved.
Thus, the prospects for device application of InAsSb alloy was developed. Based on the knowledge obtained, the mid-infrared devices could be fabricated, making progress an information-communication system and/or an air pollution watching system demanded in near future.
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Report
(3 results)
Research Products
(9 results)
