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Study on the control of film properties by low energy ions in sputtering process

Research Project

Project/Area Number 08650383
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionTHE UNIVERSITY OF TOKUSHIMA

Principal Investigator

TOMINAGA Kikuo  The University of Tokushima, Faculty of Engineering, Associate Professor, 工学部, 助教授 (10035660)

Co-Investigator(Kenkyū-buntansha) HANABUSA Takao  The University of Tokushima, Faculty of Engineering, Professor, 工学部, 教授 (20035637)
NAKABAYASHI Ichiro  The University of Tokushima, Faculty of Engineering, Professor, 工学部, 教授 (70035624)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 1997: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 1996: ¥1,800,000 (Direct Cost: ¥1,800,000)
KeywordsSputtering / nitride film / oxide film / AlN / ZnO / ITO / transparent conductive film / 酸化亜鉛 / 窒化アルミニウム
Research Abstract

In this study, for the DC reactive sputtering process for nitrides and oxides, we investigated the influence of ions impinging the substrate on the film properties. Since sputtering system with two faced targets was expected to be effective in decreasing the film bombardment on the substrate by energetic ions, we applied this sytem in investigation of the influence of ion exposure of the substrate. In the film deposition of AlN,the influence of ion bombardment was not decreased even in the facing target sputtering system, and the film growth was degraded by the ion bombardment. The mechanism of acceleration of ions such as nitrogen and argon toward the substrate were cleared to be due to mainly by the potential difference between the plasma potential in discharge region and the floating potential on the substrate. The above influence of ion bombardment on the film was decreased by using alternating sputtering technique where one target was biased at positive potential while another tar … More get was sputtered. The results demonstrated that the ion bombardment can be diminished by this sputtering system, which confirms the ion bombardment is taking an important role in the film quality of AlN film. Setting a mesh in front of the substrate also changed the ion flux bombarding the substrate, which influenced on the residual stress in AlN film. Magnetic field distribution in the facing target sputtering system influenced the ion flux bombarding the substrate. These characteristics were related to the electron and ion flow in the chamber, as a result, the ion flux bombarding the substrate.
In the deposition of oxides, we adopted ZnO film and ITO film. We could not obtain the 150-200 mu OMEGAcm resistivity in ZnO (the lowest value reported until now) only by decreasing energetic particles bombarding depositing film. Other factors were more important to acoomplish the lowest value in resistivity. We showed that additional Zn atoms have a strong influence in decreasing the film resistivity. Appropriate addition of Zn atoms improved the film crystallinity, and increased also the carrier concentration and the Hall mobility. This was caused by an increase of nuclei at the first stage in polycrystal film growth. In ITO deposition, we examined the effects of decreasing the energetic oxygen in using facing targets. Certainly we could obtain the lowest film resistivity by this technique. Furthermore, using (00・2) AlN as a substrate we could increase the carrier concentration, but the decrease of Hall mobility was observed. This was due to the increase of donor scattering. As a result, a drastic improvement in resistivity was difficult in ITO film. The improvement of doping efficiency of Sn donors is necessary for much more decrease in ITO film resistivity. Less

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (57 results)

All Other

All Publications (57 results)

  • [Publications] K.Tominaga: "ZnO:In Film Prepared by Sputtering of Facing ZnO:In and Zn Targets" J.Vac.Sci.& Technol.(掲載予定). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga: "Film Properties of ZnO:Al Prepared by Co-sputtering of ZnO:Al and Either Zn and Al Target" J.Vac.Sci.& Technol.Vol.A15,No.3. 1074-1079 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga: "ZnO:Al Films prepared by the Facing Target Sputtering System" Proc.of an International Conference on Advanced Materials Development and Performance Evaluation and Application,. Auckland,New Zealand. 238-243 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Kumano: "Fablication of ZnO Varistor Thin Films by RF Sputtering Technique" Proc.of an International Conference on Advanced Materials Development and Performance Evaluation and Application,. Auckland,New Zealand. 221-225. (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga: "Transparent Conductive ZnO Film Preparation by Alternative Sputtering of ZnO:Al Target and Either Zn or Al Target" Thin Solid Films. (掲載予定). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga: "Effects of UV Light Irradiation and Excess Zn Addition on ZnO:Al Film Properties in Sputtering Process" Thin Solid Films. (掲載予定). (1998)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga: "Magnetic Field Dependence of AlN Properties in DC Facing Sputtering" Proc.4th Int.Symp.on Sputtering and Plasma Processes. Kanazawa,ISSP′97. 129-133 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] 日下 一也: "交代式スパッタリング法によるAlN膜の残留応力測定" 材料. Vol.46,No.12. 1429-1435 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Kusaka: "Effect of Partial Nitrogen Gas Pressure on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of the Fifth International Conference on Residual Stresses. Linkoping,Sweden. (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Kusaka: "Effect of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Proc.of an International Conference on Advanced Materials Development and Performance Evaluation and Application. Auckland,New Zealand. 310-319 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Kusaka: "Effect of External Magnetic Field on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of The Second International Conference on Nitride Semiconductors. Tokushima,Japan. 378 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo Tominaga: "ITO Films Prepared by Facing Target Sputtering System" Thin Solid Films. 281-282. 194-197 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo.Tominaga: "TiN Films Prepared by Unbalanced Planar Magnetron Sputtering Under Control of Photoemission of Ti" Thin Solid Films. 281-282. 182-185 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kazuya.Kusaka: "Effects of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Thin Solid Films. 281-282. 340-343 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo.Tominaga: "ITO Films Prepared on Oriented AlN Films by Facing Target Sputtereing System" Transactions of Material Research Society of Japan. Vol.20. 554-557 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo Tominaga: "Transparent ZnO:Al Film Prepared by Co-Sputtering of A ZnO:Al and Either Zn or Al" Thin Solid Films. 290-291. 84-87 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo Tominaga: "Gas Pressure Dependence of AlN Films Prepared in Alternative Magnetron Sputtering" Jpn.J.Appl.Phys. Vol.35. 4972-4975 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kazuya Kusaka: "Effect of Plasma Protection Net on Residual Stress in AlN Films Deposited by Magnetron Sputtering System" Thin Solid Films. 290-291. 260-263 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga, N.Umezu, I.Mori, T.Ushiro, T.Moriga and I.Nakabayashi: "Properties of ZnO : In Film Prepared by Sputtering of Facing ZnO : In and Zn Targets" J.Vac.Sci.& Technol.(to be pressed). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga, H.Manabe, N.Umezu, I.Mori, T.Ushiro and I.Nakabayashi: "Film Properties of ZnO : Al Prepared by Co-sputtering of ZnO : Al and Either Zn and Al Targets" J.Vac.Sci.& Technol.Vol.A15, No.3. 1074-1079 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga, N.Umezu, H.Manabe, I.Mori, T.Ushiro, T.Moriga, I.Nakabayashi: "ZnO : Al Films prepared by the Facing Target Sputtering System" Proc.of Int.Conf.on Advanced Materials Development and Performance Evaluation and Application, Auckland, New Zealand, July. 238-243 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Kumano, N.Umezu, T.Ushiro, T.Moriga, K.Tominaga, and I.Nakabayashi: "Fablication of ZnO Varistor Thin Films by RF Sputtering Technique" Proc.of Int.Conf.on Advanced Materials Development and Performance Evaluation and Application, Auckland, New Zealand, July. 221-225 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga, N.Umezu, I.Mori, T.Ushiro, T.Moriga, and I.Nakabayashi: "Transparent Concuctive ZnO Film Preparation by Alternative Sputtering of ZnO : Al Target and Either Zn or Al Target" Proc.4th IUMRS Int.Conf.in Asia OVTA,Makuhari, Chiba, Sept.640 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga, N.Umezu, I.Mori, T.Ushiro, T.Moriga, and I.Nakabayashi: "Effects of UV Light Irradiation and Excess Zn Addition on ZnO : Al Film Properties in Sputtering Process" Thin Solid Films. (to be published). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga, T.Ao, Y.Sato, I.Mori, K.Kusaka, and T.Hanabusa: "Magnetic Field Dependence of AlN Properties in DC Facing Sputtering" Proc.4th Int.Symp.on Sputtering and Plasma Processes (Kanazawa, ISSP'97) June. 129-133 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Kusaka, T.Hanabusa, K.Tominaga, and T.Ao: "Residual Stress Measurement in AlN Film Deposited by Alternating Sputtering Method" J.of the Society of Materials Science Japan. Vol.46, No.12. 1429-1435 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Kusaka, T.Hanabusa, K.Tominaga and T.Ao: "Effect of Partial Nitrogen Gas Pressure on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of the Fifth Int.Conff on Residual Stresses, Linkoping, Sweden, June. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Kusaka, T.Hanabusa and K.Tominaga: "Effect of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Proc.of Int.Conf.on Advanced Materials Development and Performance Evaluation and Application, Auckland, New Zealand, July. 310-319 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Kusaka, T.Hanabusa and K.Tominaga: "Effect of External Magnetic Field on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of The Second Int.Conf.on NitrideSemiconductors, Tokushima, Japan, October. 378 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo Tominaga, Tetsuya.Ueda, Masahiro.Kataoka and Ichiro.Mori: "ITO Films Prepared by Facing Target Sputtering System" Thin Solid Films. 281-282. 194-197 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo.Tominaga, Shozo.Inoue, R.P.Howson, Kazuya.Kusaka and Takao.Hanabusa: "TiN Films Prepared by Unbalanced Planar Magnetron Sputtering under Control of Photoemission of Ti" Thin Solid Films. 281-282. 182-185 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kazuya.Kusaka, Takao.Hanabusa and Kikuo.Tominaga: "Effects of Nitrogen Gas Pressure on Resudual Stress in AlN Films deposited by Planar Magnetron Sputtering System" Thin Solid Films. 281-282. 340-343 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo.Tominaga, Tetauya.Ueda, Takahiro.Ao and Ichiro.Mori: "ITO Films Prepared on Oriented AlN Films by Facing Target Sputtering System" Transactions of Material Research Society of Japan (Makuhari, May 24, Japan MRS). Vol.20. 554-557 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo Tominaga, Masahiro Kataoka, Haruhiko manage, Tetsuya Ueda and Ichiro Mori: "Transparent ZnO : Al Film Prepared by Co-Sputtering of A ZnO : Al and Either Zn or Al Targets" Thin Solid : Films. 290-291. 84-87 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kikuo Tominaga, Takahiro Ao, Ichiro Mori, Kazuya Kusaka and Takao Hanabusa: "Gas Pressure Dependence of AlN Films Prepared in Alternative Magnetron Sputtering" Jpn.J.Appl.Phys.Vol.135. 4972-4975 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Kazuya Kusaka, Takao Hanabusa and Kikuo Tominaga: "Effect of Plasma Protection Net on Residual Stress in AlN Films Deposited by Magnetron Sputtering System" Thin Solid Films. 290-291. 260-263 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Tominaga: "ZnO:In Film Prepared by Sputtering of Facing ZnO:In and Zn Targets" J.Vac.Sci.& Technol.(掲載予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Tominaga: "Film Properties of ZnO:Al Prepared by Co-sputtering of ZnO:Al and Either Zn and Al Target" J.Vac.Sci.& Technol.Vol.A15,No.3. 1074-1079 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Tominaga: "ZnO:Al Films prepared by the Facing Target Sputtering System" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application,New Zealand. 238-243 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Kumano: "Fablication of ZnO Varistor Thin Films by RF Sputtering Technique" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application,New Zealand. 221-225 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Tominaga: "Transparent Conductive ZnO Film Preparation by Alternative Sputtering of ZnO:Al Target and Either Zn or Al Target" Thin Solid Films. (掲載予定). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Tominaga: "Effects of UV Light Irradiation and Excess Zn Addition on ZnO:Al Film Properties in Sputtering Process" Thin Solid Films. 掲載予定 (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Tominaga: "Magnetic Field Dependence of AlN Properties in DC Facing Sputtering" Proc.4th Int.Symp.on Sputtering and Plasma Processes. Kanazawa,ISSP'97. 129-133 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] 日下一也: "交代式スパッタリング法によるAlN膜の残留応力測定" 材料. Vol.46,No.12. 1429-1435 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Kusaka: "Effect of Partial Nitrogen Gas Pressure on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of the Fifth International Conference on Residual Stresses. Linkoping,Sweden. (June 1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Kusaka: "Effect of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Proc.of an International Conference on Advanced Materials Auckland,Development and Performance Evaluation and Application New Zealand. 310-319 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Kusaka: "Effect of External Magnetic Field on Residual Stress in AlN Films Prepared by Sputtering System" Proc.of The Second International Conference on Nitride Semiconductors. Tokushima,Japan. 378 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Kikuo Tominaga: "ITO Films Prepared by Facing Target Sputtering System" Thin Solid Films. 281-282. 194-197 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] Kikuo.Tominaga: "TiN Films Prepared by Unbalanced Planar Magnetron Sputtering under Control of Photoemission of Ti" Thin Solid Films. 281-282. 182-185 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] Kazuya.Kusaka: "Effects of Nitrogen Gas Pressure on Residual Stress in AlN Films Deposited by Planar Magnetron Sputtering System" Thin Solid Films. 281-282. 340-343 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] Kikuo.Tominaga: "ITO Films Prepared on Oriented AlN Films by Facing Target Sputtereing System" Transactions of Material Research Society of Japan. Vol.20. 554-557 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] Kikuo Tominaga: "Transparent ZnO:Al Film Prepared by Co-Sputtering of A ZnO:Al and Either Zn or Al" Thin Solid Films. 290-291. 84-87 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] Kikuo Tominaga: "Gas Pressure Dependence of AlN Films Prepared in Alternative Magnetron Sputtering" Jpn.J.Appl.Phys. Vol.35. 4972-4975 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] Kazuya Kusaka: "Effect of Plasma Protection Net on Residual Stress in AlN Films Deposited by Magnetron Sputtering System" Thin Solid Films. 290-291. 260-263 (1996)

    • Related Report
      1997 Annual Research Report
  • [Publications] 富永喜久雄: "Gas Pressure Dependence of AlN Film Properties in Alternating Sputtering System" Jpn.J.Appl.Phys.35. 4972-4975 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 富永喜久雄: "Transparent ZnO:Al Films Prepared by Cosputtering of ZnO:Al with Either a Zn or an Al Targets" Thin Solid Films. 290-291. 84-87 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] 富永喜久雄: "ITO Films Prepared on C-axis Oriented AlN Films by Facing Target Sputtering System" Trans.of Materials Research Soc.of Japan. 20. 554-557 (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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